Disclosed is a control device that controls an operation of a substrate processing apparatus that forms a laminated film by forming a first film on a substrate and then forming a second film. The control device includes a recipe memory unit storing first and second film formation conditions to form the first and second films, a model memory storing first and second process models that represent the effects of the first film formation conditions on the properties of the first and second films, and a controller configured to: adjust the second film formation condition based on a measured value of a property of the laminated film formed by the first and second film formation conditions, and the second process model stored in the model memory unit; and determine whether or not to adjust the first film formation condition based on an expected value of the property of the laminated film.

A transporter for transporting an article used in semiconductor fabrication is provided. The transporter includes a robotic arm. The transporter further includes two platens connected to the robotic arm. Each of the two platens an inner surface facing the other, and a number of gas holes are formed on each of the inner surfaces of the two platens. The transporter also includes a gas supplier placed in communication with the gas holes. The gas supplier is used to control the flow of gas through the gas holes.

Embodiments disclosed herein generally relate to methods and apparatus for processing of the bottom surface of a substrate to counteract thermal stresses thereon. Correcting strains are applied to the bottom surface of the substrate which compensate for undesirable strains and distortions on the top surface of the substrate. Specifically designed films may be formed on the back side of the substrate by any combination of deposition, implant, thermal treatment, and etching to create strains that compensate for unwanted distortions of the substrate. In some embodiments, localized strains may be introduced by locally altering the hydrogen content of a silicon nitride film or a carbon film, among other techniques. Structures may be formed by printing, lithography, or self-assembly techniques. Treatment of the layers of film is determined by the stress map desired and includes annealing, implanting, melting, or other thermal treatments.

An electrostatic clamp and a method for fabricating the same. The electrostatic clamp includes a first stack and a second stack, wherein the first stack is joined with the second stack. Each of the first and second stacks includes a clamp body, one or more electrodes disposed on the clamp body, a dielectric plate disposed on the electrodes, and a plurality of channels inside the clamp body.

A substrate processing system including a processing section arranged to hold a processing atmosphere therein, a carrier having a shell forming an internal volume for holding at least one substrate for transport to the processing section, the shell being configured to allow the internal volume to be pumped down to a predetermined vacuum pressure that is different than an exterior atmosphere outside the substrate processing system, and a load port communicably connected to the processing section to isolate the processing atmosphere from the exterior atmosphere, the load port being configured to couple with the carrier to pump down the internal volume of the carrier and to communicably connect the carrier to the processing section, for loading the substrate into the processing section through the load port.

A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a chamber body, which is configured to be filled with a process fluid, and a substrate carrier. The substrate carrier is disposed outside of the process volume while substrates are loaded onto the substrate carrier, but is rotated to a processing position either simultaneously or before entering the process fluid. The substrate carrier is rotated to a process position parallel to an electrode before an electric field is utilized to perform a post-exposure bake process on the substrate.

Substrate processing systems or platforms and methods configured to process substrates including of extreme ultraviolet (EUV) mask blanks are disclosed. Systems or platforms provide a small footprint, high throughput of substrates and minimize defect generation. The substrate processing system platform comprises a single central transfer chamber, a single transfer robot, a substrate flipping fixture, and processing chambers are positioned around the single central transfer chamber.

A substrate transfer device and method as well as a photolithography apparatus are disclosed. The device includes a motion platform and a plurality of transfer stages which are arranged side-by-side along a first direction are configured to transfer substrates in a second direction that is perpendicular to the first direction. The motion platform includes a base table and a plurality of motion tables in movable connection with the base table. Each of the transfer stages is connected to, and movable in the first direction with, a corresponding one of the motion tables. A pre-alignment assembly for pre-alignment and positional adjustments of the substrates is provided on the motion platform and on the transfer stages. When one of the transfer stages is unloading a first substrate, another one of the transfer stages receives a second substrate and effectuates its first- and second-directional pre-alignment with the aid of the pre-alignment assembly.

A process of preparing a wafer having a diameter of two inches or more, at least a surface of the wafer being formed from a group III nitride crystal, including preparing an alkaline or acidic etching liquid containing a peroxodisulfate ion as an oxidizing agent that accepts an electron, accommodating the wafer such that the surface of the wafer is immersed in the etching liquid such that the surface of the wafer is parallel with a surface of the etching liquid; and radiating light from the surface side of the etching liquid onto the surface of the wafer without agitating the etching liquid. First and second etching areas disposed at an interval from each other are defined on the surface of the wafer. In the process of radiating the light onto the surface of the wafer, the light is radiated perpendicularly onto surfaces of the first and second etching areas.

A method for cleaning a reflective photomask is provided. The method includes: disposing the reflective photomask in a chamber; providing hydrogen radicals to the chamber; and exposing the reflective photomask to the hydrogen radicals. A method of manufacturing a semiconductor structure and system for forming a semiconductor structure are also provided.