Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO.sub.2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

Provided is a method for manufacturing a semiconductor silicon wafer capable of inhibiting P-aggregation defects (Si-P defects) and SF in an epitaxial layer. The method includes a step of forming a silicon oxide film with a thickness of at least 300 nm or thicker only on the backside of the silicon wafer substrate by the CVD method at a temperature of 500° C. or lower after the step of forming the silicon oxide film, a step of heat treatment where the substrate is kept in an oxidizing atmosphere at a constant temperature of 1100° C. or higher and 1250° C. or lower for 30 minutes or longer and 120 minutes or shorter after the heat treatment, a step of removing surface oxide film formed on the front surface of the substrate, and a step of depositing a silicon monocrystalline epitaxial layer on the substrate after the step of removing the surface oxide film.

A high voltage power supply apparatus includes a high voltage direct current voltage source, a power switch configured to apply an output of the high voltage direct current voltage source to process equipment, and a sensing circuit unit including a sensor unit including a sensor and at least one operational amplifier, a reference voltage detection unit connected to a node between the sensor and the at least one operational amplifier, and a digital signal processing unit, wherein the sensing circuit unit is connected to an output terminal through which an output of the high voltage direct current voltage source is applied to the process equipment.

A processing apparatus includes a chuck configured to hold a substrate; a moving unit to which a processing tool configured to process the substrate is mounted; a sprinkler configured to spray a cleaning liquid configured to clean the moving unit from an outside of the moving unit; and a housing accommodating the chuck, the processing tool, and the sprinkler therein. The sprinkler includes a fixed unit fixed to an inside of the housing, and a rotating unit rotatably supported at the fixed unit. The rotating unit includes a nozzle configured to discharge the cleaning liquid, and a rotation block configured to hold the nozzle.

A substrate cleaning line and a substrate cleaning system including the same are disclosed. The substrate cleaning line may include a chamber portion including a plurality of cleaning chambers to clean a substrate, and a first return robot to load, unload, or transfer the substrate from or to the plurality of cleaning chambers, wherein the cleaning chambers may be stacked on each other in a vertical direction.

A method of cleaning for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto a component in the polishing system while the component is spaced away from a polishing pad of the polishing system to clean the component, and moving the component into contact with the polishing pad.

A tool and methods of removing films from bevel regions of wafers are disclosed. The bevel film removal tool includes an inner motor nested within an outer motor and a bevel brush secured to the outer motor. The bevel brush is adjustable radially outward to allow the wafer to be inserted in the bevel brush and to be secured to the inner motor. The bevel brush is adjustable radially inward to engage one or more sections of the bevel brush and to bring the bevel brush in contact with a bevel region of the wafer. Once engaged, a solution may be dispensed at the engaged sections of the bevel brush and the inner motor and the outer motor may be rotated such that the bevel brush is rotated against the wafer such that the bevel films of the wafer are both chemically and mechanically removed.

A cleaning device includes: a plurality of rollers that hold a peripheral edge part of a substrate; a rotation driving unit that rotates the substrate by rotationally driving the plurality of rollers; a cleaning member that abuts on the substrate and cleans the substrate; a cleaning liquid supply nozzle that supplies a cleaning liquid to the substrate; a microphone that detects a sound generated when a notch of the peripheral edge part of the substrate hits the plurality of rollers; and a rotation speed calculation unit that calculates a rotation speed of the substrate on the basis of the sound detected by the microphone.

A cleaning assembly includes a substrate having a lower surface to be held on a holding unit disposed in a processing apparatus and a cleaning member disposed on an upper surface of the substrate. A suction surface of a conveying unit is cleaned by an action of the cleaning member in a state in which the cleaning assembly is held on the holding unit.

A cover for a swing member of a substrate processing apparatus includes an upper surface including a first groove, and a first side edge and a second side edge located respectively at both ends of the upper surface in the short-length direction of the cover, where a bottom portion of the first groove is located lower than the first side edge and the second side edge.