The present disclosure relates to load cups that include an annular substrate station configured to receive a substrate. The annular substrate station surrounds a nebulizer located within the load cup. The nebulizer includes a set of energized fluid nozzles disposed on an upper surface of the nebulizer adjacent to an interface between the annular substrate station and the nebulizer. The set of energized fluid nozzles are configured to release energized fluid at an upward angle relative to the upper surface.

Provided is a method, device, and program for determining a timing of removing a substrate from a cassette in substrate processing device, and substrate processing device. In the method, a tentative removal time point of each substrate is calculated by adding a transfer time to a tentative removal time point of the one previous substrate, wherein the transfer time is required from the start of an action of removing a substrate from the cassette to the end of an action of delivering the substrate to an exchanger.

A chemical mechanical polishing system includes a platen to support a polishing pad, a boiler, a component that is movable between a first position spaced from the polishing pad and a second position in contact with the polishing pad, a plurality of nozzles to direct steam from the boiler onto the component of the polishing system when located at the first position, an actuator to move the component from the first position to the second position in contact with the polishing pad, and a controller configured to cause the treatment station to direct the steam onto the component to clean the component, and cause the actuator to move the cleaned component from the treatment station into contact with the polishing pad.

A wax coating apparatus for wafer mounting of the embodiment includes: a vacuum chuck in which a vacuum flow path providing vacuum pressure is embedded; a heating plate mounted on an upper side of the vacuum chuck and having holes and grooves connected to the vacuum flow path of the vacuum chuck in order to suck a block to which a wafer is adhered; a rotating shaft connected to a lower side of the vacuum chuck; a driving motor for rotating the rotating shaft; and a wax nozzle provided to be spaced apart from the upper side of the vacuum chuck, wherein the heating plate may be operated so as to heat the block while the wax nozzle sprays wax on the block.

A substrate cleaning apparatus includes a substrate holding mechanism holding the substrate, a rotation mechanism rotating the substrate held by the substrate holding mechanism, and a cleaning mechanism cleaning the substrate. The cleaning mechanism includes a support column, an arm extending from the support column and having a fixed height position, a cleaning tool supported by the arm and cleaning a surface of the substrate by contacting the surface, a lift mechanism moving the cleaning tool vertically with respect to the arm between an raised position separated from the substrate and a lowered position in contact with the substrate, and a controller controlling at least a speed at which the cleaning tool descends.

A wafer transfer device, a wafer transfer method and a cleaning module of a chemical mechanical planarization machine are provided. The wafer transfer device comprises: at least one claw clamping arm module for picking up and placing a wafer; at least one Z-axis moving module, connected to the claw clamping arm module, for performing a movement of the claw clamping arm module in a Z-axis direction; and at least one X-axis moving module, connected to a lower end of the Z-axis moving module, for performing a movement of the claw clamping arm module in a X-axis direction.

A chemical mechanical polishing method is provided. A chemical mechanical polishing method comprising providing a polishing pad, supplying a first purging compound having a first temperature onto the polishing pad, supplying a first slurry having a third temperature onto the polishing pad supplied with the first purging compound, supplying a second purging compound having a second temperature lower than the first temperature onto the polishing pad, and supplying a second slurry having a fourth temperature lower than the third temperature onto the polishing pad supplied with the second purging compound.

A substrate cleaning device includes: a pressing member that cleans a substrate by contacting the substrate; a load measurement unit that measures a pressing load of the cleaning member; and a control unit that repeats an operation of comparing the measurement value of the load measurement unit with the setting load, changing the pressing amount of the cleaning member by a first movement amount so that a difference value decreases, when the difference value is larger than a first threshold value and equal to or smaller than a second threshold value, and changing the pressing amount of the cleaning member by a second movement amount larger than the first movement amount so that the difference value decreases, when the difference value is larger than the second threshold value, until the difference value becomes equal to or smaller than the first threshold value.

A semiconductor wafer processing system for processing a set of semiconductor wafers includes a controller, a transfer robot controlled by the controller, a wet bath for containing a cleaning solution, and a cassette positioned in the wet bath for holding the set of wafers. The transfer robot transfers the wafer from a transfer location to the cassette and the controller controls the transfer robot during the transfer.

A substrate cleaning device includes: a pressing member that cleans a substrate by contacting the substrate; a load measurement unit that measures a pressing load of the cleaning member; and a control unit that repeats an operation of comparing the measurement value of the load measurement unit with the setting load, changing the pressing amount of the cleaning member by a first movement amount so that a difference value decreases, when the difference value is larger than a first threshold value and equal to or smaller than a second threshold value, and changing the pressing amount of the cleaning member by a second movement amount larger than the first movement amount so that the difference value decreases, when the difference value is larger than the second threshold value, until the difference value becomes equal to or smaller than the first threshold value.