An in-line manufacturing apparatus includes a carrier that transports a substrate, a plurality of process chambers subjected to a manufacturing process on the substrate transported through the carrier, and a cooling part disposed adjacent to the carrier and movable with the carrier.

A substrate treatment device according to an embodiment includes: a liquid treatment part configured to supply a liquid onto a substrate to form a liquid film remaining in a liquid state on the substrate; an imaging part configured to capture an image of a front surface of the substrate, on which the liquid film remaining in the liquid state is formed; a determination part configured to determine a quality of a formation state of the liquid film based on the captured image of the substrate; and a post-treatment part configured to treat the substrate on which the liquid film is formed, when the determination part determines that the formation state of the liquid film is good.

Disclosed are a continuous heat treatment device and method for a sintered Nd—Fe—B magnet workpiece. The device comprises a first heat treatment chamber, a first cooling chamber, a second heat treatment chamber, and a second cooling chamber continuously disposed in sequence, as well as a transfer system disposed among the chambers to transfer the alloy workpiece or the metal workpiece; both the first cooling chamber and the second cooling chamber adopt a air cooling system, wherein a cooling air temperature of the first cooling chamber is 25° C. or above and differs from a heat treatment temperature of the first heat treatment chamber by at least 450° C.; a cooling air temperature of the second cooling chamber is 25° C. or above and differs from a heat treatment temperature of the second heat treatment chamber by at least 300° C. The continuous heat treatment device and method can improve the cooling rate and production efficiency and improve the properties and consistency of the products.

A substrate processing apparatus includes a first process chamber in which a target substrate is processed, a first tank connected to the first process chamber to supply a first chemical to the first process chamber, a second process chamber in which the target substrate is processed, and a second tank connected to the second process chamber to supply a second chemical to the second process chamber. A metal ion contained in the first chemical supplied to the first process chamber has an ion concentration greater than an ion concentration of the metal ion contained in the second chemical supplied to the second process chamber.

A substrate processing apparatus includes: a loading/unloading block; a processing station provided on one of left and right sides of the loading/unloading block; a relay block provided on one of left and right sides of the processing station; processing blocks provided side by side in a left-right direction to form the processing station, each of the processing blocks including a processing module configured to perform a process on the substrate and a main transfer mechanism configured to deliver the substrate to the processing module; and bypass transfer mechanisms provided separately from the main transfer mechanism and provided respectively for the processing blocks arranged side by side in the left-right direction to transfer the substrate between left and right blocks, wherein bypass transfer paths for the substrate transferred by the plurality of bypass transfer mechanisms have heights different from each other, and partially overlap each other in a plan view.

An apparatus includes: a substrate holder including a base member and configured to hold a substrate so as to be spaced apart upward from the base member; a rotary driver configured to rotationally drive the substrate holder; a processing liquid nozzle configured to supply a processing liquid to the substrate; a liquid receiving cup configured to receive the processing liquid scattered from the substrate; a cup exhaust passage configured to suction an atmosphere in the liquid receiving cup; a purge gas nozzle configured to discharge a purge gas into a space formed between the substrate and the base member; a purge gas flow rate controller configured to control a flow rate of the purge gas discharged from the purge gas nozzle; and a controller configured to control at least an operation of the purge gas flow rate controller.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an inner space therein; a fluid supply unit having a supply line configured to supply a treating fluid to the inner space and a fluid supply source configured to supply the treating fluid to the supply line; a first exhaust unit configured to exhaust the inner space; a second exhaust unit configured to exhaust the supply line; and a controller configured to control the fluid supply unit, the first exhaust unit, and the second exhaust unit, and wherein the controller controls the fluid supply unit and the second exhaust unit so a pressure of the supply line is maintained at a critical pressure of the treating fluid or above during at least a part of a standby step for keeping a substrate outside the inner space before introducing thereof into the inner space.

A substrate processing apparatus for processing a substrate to be measured by a film thickness measurement device, includes: a heat treatment part configured to heat-treat a substrate coated with a coating film; and a fluid supply part configured to supply a fluid, which suppresses variations in a film thickness over time until the film thickness is measured by the film thickness measurement device, to the substrate during or after the heat-treatment by the heat treatment part.

A substrate treating method for treating substrates with a substrate treating apparatus having an indexer section, a treating section and an interface section includes performing resist film forming treatment in parallel on a plurality of stories provided in the treating section and performing developing treatment in parallel on a plurality of stories provided in the treating section.

A substrate processing system installed on a floor face is provided. The substrate processing system includes a substrate transfer module, a supporting table including a top plate disposed separately from the floor face, a plurality of substrate processing modules disposed on the top plate and coupled to the substrate transfer module along a lateral side of the substrate transfer module, and a plurality of power units disposed below the top plate. Further, the plurality of power units correspond to the plurality of substrate processing modules, respectively, and each of the power units is configured to supply electric power to the corresponding processing module.