A technique capable of improving a performance of a semiconductor detector is provided. The semiconductor detector is made based on injection of an underfill into a gap between a first semiconductor chip and a second semiconductor chip in a flip-chip connection state, but the underfill is not formed in periphery of a connection structure connecting a reading electrode pad and a gate terminal through a bump electrode.

Monolithic pixel detectors, systems and methods for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution comprise a Si wafer with a CMOS processed pixel readout bonded to an absorber wafer in wafer bonds comprising conducting bonds between doped, highly conducting charge collectors in the readout and highly conducting regions in the absorber wafer and poorly conducting bonds between regions of high resistivity.

A method of manufacturing a radiation imaging apparatus includes electrically connecting a first surface of a flexible insulating layer to a conductive portion of a circuit substrate, covering an exposed portion of the conductive portion with a protection layer, and separating the flexible insulating layer from a substrate in contact with a second surface of the flexible insulating layer. The circuit substrate includes an integrated circuit mounted on the circuit substrate. The flexible insulating layer includes, on the first surface, a plurality of pixels arranged in a two-dimensional matrix to convert radiation into an electrical signal. The second surface of the flexible insulating layer is opposite to the first surface of the flexible insulating layer. The flexible insulating layer is separated from the substrate by irradiating the second surface with light transmitting through the substrate.

According to an embodiment, a device comprises: a scintillator layer configured to convert x-ray or gamma ray photons into photons of visible light; a photodiode layer configured to convert visible light produced by the scintillator layer into an electric current; an integrated circuit, IC, layer situated below the photodiode layer and configured to receive and process the electric current; wherein electrical contacts of the IC layer are connected to electrical contacts of the photodiode layer using wire-bonding; and wherein the wire-bonding is covered with a protective material while bottom part of the IC layer is left at least partly exposed. Other embodiments relate to a detector comprising an array of tiles according to the device; and an imaging system comprising: an x-ray source and the detector.

Disclosed herein is a method for making an apparatus suitable for detecting X-ray, the method comprising: obtaining a wafer and a substrate; wherein the substrate comprises an X-ray absorption layer comprising a first plurality of electrical contacts; wherein the wafer has multiple dies and comprises an electronic layer comprising a second plurality of electrical contacts and an electronic system configured to process or interpret signals generated by X-ray photons incident on the X-ray absorption layer; aligning the first plurality of electrical contacts to the second plurality of electrical contacts; mounting the wafer to the substrate such that the first plurality of electrical contacts are electrically connected to the second plurality of electrical contacts; wherein the substrate further comprises a transmission line electrically bridging at least some of the dies; wherein the second plurality of electrical contacts are configured to feed the signals to the electronic system.

The present invention relates to a photon counting detector comprising a plurality of detector tiles. Each detector tile comprises a sensor material layer (20), an integrated circuit (30), an input/output connection or flex (50), a high voltage electrode or foil (60), and an anti scatter grid (10). The input/output connection or flex is connected to the integrated circuit. The integrated circuit is configured to readout signals from the sensor material layer. The anti scatter grid is positioned adjacent to a surface of the sensor material layer. The high voltage electrode or foil extends across the surface of the sensor material layer and is configured to provide a bias voltage to the surface of the sensor material layer. The high voltage electrode or foil comprises at least one tail section (70). Relating to the photon counting detector and the plurality of detector tiles, the high voltage electrode or foil of a first detector tile is configured to make an electrical connection with the high voltage electrode or foil of an adjacent detector tile via one or more tail sections of the at least one tail section of the first detector tile and/or via one or more tail sections of the at least one tail section of the adjacent detector tile.

A radiation scanning system comprises a radiation detection sub-assembly, and a routing sub-assembly coupled to the radiation detection sub-assembly. The radiation detection sub-assembly comprises a first substrate electrically connected to the radiation detection sub-assembly, and a second substrate electrically connected to the first substrate. The radiation scanning system further comprises one or more radiation shields between the first substrate and the second substrate, and one or more semiconductor dice electrically connected to the second substrate on a side of the second substrate opposite the first substrate. Related radiation detector arrays radiation scanning systems are also disclosed.

Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.

A radiation sensor element comprises a support plate, having a front face, extending substantially along a base plane, defining a lateral extension of the radiation sensor element; a substrate, having a basal face, an interconnection face opposite the basal face, and an edge face connecting the basal face and the interconnection face; a sensor tile, having a back face facing the interconnection face; a copper-pillar interconnection element between the interconnection face and the back face; and a non-conductive film extending between the interconnection face and the back face. The front face comprises, laterally beyond the edge face, a depression extending in a thickness direction perpendicular to the base plane, and the non-conductive film comprises an edge protrusion part extending in the depression.

An apparatus for detecting X-ray, comprising an X-ray absorption layer comprising an electrode, an electronics layer and a wall sealing a space among electrical connections between the X-ray absorption layer and the electronics layer. The electronics layer comprises: a first and second voltage comparators configured to compare a voltage of an electrode to a first and second thresholds respectively; a counter configured to register a number of X-ray photons absorbed by the X-ray absorption layer; and a controller configured to: start a time delay from a time at which an absolute value of the voltage equals or exceeds an absolute value of the first threshold; activate the second voltage comparator during the time delay; cause the number registered by the counter to increase by one, if, during the time delay, an absolute value of the voltage equals or exceeds an absolute value of the second threshold.