A photoelectric conversion device includes a photoelectric conversion unit that generates signal charge of a first polarity and a charge conversion circuit that converts the signal charge into a signal voltage. The photoelectric conversion unit includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type that are provided in a surface side of a semiconductor substrate, a third semiconductor region of the first conductivity type provided at a first depth, a fourth semiconductor region of the second conductivity type provided at a second depth and overlaps the second semiconductor region in a plan view, and a fifth semiconductor region of the first conductivity type provided at a third depth, and the third semiconductor region and the fifth semiconductor region overlap the first semiconductor region, the second semiconductor region, and the fourth semiconductor region in the plan view.

A PET detector and method thereof are provided. The PET detector may include: a crystal array including a plurality of crystal elements arranged in an array and light-splitting structures set on surfaces of the plurality of crystal elements, the light-splitting structures jointly define a light output surface of the crystal array; a semiconductor sensor array, which is set in opposite to the light output surface of the crystal array and is suitable to receive photons from the light output surface, the semiconductor sensor array comprises a plurality of semiconductor sensors arranged in an array.

A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a base substrate; a thin film transistor on the base substrate; an insulating layer on a side of the thin film transistor away from the base substrate; a photosensor on a side of the insulating layer away from the base substrate; a passivation layer on a side of the photosensor away from the base substrate; a scintillation layer on a side of the passivation layer away from the base substrate; and a reflective layer on a side of the scintillation layer away from the base substrate. The photosensor includes a first polarity layer in direct contact with the passivation layer. All sides of the first polarity layer other than a side internal to the photosensor are entirely in direct contact with the passivation layer.

The present disclosure provides a detection substrate, a manufacturing method thereof and a ray detector. The detection substrate includes: a base substrate; a plurality of independent first electrodes arranged on the base substrate on the same layer; a photoelectric conversion layer arranged on a whole face of sides, facing away from the base substrate, of the plurality of first electrodes; a ray absorption layer arranged on a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer, wherein an orthographic projection of the ray absorption layer on the base substrate is overlapped with an orthographic projection of gaps between the first electrodes on the base substrate; and a second electrode arranged on a whole face of a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer.

A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; and a first inorganic insulating film formed so as to cover at least a part of the first organic film, wherein the first inorganic insulating film has a through hole that exposes a part of the first organic film.

An X-ray detection device includes a substrate, a first transistor disposed on the substrate and including a silicon semiconductor, a second transistor disposed on the substrate and including a metal oxide semiconductor, a sensor disposed on the first transistor and the second transistor and electrically connected to the first transistor and the second transistor, a first barrier layer disposed between the first transistor and the second transistor, and a second barrier layer disposed between the second transistor and the sensor. The X-ray detection device may further include a scintillator disposed on the sensor.

A photodetection device includes a substrate and a plurality of pixel units. The plurality of pixel units includes a pixel unit including a first photodetector in an active area, and a pixel unit including a second photodetector in an inactive area. The first photodetector includes a first lower electrode layer, a first lower extrinsic semiconductor layer, a first intrinsic semiconductor layer, a first upper extrinsic semiconductor layer, and a first upper electrode layer. The second photodetector includes a second lower electrode layer, a second lower extrinsic semiconductor layer, a second intrinsic semiconductor layer, a second upper extrinsic semiconductor layer, and a second upper electrode layer. The second lower electrode layer is covered with the second lower extrinsic semiconductor layer and the second intrinsic semiconductor layer.

According to an aspect, an active matrix substrate of an X-ray imaging panel includes: an active matrix substrate having a pixel region including a plurality of pixels; and a scintillator that converts X-rays projected onto the X-ray imaging panel to scintillation light. The plurality of pixels include respective photoelectric conversion elements. The active matrix substrate further includes a first planarizing film that covers the photoelectric conversion elements, is formed from an organic resin film, and has a plurality of first contact holes and a first wiring line that is formed in the first contact holes and in a layer upper than the first planarizing film and connected to the photoelectric conversion elements within the first contact holes.

A photoelectric conversion panel includes multiple thin-film transistors (TFTs), multiple photodiodes respectively connected the TFTs, a bias line, and a light shielding layer that is formed in a position overlapping at least one of the photodiodes in a plan view. One of the TFTs connected to a photodiode includes an electrically conductive region that connects a drain electrode of the TFT to a source electrode of the TFT.

There is set forth herein, in one example, a device comprising: a detector surface; an array of sensing photodiodes formed in a semiconductor formation, wherein the semiconductor formation receives light from the detector surface; and a light separating structure intermediate the detector surface and a sensing photodiode of the array of sensing photodiodes.