A tool and method for processing substrates by encapsulating a mask to protect from degradation during an etch-back to prevent a feature liner material from pinching off an opening during deposition-etch cycles used to fabricate high aspect ratio features with very tight critical dimension control.

Provided is a technique including: a processing chamber that processes a substrate; a first gas supplier that supplies a metal-containing gas into the processing chamber; a second gas supplier that supplies a first oxygen-containing gas into the processing chamber; and an exhauster including a gas exhaust pipe and a trap that collects a component of the metal-containing gas contained in an exhaust gas using plasma, the exhauster discharging the exhaust gas from the processing chamber.

Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a chamber having an inner space, a support unit configured to support the substrate in the inner space, a gas supply tube configured to supply a gas onto the substrate supported on the support unit, a gas exhaust tube configured to exhaust the gas from the inner space, and a gas block connected to the gas supply tube and the gas exhaust tube and provided above the chamber.

In an embodiment, a pattern transfer processing chamber includes a pattern transfer processing chamber and a loading area external to the pattern transfer processing chamber. The loading area is configured to transfer a wafer to or from the pattern transfer processing chamber. The loading area comprises a first region including a loadport, a second region including a load-lock between the first region and the pattern transfer processing chamber, and an embedded baking chamber configured to heat a patterned photoresist on the wafer.

Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.

A power supply control system includes a power generator for providing a signal to a load. The power generator includes a power controller controlling a power amplifier. The power generator includes an adaptive controller for varying the output signal controlling the power amplifier. The adaptive controller compares an error between a measured output and a predicted output to determine adaptive values applied to the power controller. The power generator also includes a sensor that generates an output signal that is digitized and processed. The sensor signal is mixed with a constant K. The constant K is varied to vary the processing of the sensor output signal. The value K may be commutated based on the phase, frequency, or both phase and frequency, and the bandwidth of K is determined by coupled power in the sensor output signal.

A maintenance device has a cover and a fixing member. The cover is in a vacuum atmosphere during substrate processing, is formed to have a size corresponding to a boundary line between a first part and a second part of a processing container, which can be separated into the first part and the second part, or an opening surface separating the first part and the second part, and has airtightness, and visual transparency at least in a part. The fixing member fixes in an airtight manner the cover along the boundary line between the first part and the second part of the processing container or to the opening surface separating the first part and the second part.

An etching method includes: accommodating a substrate having a recess formed by a sidewall, which is a germanium-containing film, into a processing container; etching the sidewall by supplying an etching gas including a first fluorine-containing gas and a second fluorine-containing gas into the processing container; and controlling a shape of the sidewall after etching by, in the etching the sidewall, adjusting a partial pressure of the first fluorine-containing gas in the processing container, or a ratio of a flow rate of the second fluorine-containing gas to a flow rate of the first fluorine-containing gas supplied into the processing container.

Methods and systems for detection of an endpoint of a substrate process are provided. A set of machine learning models are trained to provide a metrology measurement value associated with a particular type of metrology measurement for a substrate based on spectral data collected for the substrate. A respective machine learning model is selected to be applied to future spectral data collected during a future substrate process for a future substrate in view of a performance rating associated with the particular type of metrology measurement. Current spectral data is collected during a current process for a current substrate and provided as input to the respective machine learning model. An indication of a respective metrology measurement value corresponding to the current substrate is extracted from one or more outputs of the trained machine learning model. In response to a determination that the respective metrology measurement satisfies a metrology measurement criterion, an instruction including a command to terminate the current process is generated.

A member for a plasma processing device of the present disclosure is a member for a plasma processing device made of ceramics and having a shape of a cylindrical body with a through hole in an axial direction. The ceramics is mainly composed of aluminum oxide, and has a plurality of crystal grains and a grain boundary phase that is present between the crystal grains. An inner peripheral surface of the cylindrical body has an arithmetic average roughness Ra of 1 μm or more and 3 μm or less, and an arithmetic height Rmax of 30 μm or more and 130 μm or less.