A method for forming a drift region of a superjunction device includes forming a drift region section having a semiconductor layer with first regions of a first doping type and second regions of a second doping type arranged alternatingly in a first lateral direction. Forming the drift region section includes: forming an implantation mask on top of a first surface of the semiconductor layer and including first openings; in a first implantation process, implanting dopant atoms of the first doping type through the first openings into the first surface; increasing a size of the first openings to obtain second openings; in a second implantation process, implanting dopant atoms of the second doping type through the second openings into the first surface; and after removing the mask, in a third implantation process, implanting dopant atoms of the first doping type into the first surface.

A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

Provided are a Schottky diode and a manufacturing method therefor. The Schottky diode (100) includes a nitride channel layer (1); a nitride barrier layer (2) formed on the nitride channel layer (1); a nitride cap layer (3) formed on the nitride barrier layer (2), wherein the nitride cap layer (3) includes an active region (31) and an inactive region (32); a passivation layer (4) formed on the nitride cap layer (3), where the passivation layer (4) includes a first groove penetrating through the passivation layer (4) to expose the nitride cap layer (3), and the first groove corresponds to the active region (31); a dielectric layer (5) located on the passivation layer (4) and an inner wall of the first groove, wherein the dielectric layer (5) forms a second groove, and the dielectric layer (5) includes a third groove penetrating through the dielectric layer (5) to expose a part of the active region (31) of the nitride cap layer (3); and an anode layer (6) formed in the second groove and the third groove and in contact with the active region (31).

A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device comprises an active cell area including a plurality of superjunction trench power MOSFETs, and a Schottky diode area including a plurality of Schottky diodes formed in the drift region having the superjunction structure. Each of the integrated Schottky diodes includes a Schottky contact between a lightly doped semiconductor layer and a metallic layer.

A switching circuit forming a bidirectional switch between a first node and a second node and resting on a substrate, the circuit comprising°: a first branch with a first diode in series with a first heterojunction field-effect transistor, a second branch with a second heterojunction field-effect transistor in series with a second diode, the first branch and the second branch being mounted in parallel to one another and so that the first diode and the second diode are arranged in antiparallel or in anti-series with respect to one another, the first transistor, the second transistor being each provided with a control gate facing a heterojunction band forming an active zone in which an electron gas is capable of being formed, the first diode being a Schottky diode with a metal electrode in contact with the heterojunction band, the second diode being a Schottky diode with a metal electrode in contact with the heterojunction band, the first diode, the first transistor, the second diode, the second transistor sharing the same active zone (FIG. 5).

A method includes forming first and second trenches in a semiconductor substrate. The method further includes filling the first and second trenches with polysilicon. The polysilicon is oppositely doped from the semiconductor substrate. A Schottky contact is formed on the semiconductor substrate between the first and second trenches. The method also includes forming an anode for the Schottky contact. The anode is coupled to the polysilicon in the first and second trenches.

A semiconductor Schottky rectifier built in an epitaxial semiconductor layer over a substrate has an anode structure and a cathode structure extending from the surface of the epitaxial layer. The cathode contact structure has a trench structure near the epi-layer and a vertical sidewall surface covered with a gate oxide layer. The cathode structure further comprises a polysilicon element adjacent to the gate oxide layer.

A Schottky barrier diode according to the present disclosure includes an n-type semiconductor substrate, one or more p-type guard rings provided on a side of an upper surface of the semiconductor substrate, an anode electrode provided on the upper surface of the semiconductor substrate, a cathode electrode provided on a rear surface of the semiconductor substrate and an insulating film provided on an inner guard ring on an innermost side among the one or more guard rings, wherein the anode electrode rides on the insulating film and has its end portion provided just above the inner guard ring, the anode electrode and the inner guard ring are provided away from each other, and a thickness of the insulating film is 1.0 μm or more.

A semiconductor device includes: a semiconductor film including a Schottky junction region and an Ohmic junction region; a Schottky electrode arranged on the Schottky junction region; and an Ohmic electrode arranged on the Ohmic junction region, the Schottky junction region having a first dislocation density, the Ohmic junction region having a second dislocation region, and the first dislocation density being smaller than the second dislocation density.

A junction barrier Schottky diode device and a method for fabricating the same is disclosed. In the junction barrier Schottky device includes an N-type semiconductor layer, a plurality of first P-type doped areas, a plurality of second P-type doped areas, and a conductive metal layer. The first P-type doped areas and the second P-type doped are formed in the N-type semiconductor layer. The second P-type doped areas are self-alignedly formed above the first P-type doped areas. The spacing between every neighboring two of the second P-type doped areas is larger than the spacing between every neighboring two of the first P-type doped areas. The conductive metal layer, formed on the N-type semiconductor layer, covers the first P-type doped areas and the second P-type doped areas.