An apparatus for treating a substrate of the present invention includes a buffer unit, an inversion unit, a first transfer chamber, a second transfer chamber, a first cleaning chamber, and a second cleaning chamber. The first transfer chamber, the inversion unit, and the second transfer chamber are sequentially arranged in one direction. The first cleaning chamber is disposed at one side of the first transfer chamber, and the second cleaning chamber is disposed at one side of the second transfer chamber. A first main transfer robot provided in the first transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the first cleaning chamber. The second main transfer robot provided in the second transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the second cleaning chamber.

In a vacuum processing apparatus, a load lock module includes a housing and substrate holding sections, the housing having first substrate transfer ports formed on one of right and left sides thereof and a second substrate transfer port formed on a rear side thereof, and each substrate holding section being configured to hold a substrate on a right or left side in the housing. Further, a normal pressure transfer chamber extends over or under the housing from one of the right and left sides of the housing to the other one thereof so that each first substrate transfer port is opened. The normal pressure transfer chamber includes a stacked transfer region that is a region overlapping the housing. Further, a normal pressure transfer mechanism transfers the substrate between each substrate holding section and a transfer container carried into each of loading/unloading ports via the stacked transfer region.

A nozzle head, apparatus and method for providing a coating on a surface of a substrate by subjecting the surface of the substrate to successive surface reactions of at least two precursors according to principles of atomic layer deposition. The nozzle head comprises an output face provided with at least two different precursor zones, the at least two different precursor zones being arranged to provide different coating layers on the surface of the substrate.

A substrate processing apparatus is configured to dry a substrate by replacing a liquid film formed on a top surface of the substrate, which is horizontally held, with a supercritical fluid. The substrate processing apparatus includes a pressure vessel, a cover body and a supporting body. The pressure vessel has therein a drying chamber for the substrate. The cover body is configured to close an opening of the drying chamber. The supporting body is configured to support the substrate horizontally within the drying chamber. The supporting body is fixed to the drying chamber.

According to the present disclosure, both first and second cup bodies are brought into a state of being close to each other by lifting one of the first and second cup bodies. A first gap between a gap forming portion formed on the lower surface of a first protruding portion and the upper surface of a second protruding portion is narrower than a second gap between a portion of the first protruding portion where the gap forming portion is absent, and the upper surface of the second protruding portion. In this state, a cleaning liquid is supplied to the second gap. Since movement of the cleaning liquid that tends to flow radially outward is restricted by the first narrow gap, the entire area between the first and second protruding portions may be filled with the cleaning liquid so that the surface to be cleaned may be evenly cleaned.

An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.

Disclosed is a manufacturing apparatus of a light-emitting element. The manufacturing apparatus includes: a main transporting route including a first transfer device and a second transfer device connected to each other through a first transporting chamber; a sub-transporting route extending in a direction intersecting the main transporting route, the sub-transporting route including: a second transporting chamber connected to the first transfer device or the second transfer device; and a delivery chamber connected to the second transporting chamber; and a plurality of treatment chambers connected to the delivery chamber. A region to which the first transfer device, the second transfer device, the first transporting chamber, and the second transporting chamber are connected is under a continuous vacuum environment.

A system for performing a chemical mechanical polishing (CMP) process is provided. The system includes a CMP tool configured to polish a semiconductor wafer. The processing system further includes a wafer stage configured to support the semiconductor wafer for facilitating the insertion of the semiconductor wafer into, and its subsequent removal from, the CMP tool. The processing system also includes a number of spray nozzles positioned relative to the wafer stage. In addition, the processing system includes a spray generator connected to the spray nozzles and configured to convert a mixture to a mist spray. The processing system further includes a controller configured to activate flow of the mist spray from the spray generator to the spray nozzles to discharge the mist spray over the semiconductor wafer supported by the wafer stage.

A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

Disclosed are a liquid treating apparatus and a liquid treating method. The liquid treating apparatus includes a chamber that provides a space for processing a substrate, a support unit that is provided in the chamber to support the substrate, an ejection unit that has a nozzle for supplying a cleaning medium to the substrate supported by the support unit, and an auxiliary ejection unit that has an auxiliary nozzle for supplying a contamination prevention liquid to the substrate supported by the support unit.