An end of polishing of a wafer is determined for each of wafers at a high accuracy. A wafer processing method includes: a first process of acquiring an initial state of a processing target surface of a wafer; a second process of forming a coating film on the wafer after the first process; a third process of polishing the processing target surface of the wafer by a polishing member based on initial polishing conditions in a state where the polishing member is in contact with the processing target surface of the wafer; a fourth process of acquiring a processed state of the processing target surface of the wafer after the third process; and a fifth process of determining an end of polishing, an insufficiency in polishing, or an excess in polishing based on the initial state and the processed state.

A substrate processing device includes a transfer chamber configured to transfer a substrate under an atmospheric atmosphere and a plurality of processing units each including at least one processing chamber for processing the substrate under a vacuum atmosphere and at least one load-lock chamber connected to the processing chamber to switch an inner atmosphere thereof between the atmospheric atmosphere and the vacuum atmosphere. The transfer chamber includes a connection unit configured to connect the transfer chamber and the load-lock chamber such that each of the processing units is detachably attached. The connection unit includes an opening that allows the transfer chamber to communicate with the load-lock chamber, and an opening/closing mechanism configured to open and close the opening portion.

The present invention provides a substrate treating apparatus. The substrate treating apparatus includes: a first process chamber having a first treatment space therein; a second process chamber having a second treatment space therein; and an exhaust unit exhausting atmospheres of the first treatment space and the second treatment space, in which the exhaust unit includes: an integrated exhaust line; a first exhaust line connecting the first process chamber and the integrated exhaust line; a second exhaust line connecting the second process chamber and the integrated exhaust line; and a partition wall partitioning a partial section of a flow path within the integrated exhaust line into a first flow path through which a fluid exhausted through the first exhaust line flows and a second flow path through which a fluid discharged through the second exhaust line flows.

The present invention provides a method of treating a substrate, the method including: performing a first heating process of heat-treating the substrate formed with a film, and a second heating process of heat-treating the substrate after the first heating process is performed; a collection operation of collecting temperature data of a first heating plate which heats the substrate in the first heating process; and a first control operation of adjusting a temperature of a second heating plate which heats the substrate in the second heating process based on the temperature data.

An atmosphere-to-vacuum (ATV) transfer module for a substrate processing tool includes a first side configured to interface with at least one loading station, a transfer robot assembly arranged within the ATV transfer module, and a second side opposite the first side. The transfer robot assembly is configured to transfer substrates between the at least one loading station and at least one load lock arranged between the ATV transfer module and a vacuum transfer module (VTM). The second side is configured to interface with the at least one load lock. The transfer robot assembly is arranged adjacent to the second side, and the at least one load lock extends through the second side into an interior volume of the ATV transfer module.

A wafer inspection apparatus according to one embodiment is a wafer inspection apparatus including a plurality of inspection parts arranged in a height direction and a lateral direction, and includes a pair of air circulating means disposed at both ends in a longitudinal direction of an air circulating region including the plurality of inspection parts arranged in the lateral direction and configured to circulate air in the circulating region.

A substrate processing method is a method of processing a substrate on which a metal-containing liquid for a film below a resist is applied, wherein prior to a heating process of performing a heat treatment on the substrate applied with the metal-containing liquid, the substrate processing method includes: a deprotection promoting process of promoting deprotection of functional groups in a material for the film included in the substrate on which the metal-containing liquid has been applied; a solvent removing process of removing a solvent included in the metal-containing liquid on the substrate; and a moisture absorbing process of bringing a surface of the substrate into contact with moisture.

A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO.sub.2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.

Disclosed in the present disclosure are a cleaning machine and a cleaning method. The cleaning machine includes: a wet cleaning module, configured to execute a wet cleaning process on a wafer; a dry cleaning module, configured to execute a dry cleaning process on the wafer; a conveying module, configured to input the wafer into the wet cleaning module or the dry cleaning module, or output the wafer from the wet cleaning module or the dry cleaning module; a transferring module, configured to transfer the wafer from the wet cleaning module to the dry cleaning module or transfer the wafer from the dry cleaning module to the wet cleaning module; and a processing module, configured to extract gas from the transferring module.

A substrate processing apparatus includes: a loading/unloading block; a processing station provided on one of left and right sides of the loading/unloading block; a relay block provided on one of left and right sides of the processing station; processing blocks provided side by side in a left-right direction to form the processing station, each of the processing blocks including a processing module configured to perform a process on the substrate and a main transfer mechanism configured to deliver the substrate to the processing module; and bypass transfer mechanisms provided separately from the main transfer mechanism and provided respectively for the processing blocks arranged side by side in the left-right direction to transfer the substrate between left and right blocks, wherein bypass transfer paths for the substrate transferred by the plurality of bypass transfer mechanisms have heights different from each other, and partially overlap each other in a plan view.