A pixel-array substrate includes a semiconductor substrate, a buffer layer, and a metal annulus. The semiconductor substrate includes a first-photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the first-photodiode region in a cross-sectional plane parallel to a first back-surface region of the back surface above the first-photodiode region. The buffer layer is on the back surface and has (i) a thin buffer-layer region located above the first-photodiode region and (ii) a thick buffer-layer region forming an annulus above the trench in a plane parallel to the cross-sectional plane. The metal annulus is on the buffer layer and covers the thick buffer-layer region.

The present invention relates to a multispectral image sensor having a pixel array for detecting images with light components in different wave-length ranges, comprising a plurality of imaging layers each embedded in a semiconductor substrate, wherein in each of the imaging layers an array of photodetecting regions is provided, wherein the photodetecting regions are configured with different absorption characteristics, wherein the imaging layers are stacked so that the photodetecting regions of the arrays are aligned, wherein the absorption characteristics allow a preferred absorption of light components of at least one predetermined wavelength range.

A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate, a stack covering the substrate and including a first photosensitive layer, an electrically-insulating layer, a second photosensitive layer, and color filters. The image sensor further includes electrodes on either side of the first photosensitive layer and delimiting first photodiodes, and electrodes on either side of the second photosensitive layer and delimiting second photodiodes. The first photosensitive layer absorbs the electromagnetic waves of the visible spectrum and of a portion of the infrared spectrum and the second photosensitive layer absorbs the electromagnetic waves of the visible spectrum and gives way to the electromagnetic waves of the portion of the infrared spectrum.

A solid-state imaging element including a phase difference detection pixel pair that includes first and second phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit arranged at an upper side of a semiconductor substrate and a second photoelectric conversion unit arranged within the semiconductor substrate. The first photoelectric conversion film may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.

A read-out speed is increased. A solid-state imaging device (100) according to an embodiment is a solid-state imaging device including a plurality of photoelectric conversion elements (PD3) arrayed in a matrix, and each of the photoelectric conversion elements includes: a first electrode and a second electrode (112, 117) that are disposed such that principal planes thereof face each other; a photoelectric conversion film (113) that is disposed between the first electrode and the second electrode; a semiconductor layer (114) that is disposed between the photoelectric conversion film and the second electrode and is configured such that a first surface is in contact with the photoelectric conversion film and at least a portion of a second surface on a side opposite to the first surface is in contact with the second electrode; an insulating film (316) that is disposed within the semiconductor layer; and a third electrode (115) that is disposed within the insulating film.

An image sensor includes a color filter array, a first photoelectric conversion device configured to absorb first light passing through the color filter array and convert the absorbed first light into electrical signals, and a second photoelectric conversion device configured to absorb second light passing through both the color filter array and the first photoelectric conversion device and convert the absorbed second light into electrical signals. The first photoelectric conversion device includes a first photoelectric conversion layer configured to selectively absorb a mixed light of the first and second colors. The second photoelectric conversion device comprises a second photoelectric conversion layer configured to absorb light including a third color. Each of the first to third colors is one of three primary colors. The image sensor combines the electrical signals converted from the first and second photoelectric conversion devices to obtain electrical signals of the first to third colors.

An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

A semiconductor device includes a first adsorption layer, a first bonding layer, a second bonding layer, and a second adsorption layer stacked on a first substrate, and a conductive pattern structure penetrating through the first adsorption layer, the first bonding layer, the second bonding layer and the second adsorption layer. The first and second bonding layers are in contact with each other, and each of the first and second adsorption layers includes a low-K dielectric material.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material. The second organic semiconductor material has a Highest Occupied Molecular Orbital (HOMO) level being deeper than a Lowest Unoccupied Molecular Orbital (LUMO) level of the first organic semiconductor material and having a difference of 1.0 eV or more and 2.0 eV or less from the LUMO level of the first organic semiconductor material. The third organic semiconductor material has a crystalline property and has a linear absorption coefficient of 10000 cm.sup.−1 or less in a visible light region and an optical absorption edge wavelength of 550 nm or less.

An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors; an overlying oxide disposed on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of image sensors, where the second level is bonded to the first level, where the bonded includes an oxide to oxide bond; and a plurality of pixel control circuits, where each of the plurality of image sensors is directly connected to at least one of the plurality of pixel control circuits, and where the integrated device includes a plurality of memory circuits.