An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors; an overlying oxide disposed on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of image sensors, where the second level is bonded to the first level, where the bonded includes an oxide to oxide bond; and a plurality of pixel control circuits, where each of the plurality of image sensors is directly connected to at least one of the plurality of pixel control circuits, and where the integrated device includes a plurality of memory circuits.

A method of forming an image sensor includes forming a first image sensor element within a substrate. The first image sensor element and the substrate respectively comprise a first material. A second image sensor element is formed within the substrate. Forming the second image sensor element includes forming an isolation layer over the first image sensor element. Further, a buffer layer is formed over the isolation layer and an active layer is formed over the buffer layer. The active layer comprises a second material different from the first material.

A distance measuring device (500) including a plurality of pixels (11a, 12a) provided in a row direction and a column direction, a plurality of AD conversion circuits (6, 7) provided in the row direction, each of the plurality of AD conversion circuits performing AD conversion on pixel signals of a corresponding column, and a signal processing section (92) that generates a depth image signal based on conversion results of the plurality of AD conversion circuits, wherein the plurality of pixels (11a, 12a) include a plurality of valid pixels (11a) provided in the row direction and the column direction to correspond to the depth image signal, each of the valid pixels including a plurality of charge transfer sections (TA, TB) that extract pixel signals corresponding to a light amount of incident light in different periods, and a plurality of light-shielded pixels (12a) provided in the column direction on at least one of two end sides in the row direction with respect to a region provided with the plurality of valid pixels (11a), each of the plurality of light-shielded pixels being covered with a light-shielding film (M).

Techniques are disclosed for optical imager devices, systems, and methods. In one example, an imaging system includes a focal plane array (FPA) and a light shield. The FPA includes a detector array configured to detect a first portion of electromagnetic radiation and generate a detector signal based on the first portion. The FPA further includes a readout circuit coupled to the detector array and configured to receive the detector signal. The light shield is coupled to the FPA and configured to block a second portion of the electromagnetic radiation. Related devices and methods are also provided.

The present technology relates to a light receiving element, a manufacturing method of same, and an electronic device that enables enhancement of quantum efficiency with respect to infrared light and an improvement in sensitivity. The light receiving element includes a pixel array region in which pixels including photoelectric conversion regions are aligned in a matrix shape, and the photoelectric conversion region of each pixel on a first semiconductor substrate, on which the pixel array region is formed, is formed of an SiGe region or a Ge region. The present technology can be applied to, for example, a distance measurement module for measuring a distance to an object, and the like.

A unit cell of a focal plane array (FPA) is provided. The unit cell includes a first layer having a first absorption coefficient. The first layer is configured to: sense a first portion of a polarized light of an incident light having a first portion and a second portion, convert the first sensed portion of incident light into a first electrical signal, and pass through a second portion of the incident light. Further, the unit cell includes a second layer having a second absorption coefficient and positioned adjacent to the first layer and configured to receive the second portion of the incident light. The second layer is configured to convert the second portion of the incident light to a second electrical signal. Also, the unit cell includes a readout integrated circuit positioned adjacent to the second layer and configured to receive the first electrical signal and the second electrical signal.

This infrared imaging element includes: a substrate which has a front surface and a back surface and to which a circuit unit is provided; a support leg wiring line that is disposed above the front surface of the substrate; and an infrared-ray detection unit which is held on the support leg wiring line and to which a diode electrically connected to the circuit unit via the support leg wiring line is provided, wherein the temperature change of the infrared-ray detection unit is detected as an electrical signal change of the diode by the circuit unit. The substrate, the support leg wiring line, and the infrared-ray detection unit are laminated at intervals in a direction perpendicular to the front surface of the substrate.

A semiconductor arrangement is provided. The semiconductor arrangement includes a first component in a substrate. The semiconductor arrangement includes a gap fill layer. A first portion of the gap fill layer overlies the first component. The first portion of the gap fill layer has a tapered sidewall. A first portion of the substrate separates the first portion of the gap fill layer from the first component.

A process for fabricating a hybrid optical detector, includes the steps of: assembling, via an assembly layer, on the one hand an absorbing structure and on the other hand a read-out circuit, locally etching, through the absorbing structure, the assembly layer and the read-out circuit up to the contacts, so as to form electrical via-holes, depositing a protective layer on the walls of the via-holes, producing a doped region of a second doping type different from the first doping type by diffusing a dopant into the absorbing structure through the protective layer, the region extending annularly around the via-holes so as to form a diode, depositing a metallization layer on the walls of the via-holes allowing the doped region to be electrically connected to the contact.

An optical detector that is sensitive in at least two infrared wavelength ranges: first spectral band and second spectral band; and having a set of pixels, comprising: an absorbent structure disposed on a lower face of a substrate and comprising a stack of at least one absorbent layer made of semi-conductor material; the detector further comprising a plurality of dielectric resonators on the upper surface of said substrate forming an upper surface metasurface, the metasurface configured to diffuse, deflect and focus in the pixels of the detector in a resonant manner, when illuminated by the incident light, a first beam having at least one first wavelength included in the first spectral band and a second beam having at least one second wavelength included in the second band, the metasurface also being configured so that said first and second beams are focused on different pixels of the detector.