A method of operating a bipolar transistor having a source, a drain, and a channel electrically coupled to the source and the drain includes applying a bias voltage to a gate electrically coupled to the channel, increasing a conductivity of the channel via field ionization in response to applying the bias voltage, and conducting current from the source to the drain

A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer includes a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer includes a first-type channel region and a first source-drain region, the second-type active layer includes a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode.

A semiconductor device includes a substrate, a two-dimensional (2D) material layer formed on the substrate and having a first region and a second region adjacent to the first region, and a source electrode and a drain electrode provided to be respectively in contact with the first region and the second region of the 2D material layer, the second region of the 2D material layer including an oxygen adsorption material layer in which oxygen is adsorbed on a surface of the second region.

After forming a trench extending through a sacrificial gate layer to expose a surface of a doped bottom semiconductor layer, a diode including a first doped semiconductor segment and a second doped semiconductor segment having a different conductivity type than the first doped semiconductor segment is formed within the trench. The sacrificial gate layer that laterally surrounds the first doped semiconductor segment and the second doped semiconductor segment is subsequently replaced with a gate structure to form a gated diode.