A system and method for efficiently creating layout for memory bit cells are described. In various implementations, cells of a library use Cross field effect transistors (FETs) that include vertically stacked gate all around (GAA) transistors with conducting channels oriented in an orthogonal direction between them. The channels of the vertically stacked transistors use opposite doping polarities. A first category of cells includes devices where each of the two devices in a particular vertical stack receive a same input signal. The second category of cells includes devices where the two devices in a particular vertical stack receive different input signals. The cells of the second category have a larger height dimension than the cells of the first category.

A method for forming an integrated circuit layout including at least two standard cells having different cell heights is disclosed. The standard cells respectively have a well boundary to divide a PMOS region and an NMOS region. The standard cells are abutted side by side along their side edges in a way that the well boundaries of the cells are aligned along the row direction. The power rail and the ground rail of one of the standard cells are extended in width or length to connect to the power rail and the ground rail of the other one of the standard cells.

A 3D semiconductor device including: a first single crystal layer with first transistors; overlaid by a first metal layer; a second metal layer overlaying the first metal layer and being overlaid by a third metal layer; a logic gates including at least the first metal layer interconnecting the first transistors; second transistors disposed atop the third metal layer; third transistors disposed atop the second transistors; a top metal layer disposed atop the third transistors; and a memory array including word-lines, and at least four memory mini arrays, where each of the memory mini arrays includes at least four rows by four columns of memory cells, where each of the memory cells includes at least one of the second transistors or third transistors, sense amplifier circuit(s) for each of the memory mini arrays, the second metal layer provides a greater current carrying capacity than the third metal layer.

A system and method for creating chip layout are described. In various implementations, a standard cell uses unidirectional tracks for power connections and signal routing. A single track of the metal one layer that uses a minimum width of the metal one layer is placed within a pitch of a single metal gate. The single track of the metal one layer provides a power supply reference voltage level or ground reference voltage level. This placement of the single track provides a metal one power post contacted gate pitch (CPP) of 1 CPP. To further reduce voltage droop, a standard cell uses dual height and half the width of a single height cell along with placing power posts with 1 CPP. The placement of the multiple power rails of the dual height cell allows alignment of the power rails with power rails of other standard cells.

A 3D semiconductor device, the device including: a first level including a plurality of first metal layers; a second level, where the second level overlays the first level, where the second level includes at least one single crystal silicon layer, where the second level includes a plurality of transistors, where each transistor of the plurality of transistors includes a single crystal channel, where the second level includes a plurality of second metal layers, where the plurality of second metal layers include interconnections between the transistors of the plurality of transistors, where the second level is overlaid by a first isolation layer; and a connective path between the plurality of transistors and the plurality of first metal layers, where the connective path includes a via disposed through at least the single crystal silicon layer, and where at least one of the plurality of transistors includes a gate all around structure.

A semiconductor device includes: a standard cell array including a plurality of standard cells, each of the plurality of standard cells; a plurality of power supply lines configured to provide a power supply voltage and extending in a first direction; a capacitor structure including electrode structures included in each of a plurality of dielectric layers formed on the standard cell array, the capacitor structure having vias connecting the electrode structures; and contacts electrically connecting the capacitor structure and the standard cell array to each other. Each of the plurality of standard cells provides a unit capacitor circuit having capacitance that is based on a connection structure of active regions and gates of first and second transistors thereof.

An arrayed switch circuit includes a substrate, signal conductive pads and signal expansion pins. The signal conductive pads are disposed on the substrate at intervals, and the signal conductive pads are arranged to form a signal conductive pad array. Each of the signal conductive pads has a row position and a column position in the signal conductive pad array. A row signal switch is provided between any two adjacent signal conductive pads corresponding to the same row position, and a column signal switch is provided between any two adjacent signal conductive pads corresponding to the same column position. The signal expansion pins are connected to the signal conductive pads located on at least one side of the signal conductive pad array through signal expansion switches respectively.

A method for producing a 3D semiconductor device including: providing a first level including a first single crystal layer; forming peripheral circuitry in and/or on the first level, and includes first single crystal transistors; forming a first metal layer on top of the first level; forming a second metal layer on top of the first metal layer; forming second level disposed on top of the second metal layer; performing a first lithography step; forming a third level on top of the second level; performing a second lithography step; processing steps to form first memory cells within the second level and second memory cells within the third level, where the plurality of first memory cells include at least one second transistor, and the plurality of second memory cells include at least one third transistor; and deposit a gate electrode for second and third transistors simultaneously.

A semiconductor integrated circuit device includes a first power wiring that is formed on a semiconductor substrate and that extends in a first direction, a second power wiring that extends in the first direction such that the second power wiring is separated from the first power wiring, a first diffusion layer that is used for a p-channel type MOSFET and that is formed in a region between the first power wiring and the second power wiring, a second diffusion layer that is used for an n-channel type MOSFET and that is formed on a side of the second power wiring with respect to the first diffusion layer in the region between the first power wiring and the second power wiring, a first gate electrode that extends in a second direction perpendicular to the first direction and that straddles the first diffusion layer, a second gate electrode that extends in the second direction and that straddles the second diffusion layer, and a third diffusion layer for backgates that is formed below at least one of the first power wiring and the second power wiring and that is placed in a dotted manner along the first direction.

A method for producing a 3D memory device, the method including: providing a first level including a first single crystal layer and control circuits; forming at least one second level above the first level; performing a first etch step including etching holes within the second level; forming at least one third level above the at least one second level; performing a second etch step including etching holes within the third level; and performing additional processing steps to form a plurality of first memory cells within the second level and a plurality of second memory cells within the third level, where each of the first memory cells include one first transistor, where each of the second memory cells include one second transistor, where at least one of the first or second transistors has a channel, a source, and a drain having a same doping type.