A substrate processing apparatus includes a temperature detector and a controller. The temperature detector detects a temperature of processing liquid before the temperature of the processing liquid in pre-dispensing in progress reaches a target temperature. The controller sets discharge stop duration of the processing liquid in the pre-dispensing based on target temperature prediction duration. The target temperature prediction duration is prediction duration until the temperature of the processing liquid reaches the target temperature from a detection temperature. The detection temperature is the temperature of the processing liquid detected by the temperature detector before the temperature of the processing liquid reaches the target temperature. The target temperature prediction duration is determined based on a temperature profile. The temperature profile indicates a record of the temperature of the processing liquid changing over time when the pre-dispensing processing was performed in the past according to the pre-dispensing condition.

A developing treatment apparatus for performing a developing treatment on a treatment object substrate. The developing treatment apparatus includes: a rotating and holding part that holds and rotates the treatment object substrate; a discharger that discharges a predetermined solution relating to the developing treatment to the treatment object substrate held on the rotating and holding part; and a destaticizer that supplies ions ionized by an X-ray to the predetermined solution discharged to the treatment object substrate held on the rotating and holding part, to destaticize the predetermined solution.

A substrate treatment method for treating a substrate, includes the steps of: (A) heating the substrate having a coating film formed on a surface thereof by supply of a coating solution; (B), after the (A) step, moving a discharge destination of a removing solution from a peripheral position on the surface of the substrate toward a center side of the substrate and turning it back at a first position to return it again to the peripheral position while rotating the substrate; (C), after the (B) step, moving the discharge destination of the removing solution from the peripheral position on the surface of the substrate toward center side of the substrate and turning it back at a second position closer to an outside than the first position to return it again to the peripheral position while rotating the substrate; and (D), after the (C) step, heating again the substrate.

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a metal deposition chamber coupled with the transfer chamber.

A tray elevator of a test handler includes a tray mounter on which a test tray is seated and having a support part and a through hole vertically penetrating the support part, a shaft vertically extending through the through hole of the tray mounter and configured to provide a path for elevating or lowering the tray mounter, a guide bushing including an outer surface and a groove at the outer surface, inserted into the through hole of the tray mounter, and configured to move along the shaft, and a ring inserted into the groove of the guide bushing.

A semiconductor substrate processing apparatus includes a substrate transfer module including a chamber having an internal space extending in a first direction within the chamber, at least one pair of first load ports at opposite sides of the chamber, to face in a second direction intersecting the first direction, and configured to rotate and move a substrate carrier, a load lock at a rear surface of the chamber, and a robot arm configured to move in the first direction in the internal space of the chamber, a transfer chamber connected to the load lock of the substrate transfer module, a plurality of processing chambers connected to the transfer chamber, and a transfer arm inside the transfer chamber, and configured to unload the semiconductor substrate from the load lock and to load the semiconductor substrate into at least one of the plurality of processing chambers.

A heat treatment device includes: a heating plate configured to support and heat a substrate on which a resist film is formed; a chamber configured to cover a processing space above the heating plate; a gas supply configured to supply a gas into the chamber along a gas flow path connected to an inside of the chamber, the gas flow path beginning from an outer periphery of the heating plate and extending along an upper surface of the heating toward an end portion on an outer periphery of the substrate; and an exhaust port configured to evacuate inside of the chamber through exhaust holes that are formed above the processing space and open downwards.

A substrate transfer mechanism for transferring a substrate to each of a plurality of stacked processing modules that process the substrate includes an arm base provided with a first driver, a lift configured to move up and down the arm base, a first arm extending transversely from a lower side of the arm base, and having a tip end that pivots around a vertical axis with respect to the arm base by the first driver, a second arm extending transversely from an upper side of the tip end of the first arm, and having a tip end that pivots around a vertical axis with respect to the first arm along with the pivoting of the first arm, and a substrate holder provided on an upper side of the tip end of the second arm, and configured to rotate around a vertical axis with respect to the second arm.

A linearly moving mechanism includes an internal moving body provided within a case body and configured to be moved in a linear direction, the internal moving body being configured to move an external moving body connected to a connection member protruded from the case body through an opening formed at the case body; a seal belt extending in the linear direction and provided within the case body to close the opening, a first surface side of both end portions of the seal belt in a widthwise direction thereof facing an edge portion of the opening while being spaced apart therefrom; and a deformation suppressing member provided to face a second surface side of the both end portions to suppress deformation of the seal belt, the seal belt being connected to the internal moving body to be moved along with a movement of the internal moving body.

An apparatus for treating a substrate includes a heat treatment chamber having an interior space, a housing that is provided in the interior space and that has a treatment space therein, a gas supply line that supplies, into the treatment space, a hydrophobic gas for hydrophobicizing the substrate, and a decomposition unit that decomposes an alkaline gas leaking from the treatment space to the interior space.