A dry etching method according to an embodiment of the present disclosure includes reacting an etching target film formed on a surface of a workpiece with a β-diketone and nitrogen dioxide to etch the etching target film in a non-plasma state, the etching target film containing a metal having an M-O bond energy of 5 eV or higher or an oxide of the metal.

There is provided a technique that includes: (a) supplying a first gas containing a group XIV element to a substrate on which a film containing the group XIV element is formed such that reaction by-products generated by reaction with the group XIV element contained in the film formed on the substrate are saturated and adsorbed on the substrate; (b) supplying a second gas containing a halogen after (a); and (c) etching the film containing the group XIV element formed on the substrate by alternately repeating (a) and (b).

The present disclosure relates to an apparatus for trapping a reaction by-product created by an etching process, the apparatus being configured to trap a reaction by-product contained in an unreacted gas discharged after a process is performed in an etching process chamber during a semiconductor manufacturing process, trap and stack the reaction by-product in the form of powder at a position between a vacuum pump and a scrubber through multiple flow path switching structures, multiple trapping structures, and multiple stacking structures, and discharge only a gaseous unreacted gas to the scrubber.

In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

A substrate support includes an electrostatic chuck formed of ceramics and holding a substrate by electrostatic attraction, a base supporting the electrostatic chuck, and a flow path through which a heat exchange medium flows. An upper surface of the flow path is formed of ceramics.

The present disclosure describes a method for controlling radiation conditions and an example system for performing the method. The method includes sending a first setting to configure a radiation device to provide radiation to a substrate undergoing a process operation in a process chamber of the radiation device. The method further includes receiving radiation energy data measured at a plurality of locations of the process chamber and receiving measurement data measured on the substrate during the process operation. The method further includes in response to a variance of the radiation energy data being above a first predetermined threshold and in response to a difference between reference data and the measurement data being above a second predetermined threshold, sending a second setting to configure the radiation device to provide radiation to the substrate.

Proposed are a part having a corrosion-resistant layer that minimizes peeling off and particle generation of a porous ceramic layer, a manufacturing process apparatus having the same, and a method of manufacturing the part.

A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer.

A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

Provided is a mounting stage on which a substrate to be subjected to a plasma process is mounted. The mounting stage includes: an electrostatic chuck configured to attract the substrate and an edge ring disposed around the substrate; and supply holes through which a heat medium is supplied to a space between the electrostatic chuck and the edge ring. A groove is provided in at least one of the edge ring and the mounting stage, and the groove is not in communication with the supply holes.