A Schottky barrier diode provided herein includes: a semiconductor substrate; and an anode electrode being in contact with the semiconductor substrate. The semiconductor substrate includes: p-type contact regions being in contact with the anode electrode; and an n-type drift region being in contact with the anode electrode by Schottky contact in a range where the p-type contact regions are not provided The p-type contact regions includes: a plurality of circular regions located so that the circular regions are arranged at intervals between an outer side and an inner side at a contact surface between the semiconductor substrate and the anode electrode; and an internal region located in an inner portion of the circular region located on an innermost side at the contact surface and connected to the circular region located on the innermost side at the contact surface.

The embodiments of the invention provides a semiconductor device and a method for manufacturing it The semiconductor device provided by the embodiments of the invention comprises: a first electrode layer; a substrate layer positioned on the first electrode layer; an epitaxy layer positioned on the substrate layer and comprising a first surface far from the substrate layer; a plurality of well regions disposed by extending from the first surface into the epitaxy layer and orthographic projections thereof on the first surface are spaced from each other; a second electrode layer, comprising first metal layers, each disposed between adjacent two of the well regions on the first surface and forms a Schottky contact with the epitaxy layer, wherein the Schottky contact has variable barrier height. The semiconductor device provided by the embodiments of the invention may improve the forward conduction ability without affecting the reverse blocking ability.

Disclosed is a rectification device, a method for manufacturing the same and an ESD protection device. The rectification device comprises: a semiconductor substrate with a doping type of P-type; an epitaxial semiconductor layer with a doping type of N-type and located on the semiconductor substrate; a first doped region with a doping type of N-type and located in the epitaxial semiconductor layer; wherein the semiconductor substrate and the epitaxial semiconductor layer are respectively used as an anode and a cathode of the rectification device, and the rectification device further comprises a reverse PN junction or a reverse Schottky barrier being formed in the cathode. According to the disclosure, a reverse biased PN junction or a reverse Schottky barrier is formed to reduce the parasitic capacitance of the diode at high voltages, thereby increasing the response speed of the ESD protection device at high voltages.

A P.sup.+ type region, a p-type region, and a P.sup.− type region are disposed in a surface layer of a silicon carbide substrate base and are disposed in a breakdown voltage structure portion surrounding an active region to make up an element structure of Schottky junction. The p.sup.− type region surrounds the P.sup.+ type region and the p-type region to form a junction termination structure. A Schottky electrode forms a Schottky junction with an n-type silicon carbide epitaxial layer. The Schottky electrode and an electrode pad have end portions positioned on the P.sup.+ type region and the end portion of the Schottky electrode is exposed from the end portion of the electrode pad. As a result, the region of the breakdown voltage structure portion can be made smaller while the active region can be made larger, and a semiconductor device is easily fabricated.

A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm. A method for manufacturing a semiconductor device according to the present invention includes: a step of forming a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, on the surface of a first conductive-type SiC semiconductor layer; and a step for heat treating the Schottky metal while the surface thereof is exposed, and structuring the junction of the SiC semiconductor layer to the Schottky metal to be planar, or to have recesses and protrusions of equal to or less than 5 nm.

Electronic devices are formed on donor substrates and transferred to carrier substrates by forming bonding regions on the electronic devices and bonding the bonding regions to a carrier substrate. The transfer process may include forming anchors and removing sacrificial regions.

High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.

A Schottky metal 9 is in Schottky-contact with a center portion of a surface of an epitaxial layer 4. A peripheral trench 13 is formed by digging from the surface of the epitaxial layer 4 on a boundary portion between an active region 21 where the Schottky metal 9 is in Schottky-contact with the surface of the epitaxial layer 4 and a peripheral region 22 outside of the active region in a surface layer portion of the epitaxial layer 4. An insulating film 14 is formed on an entire area of inner wall surfaces of the peripheral trench 13. There is provided with a conductor 15 which is connected to the Schottky metal 9 and is opposed to the entire area of the inner wall surfaces of the peripheral trench 13 via the insulating film 14 in the peripheral trench 13.

Described examples include an integrated circuit having a semiconductor substrate having an epitaxial layer located thereon, the epitaxial layer having a surface. The integrated circuit also has a buried layer formed in the semiconductor substrate, the epitaxial layer located between the buried layer and the surface. The integrated circuit also has a Schottky contact and an ohmic contact formed on the surface. The integrated circuit also has a Pdrift region in the epitaxial layer located between the ohmic contact and the Schottky contact.

A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.