Patent classifications
H01L21/67034
APPARATUSES FOR PROCESSING A SUBSTRATE AND METHODS OF PROCESSING A SUBSTRATE
An apparatus for processing a substrate may include an upper chamber, a lower chamber being combined with the upper chamber and separated from the upper chamber, and at least one driving member for moving the lower chamber in an upward direction and a downward direction. The least one driving member may include a supporting element for supporting the lower chamber, a first driving element for moving the lower chamber and the supporting element, a second driving element for moving the lower chamber, the supporting element and the first driving element, the second driving element being disposed adjacent to the first driving element, and a connecting element for connecting the first driving element to the second driving element. A processing space may be provided between the upper chamber and the lower chamber when the lower chamber is combined with the upper chamber.
SUBSTRATE TREATING APPARATUS AND SUBSTRATE TRANSFER ROBOT
The present invention provides a substrate treating apparatus. The substrate treating apparatus includes: a liquid treatment chamber configured to treat a substrate with a liquid; a drying chamber configured to dry the liquid-treated substrate; a transfer robot configured to transfer the substrate between the liquid treatment chamber and the drying chamber, and including a hand which is movable along an X-axis, a Y-axis, and a Z-axis and is rotatably driven based on the Z-axis, and on which the substrate is placed; an optical system configured to photograph a form of a liquid film of the substrate, in which when the substrate is transferred from the liquid treatment chamber to the drying chamber, the substrate is wetted with a chemical liquid and is transferred by the transfer robot in a state of being formed with a liquid film formed; and a controller configured to measure the form of the liquid film photographed by the optical system.
APPARATUS FOR TREATING SUBSTRATE
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an inner space therein; a fluid supply unit having a supply line configured to supply a treating fluid to the inner space and a fluid supply source configured to supply the treating fluid to the supply line; a first exhaust unit configured to exhaust the inner space; a second exhaust unit configured to exhaust the supply line; and a controller configured to control the fluid supply unit, the first exhaust unit, and the second exhaust unit, and wherein the controller controls the fluid supply unit and the second exhaust unit so a pressure of the supply line is maintained at a critical pressure of the treating fluid or above during at least a part of a standby step for keeping a substrate outside the inner space before introducing thereof into the inner space.
Substrate processing apparatus
A substrate processing apparatus processes a surface of a substrate with a processing fluid and includes a support tray in which a concave part for housing the substrate is provided on an upper surface thereof; a storage container in which a cavity is formed, wherein the support tray may be stored in a horizontal posture in the cavity; and a fluid supply part supplying the processing fluid to the cavity, wherein the storage container has a flow path which receives the processing fluid and discharges the processing fluid in a horizontal direction into the cavity from a discharge port that opens on a side wall surface of the cavity and toward the cavity, and a lower end position of the discharge port in a vertical direction is the same as or higher than a position of the upper surface of the support tray stored in the cavity.
Substrate processing method and substrate processing device
A low surface tension liquid supply unit supplies a low surface tension liquid onto the upper surface of a substrate to form a liquid film of the low surface tension liquid on the substrate. An opening is formed in a central region of the liquid film of an organic solvent. The liquid film is removed from the upper surface of the substrate by expanding the opening. While a low surface tension liquid is supplied from the low surface tension liquid supply unit, to the liquid film, toward a liquid landing point set outside the opening, the liquid landing point is moved so as to follow the expansion of the opening. While an facing surface of a drying head faces a dry region set inside the opening to form a low-humidity space between the facing surface and the dry region, with the low-humidity space having a humidity lower than that outside the space, the dry region and the facing surface are moved so as to follow the expansion of the opening.
WAFER DETECTION DEVICE AND WAFER DETECTION METHOD USING THE SAME
A device for detecting whether a wafer is present on a clamping jaw and detecting whether the wafer is parallel to a bottom of the clamping jaw. The device for detecting a wafer comprises: a wafer parallel measuring unit arranged in a CMP cleaning and drying device, and used for emitting a parallel measuring laser beam parallel to the bottom of the clamping jaw and receiving the parallel measuring laser beam; a wafer detection unit used for emitting a wafer detecting laser beam to the wafer and receiving the wafer detecting laser beam; and a detection processing unit electrically connected to the wafer parallel measuring unit and the wafer detection unit, and used for determining whether the wafer is present on the clamping jaw and whether the wafer is parallel to the bottom of the clamping jaw according to the received wafer detecting laser beam and parallel measuring laser beam.
SYSTEMS AND METHODS FOR IN-SITU MARANGONI CLEANING
In an embodiment, a method includes: immersing a wafer in a bath within a cleaning chamber; removing the wafer out of the bath through a solvent and into a gas within the cleaning chamber; determining a parameter value from the gas; and performing remediation within the cleaning chamber in response to determining that the parameter value is beyond a threshold value.
ELECTROSTATIC SUBSTRATE CLEANING SYSTEM AND METHOD
A substrate cleaning system include a chamber and a substrate stage positioned within the chamber. The substrate stage is configured to secure a substrate for cleaning with a cleaning head. The substrate cleaning system includes a robot configured to transfer the substrate between a storage receptable and the substrate stage. The cleaning head includes a disposable electrode ribbon loaded on a roller assembly. The disposable electrode ribbon includes a positive electrode and a negative electrode and is configured to electrostatically clean the substrate by electrostatically removing particles from the substrate. The roller assembly is configured to advance the disposable electrode ribbon following cleaning of the substrate.
Apparatus and method for processing substrate
Disclosed is a method for processing a substrate, comprising a liquid processing step of performing liquid processing on the substrate by supplying a processing liquid onto the substrate in a liquid processing chamber, a transfer step of transferring the substrate from the liquid processing chamber to a drying chamber, and a drying step of drying the substrate in the drying chamber. In the drying step, the substrate is dried while an edge region of the substrate other than a central region of the substrate is supported by a support unit, and in the liquid processing step, the liquid processing is performed on the substrate such that a height of the processing liquid remaining on the edge region of the substrate is greater than a height of the processing liquid remaining on the central region of the substrate when the liquid processing is completed in the liquid processing chamber.
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
A substrate processing method capable of suppressing corrosion of a conductive material on a surface of a substrate by supplying a liquid having a reduced concentration of dissolved oxygen onto the substrate. The substrate processing method includes: dissolving an inert gas in a liquid at not less than a saturation solubility to replace oxygen dissolved in the liquid with the inert gas; generating bubbles of the inert gas in the liquid by depressurizing the liquid in which the inert gas is dissolved; and processing the substrate while supplying the liquid containing the bubbles to the surface of the substrate.