An image sensing device may include a plurality of pixel regions included in a substrate, a plurality of taps structured to generate an electric potential difference in the substrate and capture photocharges generated by the plurality of pixel regions and migrated by the electric potential difference, wherein each of the taps comprises a control node disposed in the substrate and doped with a first conductive type impurity, a detection node disposed in the substrate and doped with a second conductive type impurity, and a control gate structured to include a gate electrode and a gate dielectric layer for electrically isolating the gate electrode from the substrate, wherein the control node is disposed at a first side of the detection node, and the control gate is disposed at a second side of the detection node, wherein the second side is an opposite side of the first side.

The present disclosure relates to a solid-state image pickup apparatus, a correction method, and an electronic apparatus, enabled to suppress an apparent uncomfortable feeling of an image output from a solid-state image pickup apparatus in which pixels of different OCL shapes are mounted mixedly. A solid-state image pickup apparatus according to an aspect of the present disclosure includes a pixel array in which a first pixel in which an OCL (On Chip Lens) of a standard size is formed and a second pixel in which an OCL of a size different from the standard size is formed are present mixedly, and a correction section that corrects a pixel value of the first pixel that is positioned in the vicinity of the second pixel among the first pixels on the pixel array. The present disclosure can be applied to, for example, a CMOS image sensor.

In some implementations, a pixel array may include a near infrared (NIR) cut filter layer for visible light pixel sensors of the pixel array. The NIR cut filter layer is included in the pixel array to absorb or reflect NIR light for the visible light pixel sensors to reduce the amount of MR light absorbed by the visible light pixel sensors. This increases the accuracy of the color information provided by the visible light pixel sensors, which can be used to produce more accurate images. In some implementations, the visible light pixel sensors and/or MR pixel sensors may include high absorption regions to adjust the orientation of the angle of refraction for the visible light pixel sensors and/or the MR pixel sensors, which may increase the quantum efficiency of the visible light pixel sensors and/or the MR pixel sensors.

An image sensor includes a substrate including a first surface and a second surface facing the first surface, a first photodiode located in a first region of the substrate and generating photocharges from light incident on the first region, a second photodiode located in a second region of the substrate and generating photocharges from light incident on the second region, and an isolation structure defining the first region in which the first photodiode is located and the second region in which the second photodiode is located, and extending between the first photodiode and the second photodiode. An area of the second region is smaller than an area of the first region, a first end of the isolation structure is coplanar with the second surface, and the isolation structure extends in a vertical direction from the second surface of the substrate toward the first surface of the substrate.

According to one embodiment, a light detector includes a first region, a second region, and a lens group. The first region includes a plurality of elements arranged along a first direction and a second direction. The first direction and the second direction cross each other. Each of the elements includes a first semiconductor region of a first conductivity type, and a second semiconductor region located on the first semiconductor region. The second semiconductor region is of a second conductivity type. The second region is adjacent to the first region in the second direction. The second region has a different structure from the first region. The lens group is positioned on the first and second regions. The lens group includes a plurality of lenses located to correspond respectively to the elements. The first region, the second region, and the lens group are repeatedly provided in the second direction.

An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

An image sensor comprising: a plurality of photoelectric conversion portions that convert light incident on a first surface of a semiconductor substrate into charge; a plurality of circuit portions, controlled from a second surface that is an opposite surface of the first surface of the semiconductor substrate, for transferring the charge converted by the photoelectric conversion portions; and first separation portions that separate the photoelectric conversion portions and the circuit portions for transferring the charge converted by the photoelectric conversion portions. At least part of the first separation portions are formed such that the area of the first surface is larger than the area of the second surface of at least part of the respective photoelectric conversion portions.

The deterioration of light condensing characteristics of an overall solid-state imaging device resulting from providing in-layer lenses is suppressed while preventing the deterioration of device characteristics of the solid-state imaging device and reduction of yield. A solid-state imaging device including: a semiconductor substrate on which a plurality of photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array; and a stacked body formed by stacking a plurality of layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices; a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface; and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has a plurality of structures at a height generally equal to a height of the in-layer lenses, the plurality of structures being provided on an outside of the imaging device region.

A light conversion device includes a substrate; a plurality of metal patterns provided on the substrate and separated from each other; a metal layer provided on the substrate and surrounding each of the plurality of metal patterns; a first slit positioned between the metal layer and each of the plurality of metal patterns and surrounding each of the plurality of metal patterns; and a light-emitting layer filling the first slit. The first slit and the metal pattern surrounded by the first slit are concentric. The metal layer and the plurality of metal patterns are aligned so that a first electric field enhancement occurs when a wave belonging to an invisible light band is incident to the first slit.

An image sensor includes; a pixel array including pixels arranged in a first direction and a second direction, wherein the pixels includes a first normal pixel and a first auto focus (AF) pixel adjacent in the first direction, and a second AF pixel and a second normal pixel adjacent in the first direction. Each of the first AF pixel and the second AF pixel includes at least two photodiodes, each of the first normal pixel and the second normal pixel has a quadrangular shape, a first length of the first AF pixel in the first direction is greater than a first length of the first normal pixel in the first direction, and a first length of the second AF pixel in the first direction is greater than a first length of the second normal pixel in the first direction.