Provided are an image sensor and a manufacturing method thereof. In the image sensor, an insulating layer and a first silicon layer are sequentially on a silicon base. A first isolation structure is in the first silicon layer to define an active area (AA). A doped region is in a part of the first silicon layer in the AA and in a part of the silicon base thereunder. A second silicon layer is in a part of the first silicon layer in the AA and extends into the silicon base. An interconnection structure is on the first silicon layer and electrically connected with a transistor. A second isolation structure is in the silicon base under the first isolation structure and connected to the insulating layer. A passivation layer surrounds the silicon base and is connected to the doped region. A microlens is on the silicon base.

Implementations of image sensor packages may include: an image sensor die including a first largest planar side and a second largest planar side; an optically transmissive cover including a first largest planar side and a second largest planar side where the second largest planar side coupled to the first largest planar side of the image sensor die using an adhesive; and a light block material that fully covers edges of the image sensor die located between the first largest planar side and the second largest planar side of the image sensor die and fully covers edges of the optically transmissive cover between the first largest planar side and the second largest planar side of the optically transmissive cover. The light block material may extend across a portion of the first largest planar side and second largest planar side of the optically transmissive cover.

A reduced cross-talk pixel-array substrate includes a semiconductor substrate, a buffer layer, a metal annulus, and an attenuation layer. The semiconductor substrate includes a first photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the first photodiode region in a cross-sectional plane parallel to a first back-surface region of the back surface above the first photodiode region. The buffer layer is on the back surface and has a feature located above the first photodiode region with the feature being one of a recess and an aperture. The metal annulus is on the buffer layer and covers the trench. The attenuation layer is above the first photodiode region.

A radiation scanning system comprises a radiation detection sub-assembly, and a routing sub-assembly coupled to the radiation detection sub-assembly. The radiation detection sub-assembly comprises a first substrate electrically connected to the radiation detection sub-assembly, and a second substrate electrically connected to the first substrate. The radiation scanning system further comprises one or more radiation shields between the first substrate and the second substrate, and one or more semiconductor dice electrically connected to the second substrate on a side of the second substrate opposite the first substrate. Related radiation detector arrays radiation scanning systems are also disclosed.

A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a base substrate; a thin film transistor on the base substrate; an insulating layer on a side of the thin film transistor away from the base substrate; a photosensor on a side of the insulating layer away from the base substrate; a passivation layer on a side of the photosensor away from the base substrate; a scintillation layer on a side of the passivation layer away from the base substrate; and a reflective layer on a side of the scintillation layer away from the base substrate. The photosensor includes a first polarity layer in direct contact with the passivation layer. All sides of the first polarity layer other than a side internal to the photosensor are entirely in direct contact with the passivation layer.

An image sensor having a shield including, for example, a metal, is above an electrical charge storage element in a pixel region to block light incident toward the electrical charge storage element, thereby making it possible to reduce or prevent reading a charge value including leakage charge introduced to the electrical charge storage element, and thus adversely affecting an image result.

A photoelectric conversion device includes a semiconductor layer formed of silicon, a plurality of pixels formed in the semiconductor layer, and a pixel separation portion is formed to separate each of the plurality of pixels, wherein the pixel separation portion includes a metal filling portion and a dielectric film provided on a side portion of the metal filling portion, a material of the metal filling portion is copper, a material of the dielectric film is a silicon oxide, and a thickness of the dielectric film is not less than 50 nm and not more than 270 nm.

An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

An image sensor includes at least one image cell having a photodiode disposed in a substrate, a charge storage region disposed in the substrate to be spaced apart from the photodiode, a transfer gate electrode disposed on a channel region between the photodiode and the charge storage region to transfer a charge from the photodiode to the charge storage region, and a dummy pattern disposed on the substrate and configured to inhibit light from being introduced into the charge storage region from an adjacent image cell.