A dual band photodetector includes a first band absorber layer is configured to absorb incident light in a first wavelength spectral band and a second band absorber layer configured to absorb incident light in a second wavelength spectral band. The dual band photodetector further includes an electron-photon blocking (EPB) layer located between the respective layers and includes at least one high band gap layer and at least one intervening layer. The difference in refractive index between the at least one high band gap layer and the at least one intervening layer form a distributed brag reflector (DBR) designed to reflect wavelengths corresponding with radiative recombination photons emitted from at least the first absorber layer to reduce optical crosstalk between the first band absorber layer and the second band absorber layer.

Multicolor, stacked detector devices, focal plane arrays including multicolor, stacked detector devices, and methods of fabricating the same are disclosed. In one embodiment, a stacked multicolor detector device includes a first detector and a second detector. The first detector includes a first detector structure and a first ground plane adjacent the first detector structure. The second detector includes a second detector structure and a second ground plane adjacent the second detector structure. At least one of the first ground plane and the second ground plane is transmissive to radiation in a predetermined spectral band. The first detector and the second detector are in a stacked relationship.

An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors; an overlying oxide disposed on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of semiconductor devices; a third level overlaying the second level, where the third level includes a plurality of image sensors, where the first level includes a plurality of landing pads, where the second level is bonded to the first level, where the bonded includes an oxide to oxide bond; and an isolation layer disposed between the second mono-crystal layer and the third level.

An apparatus is provided for nanoantenna-enhanced detection of infrared radiation. The apparatus includes one or more detector pixels. A plurality of detector pixels can constitute a focal plane array (FPA). Each detector pixel carries at least a first and a second subpattern of nanoantenna elements, with elements of the second subpattern interpolated between elements of the first subpattern. Each detector pixel also includes separate collection electrodes for collecting photogenerated current from the respective subpatterns.

A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.

The embodiments disclosed in the present document relate to an image sensor for detecting infrared multi-band light, and an electronic device using same. The image sensor according to the various embodiments of the present invention may comprise: a first filter configured to allow light in the infrared band to pass; a pixel array comprising a first pixel configured to be able to at least detect light of a first band which corresponds to part of the light in the infrared band that passed through the first filter, and a second pixel configured to be able to at least detect light of a second band which corresponds to another part of the light in the infrared band that passed through the first filter; and a second filter provided on top of the first pixel, for lowering electrical reactivity of the first pixel towards light in a band other than the first band.

A pixel array including an Si.sub.xGe.sub.y layer disposed on a first semiconductor layer. A plurality of pixels is disposed in the first semiconductor layer. The plurality of pixels includes: (1) a first portion of pixels separated from the Si.sub.xGe.sub.y layer by a spacer region and (2) a second portion of pixels including a first doped region in contact with the Si.sub.xGe.sub.y layer. The pixel array also includes pinning wells disposed between individual pixels in the plurality of pixels. A first portion of the pinning wells extend through the first semiconductor layer. A second portion of the pinning wells extend through the first semiconductor layer and the Si.sub.xGe.sub.y layer.

The present application provides an electrostatic discharge guard structure for photonic platform based photodiode systems. In particular this application provides a photodiode assembly comprising: a photodiode (such as a Si or SiGe photodiode); a waveguide (such as a silicon waveguide); and a guard structure, wherein the guard structure comprises a diode, extends about all or substantially all of the periphery of the Si or SiGe photodiode and allows propagation of light from the silicon waveguide into the Si or SiGe photodiode.

An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors; an overlaying oxide on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of semiconductor devices; a third level overlaying the second level, where the third level includes a plurality of image sensors, where the second level is bonded to the first level, where the bonded includes an oxide to oxide bond; and an isolation layer disposed between the second mono-crystal layer and the third level.

A night vision system and method for imaging an object at or near room temperature and in the wavelength region up to 2.5 microns is described. The includes a photodetector having a cut-off wavelength of 2.5 microns under the room temperature, an optical system configured for collecting light and focusing the collected light onto the photodetector, and a spectral filter located in an optical path of light propagating toward the photodetector. The spectral filter is configured and operable to selectively filter out light of wavelength shorter than a predetermined value, thereby gradually shifting operation of the night vision system from mostly reflection mode to a combined reflection and thermal mode, to allow the night vision system to detect light reflected from and emitted by the object being imaged.