Imaging can be performed well even when an imaging device is disposed at a position facing a peripheral portion of a substrate. A substrate processing apparatus 16 which performs a processing of removing a film on a peripheral portion of a substrate W includes a rotating/holding unit 210 configured to hold and rotate the substrate; a first processing liquid supply unit 250A configured to supply a first processing liquid for removing the film onto the peripheral portion of the substrate while the substrate is being rotated in a first rotational direction R.sub.1 by the rotating/holding unit; and an imaging unit 270 provided at a position in front of an arrival region 902 of the first processing liquid on the substrate with respect to the first rotational direction R.sub.1, and configured to image the peripheral portion of the substrate.

According to one embodiment, a substrate processing apparatus includes a tank that stores a treatment liquid; a liquid level pipe connected to the tank such that the treatment liquid stored in the tank flows therein, and configured such that the liquid level of the treatment liquid therein moves according to increase and decrease of the treatment liquid in the tank; a liquid level sensor that detects the liquid level in the liquid level pipe; an air supply pipe for supplying a gas to a piping space above the liquid level in the liquid level pipe; and a controller that determines whether there is erroneous detection of the liquid level sensor based on a detection result obtained by the liquid level sensor in response to the movement of the liquid level in the liquid level pipe caused by supply of the gas to the piping space from the air supply pipe.

A substrate processing apparatus includes a driving magnet that is disposed correspondingly to a movable pin and that has a predetermined polar direction with respect to a radial direction of a rotary table, a pressing magnet that has a magnetic pole that gives an attractive magnetic force or a repulsive magnetic force between the driving magnet and the pressing magnet and that presses a support portion against a peripheral edge of a substrate by urging the support portion toward a contact position by means of the attractive magnetic force or the repulsive magnetic force, and a pressing-force changing unit that changes a magnitude of a pressing force against the peripheral edge of the substrate pressed by the support portion while keeping the magnitude higher than zero in response to rotation of the rotary table.

A substrate processing method includes forming a liquid film of an alkaline processing liquid on a substrate by supplying the alkaline processing liquid having a reduced oxygen concentration onto the substrate; and etching the substrate by rotating the substrate while supplying the alkaline processing liquid in a state that the liquid film having a given thickness is formed on the substrate.

A cleaning liquid supply device for supplying a cleaning device with cleaning liquid includes a chemical liquid inlet portion and a dilution water inlet portion, a first chemical liquid control unit fluidically connected to the chemical liquid inlet portion and the dilution water inlet portion, and a second chemical liquid control unit fluidically connected to the chemical liquid inlet portion and the dilution water inlet portion. The first chemical liquid control unit includes a first chemical-liquid-flow-rate control unit, a first dilution-water-flow-rate control unit, and a first mixing portion. The second chemical liquid control unit includes a second chemical-liquid-flow-rate control unit, a second dilution-water-flow-rate control unit, and a second mixing portion.

A movable wafer probe may include: an immersion hood including a top body portion and a bottom foot portion, the top body portion having first inner sidewalls surrounding a top opening, the bottom foot portion having second inner sidewalls surrounding a bottom opening; a transducer disposed above the bottom opening and within the top opening, the transducer spaced apart from the first inner sidewalls of the top body portion by a first spacing, the first spacing forming a fluid exhaust port; and a fluid input port extending through the transducer, a bottom end of the fluid input port opening to the bottom opening.

In a chemical mechanical polishing system, a platen shield cleaning assembly is installed on a rotatable platen in a gap between the rotatable platen and a platen shield. The assembly includes a sponge holder attached to the platen and a sponge. The sponge is held by the sponge holder such that an outer surface of the sponge is pressed against an inner surface of the platen shield.

A washing water supply arrangement (50) comprises an ultra-pure water production unit (54), a supply pipe (52), an operation control (53) and an ultra-pure water impellent arrangement (55). A first end of the supply pipe (52) is connected to an output from the ultra-pure water production unit (54). A second end of the supply pipe is adapted for being connected to a semiconductor washing apparatus. The operation control (53) is configured for controlling the ultra-pure water production unit (54) to produce a pre-determined amount of ultra-pure water upon demand. The ultra-pure water impellent arrangement (55) has access to a source of an inert gas and is configured for rinsing the supply pipe (52) from water with the inert gas after delivery of the pre-determined amount of ultra-pure water. A semiconductor washing system, a semiconductor production system and a method for supplying washing water are also disclosed.

A cleaning liquid supply device for supplying a cleaning device with cleaning liquid includes a chemical liquid inlet portion and a dilution water inlet portion, a first chemical liquid control unit fluidically connected to the chemical liquid inlet portion and the dilution water inlet portion, and a second chemical liquid control unit fluidically connected to the chemical liquid inlet portion and the dilution water inlet portion. The first chemical liquid control unit includes a first chemical-liquid-flow-rate control unit, a first dilution-water-flow-rate control unit, and a first mixing portion. The second chemical liquid control unit includes a second chemical-liquid-flow-rate control unit, a second dilution-water-flow-rate control unit, and a second mixing portion.

Methods and apparatus for cleaning an electrostatic chuck (ESC) in a semiconductor chamber allow in-situ cleaning of the ESC. An apparatus may include an adapter or cover ring that is electrically isolated from a deposition ring; an annular grounding bracket mounted to and surrounding a pedestal, the annular grounding bracket has at least one horizontal grounding loop on an upper perimeter surface configured to provide electrical contact with the adapter or cover ring and to provide an RF return path to the ESC during plasma generation; and a bracket with a horizontal grounding loop on a first end to make electrical contact with the deposition ring and a vertical grounding loop on a second end to make electrical contact with a lift hoop which is electrically grounded, the bracket is mounted to, but electrically isolated from, the annular grounding bracket.