Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.

Disclosed herein is a method of recovering performance of a radiation detector, the radiation detector comprising: a radiation absorption layer configured to absorb radiation particles incident thereon and generate an electrical signal based on the radiation particles; an electronic system configured to process the electrical signal, the electronic system comprising a transistor, the transistor comprising a gate insulator with positive charge carriers accumulated therein due to exposure of the gate insulator to radiation; the method comprising: removing the positive charge carriers from the gate insulator by establishing an electric field across the gate insulator.

A high pixel density intraoral x-ray imaging sensor includes a direct conversion, fully depleted silicon detector bump bonded to a readout CMOS substrate by cu-pillar bump bonds.

Disclosed herein is an apparatus suitable for detecting X-ray, the apparatus comprising: a first substrate comprising a plurality of first electric contacts; a first chip layer comprising a plurality of first chips, wherein each of the first chips comprises a first electrode and is bonded to the first substrate such that the first electrode is electrically connected to at least one of the first electrical contacts; a second substrate comprising a plurality of second electric contacts; and a second chip layer comprising a plurality of second chips, wherein each of the second chips comprises a second electrode and is bonded to the second substrate such that the second electrode is electrically connected to at least one of the second electrical contacts, wherein the first chip layer and the second chip layer are bonded to each other such that at least two second chips are bonded to a same first chip.

An image sensor includes a first semiconductor chip including first and second surfaces; a second semiconductor chip including first and second surfaces; and a first adhesive layer between the second surface of the first semiconductor chip and the second surface of the second semiconductor chip, the first semiconductor chip being stacked on the second semiconductor chip via the first adhesive layer such that a footprint of the first semiconductor chip is larger than a footprint of the second semiconductor chip with respect to a plan view of the image sensor, the first semiconductor chip including an array of unit pixels configured to capture light corresponding to an image and to generate image signals based on the captured light, the second semiconductor chip including first peripheral circuits configured to control the array of unit pixels and receive the generated image signals.

A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

An apparatus for detecting X-ray, comprising an X-ray absorption layer comprising an electrode, an electronics layer and a wall sealing a space among electrical connections between the X-ray absorption layer and the electronics layer. The electronics layer comprises: a first and second voltage comparators configured to compare a voltage of an electrode to a first and second thresholds respectively; a counter configured to register a number of X-ray photons absorbed by the X-ray absorption layer; and a controller configured to: start a time delay from a time at which an absolute value of the voltage equals or exceeds an absolute value of the first threshold; activate the second voltage comparator during the time delay; cause the number registered by the counter to increase by one, if, during the time delay, an absolute value of the voltage equals or exceeds an absolute value of the second threshold.

According to an embodiment, a device comprises: a scintillator layer configured to convert x-ray or gamma ray photons into photons of visible light; a photodiode layer configured to convert visible light produced by the scintillator layer into an electric current; an integrated circuit, IC, layer situated below the photodiode layer and configured to receive and process the electric current; wherein electrical contacts of the IC layer are connected to electrical contacts of the photodiode layer using wire-bonding; and wherein the wire-bonding is covered with a protective material while bottom part of the IC layer is left at least partly exposed. Other embodiments relate to a detector comprising an array of tiles according to the device; and an imaging system comprising: an x-ray source and the detector.

An image sensor array formed on a flexible first substrate is supported by a flexible second substrate attached thereto. The second substrate has a top surface with an adhesive thereon for attaching the substrates together. The adhesive is on a portion of the second substrate directly beneath the image sensor array to allow selective formation of the second substrate.

Provided are an X-ray detector including a plurality of pixel driving micro integrated chips separately fabricated from a photodiode layer and printed on the photodiode layer and a method for manufacturing the X-ray detector. The X-ray detector may include a photodiode layer and a driver layer. The photodiode layer may include a plurality of photodiodes and be configured to receive X-ray that have passed through a target object and convert the received X-ray to electric signals. The driver layer may be formed on the photodiode layer and include a plurality of micro driving integrated chips each coupled to two or more photodiodes in the photodiode layer. The plurality of pixel driving integrated chips may be manufactured separately from the photodiode layer and printed on the photodiode layer using a micro-transfer printing method.