The present disclosure relates to a polysilicon-diode triggered compact silicon controlled rectifier. In particular, the present disclosure relates to a structure including a silicon controlled rectifier (SCR) which includes an n-well adjacent and in direct contact with a p-well, the SCR includes at least one shallow trench isolation (STI) region, and at least one polysilicon diode on top of the at least one STI region.

A capacitive discharge unit for a fireset for initiating a fuzing event to detonate an explosive material. The capacitive discharge unit includes a capacitor for storing a voltage, and a silicon carbide thyristor for switching from a high to a low impedance state in response to a triggering pulse, which results in electrical current flowing from the capacitor to the fuzing load. The fireset may further include a controller for providing the triggering pulse to the silicon carbide thyristor. The capacitor stores between 500 V and 1200 V, and the silicon carbide thyristor has a rise time of between 78 ns and 141 ns. The capacitive discharge unit may further include a silicon carbide diode, in the form of a reverse current blocking diode or a Schottkey diode, functioning as a shunt to prevent a reverse current from passing through the switching silicon carbide thyristor.

A power electronic arrangement includes a semiconductor switch structure configured to assume a forward conducting state. A steady-state current carrying capability of the semiconductor switch structure in the forward conducting state is characterized by a nominal current. The semiconductor switch structure is configured to conduct, in the forward conducting state, at least a part of a forward current in a forward current mode of the power electronic arrangement. A diode structure electrically connected in antiparallel to the semiconductor switch structure is configured to conduct at least a part of a reverse current in a reverse mode of the power electronic arrangement. A thyristor structure electrically connected in antiparallel to the semiconductor switch structure has a forward breakover voltage lower than a diode on-state voltage of the diode structure at a critical diode current value, the critical diode current value amounting to at most five times the nominal current.

A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second complementary conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode, and the front-side base region is electrically connected to a front-side electrode. A turn-on structure, which is an emitter structure of the second conduction type, is embedded into the front-side base region and/or rear-side base region and is covered by the respective electrode and is electrically contacted with the electrode placed on the base region respectively embedding it. It can be turned on by a trigger structure which can be activated by an electrical turn-on signal. In the activated state, the trigger structure injects an electrical current surge into the semiconductor body, which irreversibly destroys a semiconductor junction.

Provided is a semiconductor device with a diode and a silicon controlled rectifier (SCR) including a substrate having a first conductivity type, a well region having a second conductivity type, a first doped region having the first conductivity type, and a second doped region having the second conductivity type. The well region is disposed in the substrate. The first doped region is disposed in the substrate. The second doped region is disposed in the substrate. The well region and the first doped region form a first PN junction, the well region and the substrate form a second PN junction, and the substrate and the second doped region form a third junction. The first, second, and third PN junctions form the SCR, and the first doped region and the third PN junction form the diode.

An ESD protection circuit and integrated circuit for a broadband circuit are disclosed. The ESD protection circuit includes a silicon-controlled rectifier, an inductor and a trigger unit. The silicon-controlled rectifier is formed by four semiconductor materials and includes a first end, a second end and a third end. The first end is coupled with a first P-type semiconductor material and a signal input end. The second end is coupled with a second N-type semiconductor material. The third end is coupled with a second P-type semiconductor material. One end of the inductor is coupled with the signal input end and the first end, and the other end thereof is coupled with a signal output end and a high-frequency circuit. One end of the trigger unit is coupled with the signal output end and the high-frequency circuit, and the other end thereof is coupled with the third end.

A bidirectional transient voltage suppressor is constructed as an NPN bipolar transistor incorporating optimized collector-base junction realizing avalanche mode breakdown. In some embodiments, the bidirectional transient voltage suppressor is constructed as an NPN bipolar transistor incorporating individually optimized collector-base and emitter-base junctions with the optimized junctions being spatially distributed. The optimized collector-base and emitter-base junctions both realize avalanche mode breakdown to improve the breakdown voltage of the transistor. Alternately, a unidirectional transient voltage suppressor is constructed as an NPN bipolar transistor with a PN junction diode connected in parallel in the reverse bias direction to the protected node and incorporating individually optimized collector-base junction of the bipolar transistor and p-n junction of the diode.

A bidirectional transient voltage suppressor is constructed as an NPN bipolar transistor incorporating optimized collector-base junction realizing avalanche mode breakdown. In some embodiments, the bidirectional transient voltage suppressor is constructed as an NPN bipolar transistor incorporating individually optimized collector-base and emitter-base junctions with the optimized junctions being spatially distributed. The optimized collector-base and emitter-base junctions both realize avalanche mode breakdown to improve the breakdown voltage of the transistor. Alternately, a unidirectional transient voltage suppressor is constructed as an NPN bipolar transistor with a PN junction diode connected in parallel in the reverse bias direction to the protected node and incorporating individually optimized collector-base junction of the bipolar transistor and p-n junction of the diode.

A semiconductor device comprises at least one cell. The structure of each cell comprises: a N-type substrate; at least one first trench unit and at least one second trench unit provided on one side of the N-type substrate; at least one P-type semiconductor region provided on the other side of the N-type substrate, the P-type semiconductor region consisting an anode region; at least one N-type carrier barrier region; and at least one P-type electric field shielding region. The purpose of the present invention is to provide a semiconductor device which has a novel cell structure to provide: a large safe operating area; a short-circuit resistance; elimination of the effect of parasitic thyristors; a low gate-collector charge (Q.sub.GC) to provide a maximum resistance to dv/dt; increase of conductivity modulation at the emitter side to provide a large current density and an extremely low on-voltage drop; a small turn-off loss; and a low process complexity.

In a general aspect, a semiconductor device can include a heavily-doped substrate of a first conductivity type, a lightly-doped epitaxial layer of a second conductivity type disposed on the heavily-doped substrate, and a heavily-doped epitaxial layer of the second conductivity type disposed on the lightly-doped epitaxial layer. The heavily-doped epitaxial layer can have a doping concentration that is greater than a doping concentration of the lightly-doped epitaxial layer. At least a portion of the heavily-doped substrate can be included in a first terminal of a Zener diode, and at least a portion of the lightly-doped epitaxial layer and at least a portion of the heavily-doped epitaxial layer can be included in a second terminal of the Zener diode. The semiconductor device can further include a termination trench that extends through the heavily-doped epitaxial layer and the lightly-doped epitaxial layer, and terminates in the heavily-doped substrate.