Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
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H01L29/66
Types of semiconductor device; ; Multistep manufacturing processes therefor
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H01L29/66007
Multistep manufacturing processes
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H01L29/66075
of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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H01L29/66227
the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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H01L29/66234
Bipolar junction transistors [BJT]
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H01L29/6631
with an active layer made of a group 13/15 material
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H01L29/6631

Trenched and implanted bipolar junction transistor
09917180 · 2018-03-13 · ·

The present invention concerns a monolithically merged trenched-and-implanted Bipolar Junction Transistor (TI-BJT) with antiparallel diode and a method of manufacturing the same. Trenches are made in a collector, base, emitter stack downto the collector. The base electrode is formed on an implanted base contact region at the bottom surface of the trench. The present invention also provides for products produced by the methods of the present invention and for apparatuses used to perform the methods of the present invention.