A laser processing machine includes a condenser and a water pillar forming unit. The condenser condenses a laser beam emitted from a laser oscillator and irradiates it to a workpiece held on a chuck table. The water pillar forming unit is disposed on a lower end of the condenser and is configured to form a thread-shaped water pillar on a front side of the workpiece. The laser oscillator includes a first laser oscillator, which emits a first laser beam having a short pulse width, and a second laser oscillator, which emits a second laser beam having a long pulse width. After the laser beams emitted from the first and second laser oscillators have transmitted through the thread-shaped water pillar formed by the water pillar forming unit and have been irradiated to the workpiece, a plasma occurred in the water pillar forming unit applies processing to the workpiece.

Exemplary substrate edge polishing apparatuses may include a chuck body defining a substrate support surface. The apparatuses may include an edge ring seated on the chuck body. The apparatuses may include a retaining wall disposed radially outward of the edge ring. The apparatuses may include a slurry delivery port disposed radially inward of the retaining wall. The apparatuses may include a cylindrical spindle that is positionable over the chuck body. The apparatuses may include an annular polishing pad coupled with a lower end of the cylindrical spindle.

A substrate cleaning system includes a cleaner module to clean a substrate after polishing of the substrate, a drier module to dry the substrate after cleaning by the cleaner module, a substrate support movable along a first axis from a first position in the drier module to a second position outside the drier module, and an in-line metrology station including a line-scan camera positioned to scan the substrate as the substrate is held by the substrate support and the substrate support is between the first position to the second position. The first axis is substantially parallel to a face of the substrate as held in by the substrate support.

Systems and methods are described for supplying a rinsing liquid including ultrapure water and an ammonia gas. The system includes an ultrapure water source and a gas mixture source in fluid communication with a contactor. The gas mixture includes ammonia gas and a carrier gas. The system includes a control unit configured to adjust a flow rate of the ultrapure water source such that an operational pressure of the contactor remains below a pressure threshold. The system includes a compressor configured to remove a residual transfer gas out of the contactor. The contactor generates a rinsing liquid having ultrapure water and a concentration of the ammonia gas dissolved therein. The system includes a pump in fluid communication between the contactor and an outlet. The pump is configured to deliver the rinsing liquid having a gaseous partial pressure below the pressure threshold at the outlet.

A processing apparatus includes a chuck table for holding a workpiece, a processing unit for processing the workpiece held on the chuck table as supplying a processing water to the workpiece, and a water pan fixed to a bottom of the processing apparatus for receiving the processing water as a water leaked.

A method includes: wetting a plurality of top dies disposed on a top wafer in a first wet clean tool located in a wet clean chamber; wetting a plurality of bottom dies disposed on a bottom wafer in a second wet clean tool located in the wet clean chamber, the plurality of bottom dies corresponding to the plurality of top dies, respectively; transferring the top wafer to a wafer-to-wafer bonding tool located in a wafer-to-wafer bonding chamber, without placing the top wafer in a first wafer container; transferring the bottom wafer to the wafer-to-wafer bonding tool, without placing the bottom wafer in a second wafer container; and bonding, by the wafer-to-wafer bonding tool, the top wafer to the bottom wafer.

In a chemical mechanical polishing system, a platen shield cleaning assembly is installed on a rotatable platen in a gap between the rotatable platen and a platen shield. The assembly includes a sponge holder attached to the platen and a sponge. The sponge is held by the sponge holder such that an outer surface of the sponge is pressed against an inner surface of the platen shield.

The dilute chemical solution supply device 1 comprises: a dilute chemical solution preparation unit 2 that prepares a dilute chemical solution W1; a reservoir 3 for the prepared dilute chemical solution; a dilute chemical solution adjustment/supply mechanism 4 that supplies, as washing water W2, the dilute chemical solution W1 stored in the reservoir 3 to a plurality of single-wafer type washers 5A, 5B, and 5C; and a return mechanism that is connected to each of the single-wafer type washers 5A, 5B, and 5C and refluxes excess water from the single-wafer type washers to the reservoir 3. According to such a dilute chemical solution supply device, it is possible to accurately adjust the concentration of the solute of the dilute chemical solution and suppress the discharge of excess water, and the dilute chemical solution supply device is thus suitable for washing of wafers, etc.

According to one aspect of the present disclosure, a vacuum processing apparatus includes: a decompressable process container; a supply port that is formed on a side wall of the process container and that is configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container.

A substrate processing apparatus includes processing units, an exhaust path, a gas processing apparatus and a controller. Each processing unit is configured to process a substrate by using a chemical. A gas exhausted from the processing units flows through the exhaust path. The gas processing apparatus is provided in the exhaust path to remove a target component contained in the gas. The gas processing apparatus includes a duct, a partition plate and a liquid supply. The duct has therein a flow path. The partition plate divides the flow path into spaces, and is formed of a porous material, through which the gas passes, configured to retain a liquid. The liquid supply is configured to supply a dissolving liquid configured to dissolve the target component to the partition plate. The controller adjusts a flow rate of the dissolving liquid according to operation information indicating an operational status of the processing units.