Patent classifications
H01L21/6704
Substrate treatment method and substrate treatment apparatus
A substrate treatment method is provided, which includes: an organic solvent replacing step of supplying an organic solvent, whereby a liquid film of the organic solvent is formed on the substrate as covering the upper surface of the substrate to replace a rinse liquid with the organic solvent; a substrate temperature increasing step of allowing the temperature of the upper surface of the substrate to reach a first temperature level higher than the boiling point of the organic solvent after the formation of the organic solvent liquid film, whereby a vapor film of the organic solvent is formed below the entire organic solvent liquid film between the organic solvent liquid film and the substrate to levitate the organic solvent liquid film above the organic solvent vapor film; and an organic solvent removing step of removing the levitated organic solvent liquid film from above the upper surface of the substrate.
COMPUTER-READABLE RECORDING MEDIUM, SUBSTRATE BONDING SYSTEM, AND SUBSTRATE BONDING METHOD
A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution on a computer, cause a processing to be performed is provided. The processing includes acquiring displacement data of multiple points on a surface of a substrate held by a chuck; specifying a distribution of displacements of the surface based on the acquired displacement data; and determining a type of a foreign matter based on the specified distribution.
Platen shield cleaning system
In a chemical mechanical polishing system, a platen shield cleaning assembly is installed on a rotatable platen in a gap between the rotatable platen and a platen shield. The assembly includes a sponge holder attached to the platen and a sponge. The sponge is held by the sponge holder such that an outer surface of the sponge is pressed against an inner surface of the platen shield.
Substrate processing apparatus
The disclosure provides a substrate processing apparatus that processes a surface of a substrate with a processing fluid in a supercritical state, in which the substrate is protected from the pressure fluctuation caused by partial vaporization of the processing fluid in the flow path. A substrate processing apparatus which processes a surface of a substrate with a processing fluid in a supercritical state includes a chamber housing provided therein with a processing space capable of housing the substrate and a flow path which receives the processing fluid from outside and guides the processing fluid to the processing space, and a fluid supply part which pressure-feeds the processing fluid to the flow path, wherein a plurality of bent parts which change a flow direction of the processing fluid are provided in the flow path.
Method and apparatus for removing particles from the surface of a semiconductor wafer
A method for removing particles from a semiconductor wafer surface is disclosed. A wafer is being spun on a spin coater contained within a condensing environment. Liquid vapor is then infused into the condensing environment to allow some of the liquid vapor to be condensed onto a surface of the wafer on which particles may adhere while the wafer is being spun. Next, a set of light pulses is applied to the surface of the spinning wafer. Finally, an electric grid is utilized to remove the particles off the surface of the wafer.
Method and apparatus for removing particles from the surface of a semiconductor wafer
A method for removing particles from a semiconductor wafer surface is disclosed. A liquid is placed on a surface of a semiconductor wafer on which particles may adhere. A light pulse is then applied to the surface of the semiconductor wafer through the liquid. The liquid containing the particles is then removed from the surface of the semiconductor wafer.
Wafer cleaning method and apparatus therefore
The present invention relates to a method for treating the surface of a wafer with multiple liquids, comprising rotating the surface of the wafer and discharging different liquid streams onto the rotating surface in a sequence from separate outlets, wherein the discharge of liquid streams which are contiguous in the sequence overlaps during a transition phase, and wherein during the transition phase the liquid streams merge after exiting said outlets to form a merged liquid stream before impacting the rotating surface. The invention also provides a liquid dispensing device incorporating a housing holding two or more liquid delivery tubes, wherein the tubes' outlets are inwardly angled towards one another, such that in use liquid streams delivered from the outlets of the two or more liquid delivery tubes merge to form a merged liquid stream.
SUBSTRATE PROCESSING APPARATUS AND PROCESSING METHOD
A polishing apparatus is provided. The polishing apparatus includes: a polishing unit configured to polish a substrate by bringing a polishing tool into contact with the substrate and moving the substrate relatively to the polishing tool; a cleaning unit; and a first transfer robot configured to transfer the substrate before polishing to the polishing unit and/or configured to transfer the substrate after polishing from the polishing unit to the cleaning unit. The cleaning unit includes: at least one cleaning module, a buff processing module configured to perform a buff process to the substrate, and a second transfer robot configured to transfer the substrate between the cleaning module and the buff processing module, the second transfer robot being different from the first robot.
APPARATUS FOR PROCESSING SUBSTRATE AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME
Provided is an apparatus for processing a substrate, the apparatus including: a processing chamber configured to provide a processing space; a fluid supply device configured to supply a supercritical fluid to the processing chamber; a fluid discharge device configured to discharge the supercritical fluid from the processing chamber; and a control device configured to control operations of the fluid supply device and the fluid discharge device, wherein the fluid supply device includes a first supply line connected to an upper portion of the processing chamber and a second supply line connected to a lower portion of the processing chamber, and the control device is configured to perform a plurality of first cycles in which the supercritical fluid is alternately supplied into the processing space through the first supply line and the second supply line to boost pressure in the processing space to a set pressure.
Transfer unit, and apparatus and method for treating substrate
Disclosed are an apparatus and a method for liquid-treating a substrate. An apparatus for treating a substrate includes a liquid treatment chamber that supplies a liquid onto the substrate to liquid-treat the substrate, a drying chamber that removes the remained liquid on the substrate, and a transfer unit that transfers the substrate between the liquid treatment chamber and the drying chamber, wherein the transfer unit includes a hand that supports the substrate, and a weight measuring unit that measures a weight of the remained liquid on the substrate. A weight of a remained liquid on a substrate may be measured by measuring a weight of the substrate while the substrate is transferred.