A processing condition specifying method that includes Steps S31, S32, and S33. In Step S31, a prediction thickness information piece containing prediction values of thicknesses after processing on the substrate W is calculated for each of a plurality of recipe information pieces based on measurement thickness information containing measurement values of thicknesses of the substrate W. In Step S32, the prediction thickness information pieces each calculated for a corresponding one of the recipe information pieces are evaluated according to a prescribed evaluation method and a prediction thickness information piece is selected from among the prediction thickness information pieces. In Step S33, a recipe information piece corresponding to the selected prediction thickness information piece is specified. The measurement values contained in the measurement thickness information indicate a thickness of the substrate W measured before processing on the substrate W.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit horizontally maintaining a substrate; a laser irradiation unit for irradiating the substrate with a laser; a photo-detector for detecting an energy of a reflective light reflected from the substrate among a laser irradiated on the substrate; and a processor, and wherein the processor irradiates a first laser of a first output to the substrate, and sets a second output of a second laser for irradiating the substrate to heat the substrate, based on an energy of a first reflective light reflected from the substrate by the first laser detected from the photo-detector.

A method of detecting a polishing endpoint includes storing a plurality of library spectra, measuring a sequence of spectra from the substrate in-situ during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching library spectrum from the plurality of library spectra to generate a sequence of best matching library spectra. Each library spectrum has a stored associated value representing a degree of progress through a polishing process, and the stored associated value for the best matching library spectrum is determined for each best matching library spectrum to generate a sequence of values representing a progression of polishing of the substrate. The sequence of values is compared to a target value, and a polishing endpoint is triggered when the sequence of values reaches the target value.

A method for forming a semiconductor structure includes: providing a substrate including a first region and a second region; forming a first initial gate dielectric layer in the first region and forming a second initial gate dielectric layer in the second region; injecting doped elements into the first initial gate dielectric layer and the second initial gate dielectric layer; and thinning the first initial gate dielectric layer and the second initial gate dielectric layer, to form a first gate dielectric layer and a second gate dielectric layer, where a thickness of the first gate dielectric layer is greater than a thickness of the second gate dielectric layer. A negative-bias temperature instability (NBTI) effect is improved for a first transistor and a second transistor.

The present invention relates to an etching apparatus including an etching chamber in which a target object is etched by an etchant, an etchant supply part which collects the etchant in the etching chamber and supplies the etchant to the etching chamber using an etchant pump, a first pressure adjusting unit which injects a gas into the etchant pump to apply an operation pressure, a second pressure adjusting unit which pressurizes the etching chamber and the etchant supply part at the same predetermined pressure, a back pressure adjusting unit which adjusts a pressure of the gas discharged when the etchant pump operates, and a valve which controls an order and a direction in which the gas is injected into or discharged from the etchant pump.

A semiconductor wafer dicing process is disclosed for dicing a wafer into individual dies. Scribe lines are formed within a polymer coating to expose regions of wafer to form a pre-processed product. The pre-processed product within the chamber is plasma etched to remove the exposed regions of the wafer to separate the individual dies and form a processed product. A frame cover is then removed and the processed product, wafer frame and adhesive tape are exposed to an oxygen plasma within the chamber to partially remove an outermost region of the polymer coating, which is most heavily contaminated with fluorine, to leave a residual polymer coating on the individual dies and form a post-processed product. The residual polymer coating on the individual dies of the post-processed product is then removed.

A chemical mechanical planarization system includes a chemical mechanical planarization pad that rotates during a chemical mechanical planarization process. A chemical mechanical planarization head places a semiconductor wafer in contact with the chemical mechanical planarization pad during the process. A slurry supply system supplies a slurry onto the pad during the process. A pad conditioner conditions the pad during the process. An impurity removal system removes debris and impurities from the slurry.

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a curved barrier positioned after the dispenser to spread fresh polishing liquid from the dispenser.

A substrate processing method includes forming an adsorption layer on a substrate by supplying a silicon-containing gas to the substrate; performing a modification by generating plasma containing He; and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer, wherein the forming the adsorption layer, the performing the modification, and the generating the plasma are repeated to form a silicon-containing film.

A substrate processing apparatus includes a first process chamber in which a target substrate is processed, a first tank connected to the first process chamber to supply a first chemical to the first process chamber, a second process chamber in which the target substrate is processed, and a second tank connected to the second process chamber to supply a second chemical to the second process chamber. A metal ion contained in the first chemical supplied to the first process chamber has an ion concentration greater than an ion concentration of the metal ion contained in the second chemical supplied to the second process chamber.