A decrease in sensitivity of distance measurement is reduced. A light receiving element includes a first voltage application unit and a second voltage application unit, a first charge detection unit, and a second charge detection unit. The first voltage application unit and the second voltage application unit are configured in linear shapes extending in the same direction on the surface of the semiconductor substrate that performs photoelectric conversion of the incident light, are arranged apart from each other, and are provided with proximity portions and applied with different voltages. The first charge detection unit is arranged around the first voltage application unit on the surface of the semiconductor substrate and detects a charge generated by photoelectric conversion. The second charge detection unit is arranged around the second voltage application unit on the surface of the semiconductor substrate and detects a charge generated by photoelectric conversion.

A plurality of subpixels is included in one pixel. An imaging device includes a subpixel, a pixel, and a pixel array. The subpixel includes a photoelectric conversion element that receives light incident at a predetermined angle and outputs an analog signal on the basis of intensity of the received light. The pixel includes a plurality of the subpixels, a lens that condenses light incident from an outside on the subpixel, and a photoelectric conversion element isolation portion that does not propagate information regarding intensity of the light acquired in the photoelectric conversion element to the adjacent photoelectric conversion element, and further includes a light-shielding wall that shields light incident on the lens of another pixel. The pixel array includes a plurality of the pixels.

It is possible to curb noise, color mixing, and the like. An imaging apparatus includes: a semiconductor; a photoelectric conversion unit that is provided on the semiconductor substrate and generates electrical charge in accordance with the amount of received light through photoelectric conversion; an electrical charge holding unit that is disposed on a side closer to a first surface of the semiconductor substrate than the photoelectric conversion unit and holds the electrical charge transferred from the photoelectric conversion unit; an electrical charge transfer unit that transfers the electrical charge from the photoelectric conversion unit to the electrical charge holding unit; a vertical electrode that transmits the electrical charge generated by the photoelectric conversion unit to the electrical charge transfer unit and is disposed in a depth direction of the semiconductor substrate, and a first light control unit that is disposed on a side closer to a second surface that is a side opposite to the first surface of the semiconductor substrate than the vertical electrode, is disposed at a position overlapping the vertical electrode in a plan view of the semiconductor substrate from a normal line direction of the first surface, and has a T-shaped section in the depth direction of the substrate. The first light control member includes a first light control portion and a second light control portion extending in mutually intersecting directions in an integrated structure.

A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor.

There is provided a solid-state imaging device that includes a photoelectric conversion unit, a transfer gate, a floating diffusion unit, and a transistor. The photoelectric conversion unit produces a charge according to incident light. The transfer gate has a columnar shape having an opening that is continuous in a vertical direction, and transfers the charge from the photoelectric conversion unit. The floating diffusion unit is formed extending to a region surrounded by the opening of the transfer gate, and converts the transferred charge into a voltage signal. The transistor is electrically connected to the floating diffusion unit via a diffusion layer.

A sensing device includes a light-transmissible substrate, a light-transmissible electrode unit connected thereto, including multiple electrically independent electrode lines, and a light sensing unit connected to the light-transmissible substrate and the light-transmissible electrode unit. The light sensing unit includes a plurality of light sensors for sensing a light transmitted from the light-transmissible substrate. The light sensors are confined within the light-transmissible electrode unit and are electrically connectable to an outer component through the light-transmissible electrode unit.

A detection element, a manufacturing method thereof and a flat panel detector are disclosed. The detection element includes: a base substrate; a first electrode on the base substrate; a photoelectric conversion layer; a transparent electrode and a second electrode electrically connected with the transparent electrode on a side of the photoelectric conversion layer away from the first electrode. An orthographic projection of the photoelectric conversion layer on the base substrate completely falls within an orthographic projection of the first electrode on the base substrate, in a plane parallel to the base substrate, the transparent electrode is located at a middle portion of the photoelectric conversion, an orthographic projection of a portion of the photoelectric conversion layer not covered by the transparent electrode on the base substrate at least partially falls within an orthographic projection of the second electrode on the base substrate.

[Object] A solid-state imaging apparatus that can suppress degradation of image quality caused by a groove between lenses is provided, and a method for manufacturing the solid-state imaging apparatus is also provided.

[Solving Means]

A solid-state imaging apparatus according to the present disclosure includes multiple photoelectric conversion sections, and multiple lenses provided above the multiple photoelectric conversion sections. The multiple lenses each include a groove provided between the lenses, and the groove includes a bottom surface shaped to protrude downward.

The present disclosure generally relates to a surface grating in a photodetector device. In an example, a semiconductor device structure includes a photodetector device. The photodetector device includes one or more photodiodes disposed in or over a semiconductor substrate, and includes a surface grating disposed at a respective surface of each photodiode of the one or more photodiodes. The surface grating has one or more periodicities. Each periodicity of the one or more periodicities has a period that is along a direction parallel to a first lateral direction across the semiconductor substrate and that is equal to or less than half of a dimension of at least one photodiode of the one or more photodiodes along a direction parallel to the first lateral direction. The one or more periodicities includes multiple different pitches.

A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.