The present technology relates to a solid-state image sensing device capable of restricting a deterioration in photoelectric conversion characteristic of a photoelectric conversion unit, and an electronic device. A solid-state image sensing device includes: a photoelectric conversion unit formed outside a semiconductor substrate; a charge holding unit for holding signal charges generated by the photoelectric conversion unit; a reset transistor for resetting the potential of the charge holding unit; a capacitance switching transistor connected to the charge holding unit and directed for switching the capacitance of the charge holding unit; and an additional capacitance device connected to the capacitance switching transistor. The present technology is applicable to solid-state image sensing devices and the like, for example.

There is provided a solid-state imaging device that includes a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

An imaging element includes a photoelectric conversion section that includes a first electrode, a photoelectric conversion layer, and a second electrode stacked on one another. An inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer. The inorganic oxide semiconductor material layer includes indium (In) atoms, gallium (Ga) atoms, tin (Sn) atoms, and zinc (Zn) atoms.

A solid-state image sensor includes a plurality of imaging element blocks each configured from a plurality of imaging elements. Each of the imaging elements includes a first electrode, a charge accumulating electrode arranged in a spaced relation from the first electrode, a photoelectric conversion portion contacting with the first electrode and formed above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion portion. The first electrode and the charge accumulating electrode are provided on an interlayer insulating layer, and the first electrode is connected to a connection portion provided in the interlayer insulating layer.

An image pickup element includes a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode stacked on one another. Between the first electrode and the photoelectric conversion layer, an oxide semiconductor layer and an oxide film are formed from the first electrode side.

An organic compound represented by general formula (1) is a novel organic compound having an absorption band in the near infrared region, and is useful for infrared absorbing dyes, optical films, and organic electronic devices such as photoelectric conversion elements, wherein R.sup.1 to R.sup.18 each independently represent a hydrogen atom, an aryl group, a heteroaryl group, an alkyl group, a cycloalkyl group, a halogen atom, a hydroxy group, an alkoxy group, a mercapto group, an alkylthio group, a nitro group, a substituted amino group, an amide group, an acyl group, a carboxyl group, an acyloxy group, a cyano group, a sulfo group, a sulfamoyl group, an alkylsulfamoyl group, a carbamoyl group, or an alkylcarbamoyl group; and X represents a substituted or unsubstituted methine group, a silylidyne group, a germylidyne group, a stannylidyne group, a nitrogen atom, a phosphorus atom, an arsenic atom, or an antimony atom. ##STR00001##

A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Band 1 absorber layer on the common ground layer, a barrier layer on the Band 1 absorber layer, a Band 2 absorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Band 2 absorber layer, a removed portion of the barrier layer and a removed portion of the Band 1 absorber layer, wherein the ring opening does not extend through the Band 1 absorber layer, a first contact on a portion of the Band 2 absorber layer inside the ring, and a second contact on a portion of the Band 2 absorber layer outside the ring. The Band 1 absorber layer and the Band 2 absorber layer are n-type, or the Band 1 absorber layer and the Band 2 absorber layer are p-type.

Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

A solid-state imaging device includes: a light receiving surface; and a plurality of pixels that is disposed in a matrix at positions opposed to the light receiving surface. The respective pixels have different depths from the light receiving surface. Each of the pixels includes a plurality of photoelectric conversion sections and a plurality of electric charge holding sections one or more of which are provided for each of the plurality of photoelectric conversion sections. The photoelectric conversion sections each photoelectrically convert light coming through the light receiving surface. The electric charge holding sections each hold electric charge transferred from the corresponding photoelectric conversion section. Each of the pixels further includes a plurality of transfer transistors one or more of which are provided for each of the photoelectric conversion sections. The plurality of transfer transistors each includes a vertical gate electrode that reaches at least the corresponding photoelectric conversion section and transfers electric charge from the corresponding photoelectric conversion section to the corresponding electric charge holding section. In each of the pixels, the plurality of transfer transistors is disposed along a border between the two or four pixels adjacent to each other.