A substrate cleaning apparatus includes a support inside a chamber to hold a substrate, a first supply source inside the chamber that includes a first nozzle along a first direction and facing an upper surface of the support, the first nozzle to spray polymer and solvent onto the substrate to form a coating, and a second nozzle at an oblique angle to the first direction and facing an edge of the support to inject a hot gas toward the coating to volatilize the solvent, a second supply source inside the chamber and having a third nozzle facing the upper surface of the support to inject a peeling treatment to the coating to peel the coating from the substrate, and a third supply source inside the chamber and facing a lower surface of the support to inject the hot gas to heat a second surface of the substrate.

A substrate processing method includes forming a liquid film of an alkaline processing liquid on a substrate by supplying the alkaline processing liquid having a reduced oxygen concentration onto the substrate; and etching the substrate by rotating the substrate while supplying the alkaline processing liquid in a state that the liquid film having a given thickness is formed on the substrate.

In a substrate processing method, a substrate with a pattern including a plurality of structures is processed. The substrate processing method includes a step of increasing hydrophilicity of respective surfaces of the structures, by executing predetermined processing on the structures with a non-liquid substance, from that before execution of the predetermined processing; and a step of supplying a processing liquid to the structures after the step of increasing hydrophilicity.

Embodiments of wet processing systems and methods for uniform wet processing are disclosed. A method described in the present disclosure includes measuring one or more wafer characteristics of a wafer using a plurality of detectors and determining a wafer profile of the wafer based on the measured one or more wafer characteristics. The method also includes setting first and second sets of wet processing parameters of a wet processing system for respective first and second wafer regions based on the wafer profile, where a value of at least one wet processing parameter is different between the first and second sets of wet processing parameters. The method further includes performing wet processing on the wafer by dispensing one or more chemicals onto the first and second wafer regions according to the respective first and second sets of wet processing parameters.

Disclosed is a substrate treating apparatus for performing treatment with supply of fluids to a substrate. The apparatus includes a first treatment housing, a treating section provided inside of the first treatment housing and configured to treat a substrate placed on a mount table with the fluids, a first fluid supplying section located on a first lateral side of the treating section, seen from a front side face where maintenance is performed to the first treatment housing, and configured to supply a first fluid of the fluids to the treating section, and a second fluid supplying section located on a second lateral side of the treating section, seen from the front side face, and configured to supply a second fluid of the fluids to the treating section.

Provided is a method, device, and program for determining a timing of removing a substrate from a cassette in substrate processing device, and substrate processing device. In the method, a tentative removal time point of each substrate is calculated by adding a transfer time to a tentative removal time point of the one previous substrate, wherein the transfer time is required from the start of an action of removing a substrate from the cassette to the end of an action of delivering the substrate to an exchanger.

A wafer cleaning apparatus according to the present disclosure includes a rotary table that supports and rotates a wafer so that the wafer rotates about a rotational axis, and an ultrasonic vibration device that vibrates a liquid film so that vibration having an ultrasonic frequency is generated in the liquid film formed on an upper surface of the wafer.

An in-line wet bench device for the wet-chemical treatment of semiconductor wafers, comprising a plurality of conveying rollers, each of which is rotatable about an axis of rotation, for the in-line transport of semiconductor wafers along a conveying direction, wherein the axes of rotation are arranged parallel to one another and perpendicular to the conveying direction, the conveying rollers having a cylindrical conveying section which extends axially along the respective axis of rotation and forms a conveying surface in the shape of a cylindrical sleeve. The conveying surface has at least one smooth region with surface roughnesses of less than 10 μm when viewed in the axial direction and rough regions with surface roughnesses of more than 100 μm axially adjacent to the smooth region.

According to one embodiment, provided is a substrate cleaning device including a nozzle that includes: a first supply port; a second supply port; a third supply port; a first discharge port; and a third discharge port, wherein the substrate cleaning device is configured to clean a substrate with jets of the second mixed fluid of the gas, the treatment liquid and the surface tension reducing gas.

An electronic apparatus includes: an electronic module; a display panel disposed on the electronic module and including a first display region and a second display region adjacent to the first display region, the second display region overlapping the electronic module; and a polarization plate disposed on the display panel and including a first polarization region overlapping the first display region and a second polarization region including a polarization part and a non-polarization part having higher light transmittance than the polarization part, the non-polarization part overlapping the second display region.