The present technology relates to a solid-state image pickup device that suppresses dark current while increasing the saturated charge amount, a manufacturing method therefor, and an electronic apparatus. The device includes a first photoelectric converter on a front surface side opposite to a light incident surface side of a substrate; a second photoelectric converter stacked on the first photoelectric converter; and a pixel isolation section, the pixel isolation section passing through the substrate. The first photoelectric converter includes a first plane-direction PN junction region joined in a plane direction parallel to a light incident surface of the substrate and a first perpendicular-direction PN junction region along a side wall of the pixel isolation section. The second photoelectric converter includes a second plane-direction PN junction region and a second perpendicular-direction PN junction region. The present technology can also be applied to a solid-state image pickup device or the like, for example.

The present technology relates to a solid-state image sensing device capable of restricting a deterioration in photoelectric conversion characteristic of a photoelectric conversion unit, and an electronic device. A solid-state image sensing device includes: a photoelectric conversion unit formed outside a semiconductor substrate; a charge holding unit for holding signal charges generated by the photoelectric conversion unit; a reset transistor for resetting the potential of the charge holding unit; a capacitance switching transistor connected to the charge holding unit and directed for switching the capacitance of the charge holding unit; and an additional capacitance device connected to the capacitance switching transistor. The present technology is applicable to solid-state image sensing devices and the like, for example.

A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.

A stacked light receiving sensor according to one embodiment includes a first substrate in a first layer, a second substrate joined with the first substrate and formed in a second layer, and a third substrate joined with the second substrate and formed in a third layer. An analog circuit reads a pixel signal from a pixel array. A logic circuit is connected to the analog circuit and outputs the pixel signal. A processing section executes processing based on a neural network computing model, on data based on the pixel signal. The pixel array is disposed on the first layer. The analog circuit is disposed on any one or more of the first to third layers. The logic circuit, the processing section, and a memory are disposed on any one or more of the second and third layers.

The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity.

The solid-state imaging device includes a semiconductor layer in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer, and a longitudinal transistor Tr1 in which a gate electrode is formed to be embedded in the semiconductor layer from a surface of the semiconductor layer. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion of the gate electrode of the longitudinal transistor Tr1 embedded in the semiconductor substrate and is connected to a channel formed by the longitudinal transistor Tr1.

To improve accuracy of distance measurement using a Z pixel having the same size as size of a visible light pixel. In a solid-state imaging apparatus, a visible light converting block includes a plurality of visible light converting units in which light receiving faces for receiving visible light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received visible light, and a visible light electric charge holding unit configured to exclusively hold the electric charges respectively generated by the plurality of visible light converting units in periods different from each other. An infrared light converting block includes a plurality of infrared light converting units in which light receiving faces which have substantially the same size as size of the light receiving faces of the visible light converting units and which receive infrared light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received infrared light, and an infrared light electric charge holding unit configured to collectively and simultaneously hold the electric charges respectively generated by the plurality of infrared light converting units.

There is provided an imaging device, an electronic apparatus including an imaging device, and an automotive vehicle including an electronic apparatus including an imaging device, including: a first substrate including a first set of photoelectric conversion units; a second substrate including a second set of photoelectric conversion units; and an insulating layer between the first substrate and the second substrate; where the insulating layer has a capability to reflect a first wavelength range of light and transmit a second wavelength range of light that is longer than the first wavelength range of light.

An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors; an overlaying oxide on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of first image sensors; and a third level overlaying the second level, where the third level includes a plurality of second image sensors, where the second level is bonded to the first level, where the bonded includes an oxide to oxide bond; and an isolation layer disposed between the second mono-crystal layer and the third level.

An imaging element includes a photoelectric conversion section 23 including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked. An inorganic oxide semiconductor material layer 23B including a first layer 23C and a second layer 23D, from side of the first electrode, is formed between the first electrode 21 and the photoelectric conversion layer 23A, and ρ.sub.1≥5.9 g/cm.sup.3 and ρ.sub.1−ρ.sub.2≥0.1 g/cm.sup.3 are satisfied, where ρ.sub.1 is an average film density of the first layer 23C and ρ.sub.2 is an average film density of the second layer 23D in a portion extending for 3 nm from an interface between the first electrode 21 and the inorganic oxide semiconductor material layer 23B.