A night vision system and method for imaging an object at or near room temperature and in the wavelength region up to 2.5 microns is described. The includes a photodetector having a cut-off wavelength of 2.5 microns under the room temperature, an optical system configured for collecting light and focusing the collected light onto the photodetector, and a spectral filter located in an optical path of light propagating toward the photodetector. The spectral filter is configured and operable to selectively filter out light of wavelength shorter than a predetermined value, thereby gradually shifting operation of the night vision system from mostly reflection mode to a combined reflection and thermal mode, to allow the night vision system to detect light reflected from and emitted by the object being imaged.

A method of hybridizing an FPA having an IR component and a ROIC component and interconnects between the two components, includes the steps of: providing an IR detector array and a Si ROIC; depositing a dielectric layer on both the IR detector array and on the Si ROIC; patterning the dielectric on both components to create openings to expose contact areas on each of the IR detector array and the Si ROIC; depositing indium to fill the openings on both the IR detector array and the Si ROIC to create indium bumps, the indium bumps electrically connected to the contact areas of the IR detector array and the Si ROIC respectively, exposed on a top surface of the IR detector array and the Si ROIC; activating exposed dielectric layers on the IR detector array and the Si ROIC in a plasma; and closely contacting the indium bumps of the IR detector array and the Si ROIC by bonding together the exposed dielectric surfaces of the IR detector array and the Si ROIC. Another exemplary method provides a pillar support of the indium bumps on the IR detector array rather than a full dielectric layer support. Another exemplary method includes a surrounding dielectric edge support between the IR detector array and the Si ROIC with the pillar supports.

A method of hybridizing an FPA having an IR component and a ROIC component and interconnects between the two components, includes the steps of: providing an IR detector array and a Si ROIC; depositing a dielectric layer on both the IR detector array and on the Si ROIC; patterning the dielectric on both components to create openings to expose contact areas on each of the IR detector array and the Si ROIC; depositing indium to fill the openings on both the IR detector array and the Si ROIC to create indium bumps, the indium bumps electrically connected to the contact areas of the IR detector array and the Si ROIC respectively, exposed on a top surface of the IR detector array and the Si ROIC; activating exposed dielectric layers on the IR detector array and the Si ROIC in a plasma; and closely contacting the indium bumps of the IR detector array and the Si ROIC by bonding together the exposed dielectric surfaces of the IR detector array and the Si ROIC. Another exemplary method provides a pillar support of the indium bumps on the IR detector array rather than a full dielectric layer support. Another exemplary method includes a surrounding dielectric edge support between the IR detector array and the Si ROIC with the pillar supports.

The present invention relates to an image sensor sensor having improved spectral characteristics, and improves a color characteristic and sensitivity of an image sensor by implementing an image sensor sensor using a stacked substrate structure having photodiodes formed on each of two substrates, and generating a color signal having improved spectral characteristics based on an electrical signal outputted from each of the photodiodes formed on two substrates.

A monolithic multi-metallic thermal expansion stabilizer (MTES) has a coefficient of thermal expansion (CTE) differential between a first surface and a second surface, and a transition region extending between for mitigating the CTE differential.

A semiconductor element including: an element substrate provided with an element region at a middle part and a peripheral region outside the element region; and a readout circuit substrate facing the element substrate, in which the element substrate includes a first semiconductor layer provided in the element region and including a compound semiconductor material, a wiring layer provided between the first semiconductor layer and the readout circuit substrate, the wiring layer electrically coupling the first semiconductor layer and the readout circuit substrate to each other, a first passivation film provided between the wiring layer and the first semiconductor layer, and a second passivation film opposed to the first passivation film with the first semiconductor layer interposed therebetween, and in which the peripheral region of the element substrate includes a bonded surface with respect to the readout circuit substrate.

An infrared sensor including: a detection substrate that includes a first substrate in which infrared detection elements are arranged in a lattice shape and first terminals each of which is associated with one of the infrared detection elements are arranged; a readout substrate that includes a second substrate in which second terminals each of which is associated with one of the first terminals are arranged and a readout circuit that reads an electrical signal based on infrared light detected by each one of the infrared detection elements is formed; and bumps that electrically connect each one of the first terminals to one of the second terminals associated with the one of the first terminals, in which at least one of the first terminals, the second terminals, or the bumps is partially arranged at a position between the infrared detection elements that are adjacent in a top view.

A unit cell of a focal plane array (FPA) is provided. The unit cell includes a first layer having a first absorption coefficient. The first layer is configured to: sense a first portion of a polarized light of an incident light having a first portion and a second portion, convert the first sensed portion of incident light into a first electrical signal, and pass through a second portion of the incident light. Further, the unit cell includes a second layer having a second absorption coefficient and positioned adjacent to the first layer and configured to receive the second portion of the incident light. The second layer is configured to convert the second portion of the incident light to a second electrical signal. Also, the unit cell includes a readout integrated circuit positioned adjacent to the second layer and configured to receive the first electrical signal and the second electrical signal.

Monolithic pixel detectors, systems and methods for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution comprise a Si wafer with a CMOS processed pixel readout bonded to an absorber wafer in wafer bonds comprising conducting bonds between doped, highly conducting charge collectors in the readout and highly conducting regions in the absorber wafer and poorly conducting bonds between regions of high resistivity.

An imaging element according to an embodiment of the present disclosure includes a first semiconductor substrate, and a second semiconductor substrate stacked over the first semiconductor substrate with an insulating layer interposed therebetween. The first semiconductor substrate includes a photoelectric conversion section, and a charge-holding section that holds charges transferred from the photoelectric conversion section. The second semiconductor substrate includes an amplification transistor that generates a signal of a voltage corresponding to a level of charges held in the charge-holding section. The amplification transistor includes a channel region, a source region, and a drain region in a plane intersecting a front surface of the second semiconductor substrate, and includes a gate electrode being opposed to the channel region with a gate insulating film interposed therebetween and being electrically coupled to the charge-holding section.