A pixel-array substrate includes a semiconductor substrate, a buffer layer, and a metal annulus. The semiconductor substrate includes a first-photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the first-photodiode region in a cross-sectional plane parallel to a first back-surface region of the back surface above the first-photodiode region. The buffer layer is on the back surface and has (i) a thin buffer-layer region located above the first-photodiode region and (ii) a thick buffer-layer region forming an annulus above the trench in a plane parallel to the cross-sectional plane. The metal annulus is on the buffer layer and covers the thick buffer-layer region.

A sensor includes a visible light sensor configured to sense light in a visible wavelength spectrum, a near infra-red light sensor on the visible light sensor and configured to sense light in a near infra-red wavelength spectrum, and an optical filter on the near infra-red light sensor and configured to selectively transmit the light in the visible wavelength spectrum and the light in the near infra-red wavelength spectrum, and an electronic device.

A solid-state imaging element (1) according to the present disclosure includes a photoelectric conversion unit (42) that converts incident light (L) into an electrical signal, and a stacked film group (43) provided on a light incident side of the photoelectric conversion unit (42). The stacked film group (43) is formed by stacking a plurality of stacked films (43a) formed by stacking thin films of different materials (M1, M2). An entire film thickness of the stacked film (43a) is smaller than a wavelength of the incident light (L).

SiGe photodiode for crosstalk reduction. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes. The plurality of pixels are configured to receive an incoming light through an illuminated surface of the semiconductor material. Each pixel includes a first photodiode comprising a silicon (Si) material; and a second photodiode having the Si material and a silicon germanium (SiGe) material.

An imaging element according to the present disclosure includes: a photoelectric conversion unit that is configured of a first electrode 21 and a photoelectric conversion layer 23A and a second electrode 22 including an organic material being laminated, an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A, and an inorganic oxide semiconductor material configuring the inorganic oxide semiconductor material layer 23B contains gallium (Ga) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms.

An image sensor includes a plurality of red pixel groups, a first red pixel and a second red pixel adjacent to each other in a first direction; a plurality of green pixel groups, a first green pixel and a second green pixel adjacent to each other in the first direction; a plurality of blue pixel groups, a first blue pixel and a second blue pixel adjacent to each other in the first direction; and at least one color pixel group including a first color pixel and a second color pixel each configured to sense a certain color, the first color pixel and the second color pixel adjacent to each other in a second direction, the at least one color pixel group being between the red pixel groups and the green pixel groups and between the green pixel groups and the blue pixel groups.

An imaging device includes: a first electrode; a charge storage electrode disposed at a distance from the first electrode; a photoelectric conversion layer in contact with the first electrode and above the charge storage electrode, with an insulating layer between the charge storage electrode and the photoelectric conversion layer; and a second electrode on the photoelectric conversion layer. The portion of the insulating layer between the charge storage electrode and the photoelectric conversion layer includes a first region and a second region, the first region is formed with a first insulating layer, the second region is formed with a second insulating layer, and the absolute value of the fixed charge of the material forming the second insulating layer is smaller than the absolute value of the fixed charge of the material forming the first insulating layer.

Provided are a multicolor photodetector and a method of fabricating the same through integration with a readout integrated circuit. The multicolor photodetector may be fabricated by providing an integrated circuit device in which a readout integrated circuit is wired; forming an assembly in which a first photodetection layer for detecting first wavelength light from incident light and a second photodetection layer for detecting second wavelength light from the incident light on the integrated circuit device; and electrically connecting the first photodetection layer and the second photodetection layer to the readout integrated circuit using connecting members.

The present disclosure pertains to an image sensor, including: a first photosensitive layer (2) for sensing blue light; a second photosensitive layer (3) for sensing green light; a third photosensitive layer (4) for sensing red light; and a fourth photosensitive layer (5) for sensing infrared light, wherein the first, second, third and fourth photosensitive layer are stacked on each other and each comprise a Perovskite material.

There is provided a solid-state imaging device including a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.