A semiconductor device with C-shaped channel portion and an electronic apparatus including the semiconductor device are disclosed. According to the embodiments, the semiconductor device may include a first semiconductor element and a second semiconductor element adjacent in a first direction. The first semiconductor element and the second semiconductor element may respectively include: a channel portion on a substrate, the channel portion including a curved nano-sheet or nano-wire with a C-shaped section; source/drain portions at upper and lower ends of the channel portion with respect to the substrate, respectively; and a gate stack surrounding a periphery of the channel portion. The channel portion of the first semiconductor element and the channel portion of the second semiconductor element may be substantially coplanar.

A vertical field effect transistor structure having at least two vertically oriented fins extending from a substrate. The vertical field effect transistor structure further includes a first source/drain region disposed in the substrate between the two vertically oriented fins and under each of the fins. The outer ends of the first source/drain region are in contact with outer ends of the fins. A portion of the first source/drain region extends beyond the fins.

A semiconductor apparatus including a capacitor and a method of manufacturing the same, and an electronic device including the semiconductor apparatus are provided. According to embodiments, the semiconductor apparatus may include: a vertical semiconductor device including an active region extending vertically on a substrate; and a capacitor including a first capacitor electrode, a capacitor dielectric layer and a second capacitor electrode sequentially stacked. The first capacitor electrode extends vertically on the substrate and includes a conductive material, and the conductive material includes at least one semiconductor element contained in the active region of the vertical semiconductor device.

The semiconductor device includes a first source/drain layer, a dielectric layer, a channel, a gate electrode, a first gate dielectric layer, a seed layer, a conductive layer, and a second source/drain layer. The dielectric layer is disposed on the first source/drain layer, in which the dielectric layer has a hole penetrating the dielectric layer. The channel is disposed in the hole and extends substantially perpendicular to an upper surface of the first source/drain layer. The gate electrode surrounds the channel. The first gate dielectric layer is disposed between the gate electrode and the channel. The seed layer is disposed between the gate electrode and the dielectric layer and on an upper surface of the dielectric layer, in which the seed layer covers a portion of a sidewall of the hole.

A semiconductor structure comprises at least one vertical fin, an epitaxial layer adjacent a bottom portion of the at least one vertical fin, wherein the epitaxial layer comprises a plurality of different heights, and a contact structure disposed on the epitaxial layer. The contact structure is disposed on respective surfaces of the epitaxial layer at the plurality of different heights. The epitaxial layer comprises a bottom source/drain region of at least one vertical transport field-effect transistor.

Sensors having an advantageous design and methods for fabricating such sensors are generally provided. Some sensors described herein comprise pairs of electrodes having radial symmetry, pairs of nested electrodes, and/or nanowires. Some embodiments relate to fabricating electrodes by methods in which nanowires are deposited from a fluid contacted with a substrate in a manner such that it evaporates and is replenished.

Techniques are provided herein to form semiconductor devices having a different number of semiconductor nanoribbons compared to other semiconductor devices on the same substrate. In one example, two different semiconductor devices of a given memory cell, such as a random access memory (RAM) cell, include a p-channel device and an n-channel device. More specifically, the p-channel device may be a GAA transistor with a first number of semiconductor nanoribbons while the n-channel device may be a GAA transistor with a second number of semiconductor nanoribbons that is greater than the first number of semiconductor nanoribbons. In some cases, the n-channel device(s) have one additional semiconductor nanoribbon compared to the p-channel device(s). Depending on when the nanoribbons are removed during the fabrication process, different structural outcomes will occur that can be detected in the final device.

A semiconductor device is provided. The semiconductor device includes a substrate and a semiconductor layer formed over a substrate. The semiconductor device further includes an isolation region covering the semiconductor layer and nanostructures formed over the semiconductor layer. The semiconductor layer further includes a gate stack wrapping around the nanostructures. In addition, the isolation region is interposed between the semiconductor layer and the gate stack.

Methods for manufacturing semiconductor structures are provided. The method for manufacturing the semiconductor structure includes forming a fin structure protruding from a substrate and forming a source/drain structure over the fin structure. The method for manufacturing a semiconductor structure further includes forming a metallic layer over the source/drain structure and forming an oxide film on a sidewall of the source/drain structure. In addition, the oxide film and the metallic layer are both in direct contact with the source/drain structure.

A method for manufacturing a semiconductor device includes forming a first vertical transistor on a semiconductor substrate, and forming a second vertical transistor stacked on the first vertical transistor. In the method, a silicide layer is formed on a first drain region of the first vertical transistor and on a second drain region of the second vertical transistor. The silicide layer electrically connects the first and second drain regions to each other.