Processing methods may be performed to form a pixel isolation structure on a semiconductor substrate. The method may include forming a pixel isolation bilayer on the semiconductor substrate. The pixel isolation bilayer may include a high-k layer overlying a stopping layer. The method may include forming a lithographic mask on a first region of the pixel isolation bilayer. The method may also include etching the pixel isolation bilayer external to the first region. The etching may reveal the semiconductor substrate. The etching may form the pixel isolation structure.

This method includes a step of imaging, by an imaging apparatus in a substrate treatment system, a reference substrate which is a reference for condition setting and acquiring a captured image of the reference substrate; and a step of imaging, by the imaging apparatus, a treated substrate on which the predetermined treatment has been performed under a current treatment condition and acquiring a captured image of the treated substrate. A deviation amount in color information between the captured image of the treated substrate and the captured image of the reference substrate is calculated. A correction amount of the treatment condition is calculated based on a correlation model acquired in advance and on the deviation amount in the color information. Also included is a step of setting the treatment condition based on the correction amount and performing the treatment on a target substrate based on the set treatment condition.

Disclosed is a substrate treating apparatus including a coating module, an exposure module, a plurality of developing modules, and a transfer unit that performs transfer of a substrate between the modules. The plurality of developing modules include a plurality of post-exposure bake units that perform a bake process on a substrate on which an exposure process is completely performed in the exposure module. The substrate treating apparatus further includes a controller that controls the transfer of the substrate by the transfer unit. When transferring a substrate from the exposure module to the plurality of post-exposure bake units, the controller performs control to select a post-exposure bake unit in which the least delay time occurs, among the plurality of post-exposure bake units and to transfer the substrate to the selected post-exposure bake unit.

The present disclosure provides a semiconductor fabrication apparatus. The semiconductor apparatus includes a processing chamber for etching; a substrate stage integrated in the processing chamber and being configured to secure a semiconductor wafer; a reflective mirror configured inside the processing chamber to reflect thermal energy from the heating mechanism toward the semiconductor wafer; and a heating mechanism embedded in the process chamber and is operable to perform a baking process to remove a by-product generated during the etching. The heating mechanism is integrated between the reflective mirror and a gas distribution plate of the processing chamber.

This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

A lithography includes a storage tank that stores process chemical fluid, an anti-collision frame, and an integrated sensor assembly. The storage tank includes a dispensing port positioned at a lowest part of the storage tank in a gravity direction. The anti-collision frame is coupled to the storage tank. An integrated sensor assembly is disposed on at least one of the anti-collision frame and the storage tank to measure a variation in fluid quality in response to fluid quality measurement of fluid.

An apparatus for transferring a target, such as a substrate or a substrate support structure onto which a substrate has been clamped, from a substrate transfer system to a vacuum chamber of a lithography system. The apparatus comprises a load lock chamber for transferring the target into and out of the vacuum chamber. The load lock chamber comprises a first wall with a first passage providing access between a robot space and the interior of the load lock chamber, a second wall with a second passage providing access between the interior of the load lock chamber and the vacuum chamber, and plurality of handling robots for transferring the targets comprising: a first handling robot movable within the robot space to access the substrate transfer system and the first passage; and a second handling robot movable within the load lock chamber to access the first passage and the second passage.

An electronic apparatus includes: an electronic module; a display panel disposed on the electronic module and including a first display region and a second display region adjacent to the first display region, the second display region overlapping the electronic module; and a polarization plate disposed on the display panel and including a first polarization region overlapping the first display region and a second polarization region including a polarization part and a non-polarization part having higher light transmittance than the polarization part, the non-polarization part overlapping the second display region.

The present disclosure provides an apparatus for fabricating a semiconductor structure, including an air flow redistribution member configured to receive an air flow at a first end and eject the air flow at a second end. The air flow redistribution member includes a first air flow redistribution plate and a second air flow redistribution plate between the first air flow redistribution plate and the second end.

A lithographic apparatus comprising a substrate storage module having a controllable environment for protecting lithographically exposed substrates from ambient air. The substrate storage module is configured to store at least twenty substrates and the substrate storage module is an integral part of the lithographic apparatus. The substrate storage module may be used to protect substrates from ambient air during stitched lithographic exposures.