Disclosed herein is a method, comprising: forming a radiation absorption layer comprising a layer of SiC on a semiconductor substrate; forming a first electric contacts on a first surface of the radiation absorption layer; bonding the radiation absorption layer with an electronics layer; removing the semiconductor substrate; forming a second electric contacts on a second surface of the radiation absorption layer distal from the electronics layer.

An electronic apparatus and a fingerprint sensing module suitable for being arranged below a display panel and including an image sensor disposed below the display panel, microlens array disposed between the image sensor and the display panel and including microlenses arranged in an array, and an ambient light blocking filter disposed between the image sensor and the microlens array and having light channels are provided. Each light channel is surrounded and formed by a light shielding body. Light beams from the microlenses are respectively transmitted to the image sensor through the light channels. The microlens array images a fingerprint of a finger contacting an upper surface of the display panel onto the image sensor, but does not image an electrode structure in the display panel onto the image sensor. The fingerprint sensing module can produce high-contrast fingerprint images and suppress moiré interference, and is less affected by ambient light.

Disclosed herein is a method comprising: forming a doped region of a semiconductor substrate by doping a surface of the semiconductor substrate with dopants; driving the dopants into the semiconductor substrate by annealing the semiconductor substrate; controlling doping profile of the doped region by repeating doping and annealing the semiconductor substrate; forming a first electrode on the semiconductor substrate, wherein the first electrode is in electrical contact with the doped region; forming an outer electrode arranged around the first electrode, wherein the outer electrode is electrically insulated from the first electrode.

An apparatus, system and method suitable for detecting X-ray are disclosed. In one example, the apparatus comprises: an X-ray absorption layer and a mask; wherein the mask comprises a first window and a second window, and a portion between the first window and the second window; wherein the first and second windows are not opaque to an incident X-ray; wherein the portion is opaque to the incident X-ray; and wherein the first and second windows are arranged such that charge carriers generated in the X-ray absorption layer by an X-ray photon propagating through the first window and charge carriers generated in the X-ray absorption layer by an X-ray photon propagating through the second window do not spatially overlap.

A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation. A non-radiation influenced threshold voltage shift may be measured and used in determining whether each logical pair of exposed sensor cells is influenced by radiation exposure.

Disclosed herein is an apparatus suitable for radiation detection. The apparatus may comprise a radiation absorption layer and a first electrode on the radiation absorption layer. The radiation absorption layer may be configured to generate charge carriers therein from a radiation particle absorbed by the radiation absorption layer. The first electrode may be configured to generate an electric field in the radiation absorption layer. The first electrode may have a geometry shaping the electric field so that the electric field in an amplification region of the radiation absorption layer has a field strength sufficient to cause an avalanche of the charge carriers in the amplification region.

Monolithic pixel detectors, systems and methods for the detection and imaging of radiation in the form of energetic particles which may have a mass or be massless (such as X-ray photons) comprise a Si wafer with a CMOS processed readout communicating via implants for charge collection with an absorber forming a monolithic unit with the Si wafer to collect and process the electrical signals generated by radiation incident on the absorber. The pixel detectors, systems and methods are used in various medical, industrial and scientific types of applications.

An X-ray imaging device, including: a transfer substrate including electric connection elements; an array of pixels, each including a monolithic elementary chip bonded and electrically connected to elements of electric connection of the transfer substrate, and a direct conversion X photon detector electrically connected to the elementary chip, wherein, in each pixel, the elementary chip includes an integrated circuit for reading from the detector of the pixel.

A photoelectric detection circuit and a driving method therefor, and a detection substrate and a ray detector. The photoelectric detection circuit includes a storage circuit (101), an amplification circuit (102), a first reading circuit (103) and a second reading circuit (104), where the storage circuit (101), the amplification circuit (102) and the first reading circuit (103) cooperate with one another to realize a photoelectric detection function in an active mode; and the storage circuit (101) and the second reading circuit (104) cooperate with each other to realize a photoelectric detection function in a passive mode.

The present invention is directed towards a moisture resistant radiation detector core assembly which was constructed by first assembling the photon-electron conversion layer, integrated circuit and the connection elements between and then encapsulating the whole assembly. This provides improved moisture barrier properties, since the encapsulation also covers the connection elements and does not have to be opened to apply the electrical connections, as is done for known radiation detector core assemblies.