An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.

An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.

The disclosure provides dyes for marking hydrocarbon compositions. More particularly, the disclosure relates to non-mutagenic dyes for marking hydrocarbon com positions.

A MOS controlled thyristor device according to the concept of the present invention includes a substrate comprising a first surface and a second surface, which face each other, gate patterns disposed on the first surface, a cathode electrode configured to cover the gate patterns, and an anode electrode disposed on the second surface, The substrate includes a lower emitter layer having a first conductive type, a lower base layer having a second conductive type on the lower emitter layer, an upper base region provided in an upper portion of the lower emitter layer and having a first conductive type, wherein the upper base region is configured to expose a portion of a top surface of the lower base layer, an upper emitter region having a second conductive type and provided in an upper portion of the upper base region, a first doped region having a first conductive type and a second doped region surrounded by the first doped region and having a second conductive type, wherein the first and second doped regions are provided in an upper portion of the upper emitter region, and a first doping pattern having a first conductive type, which is provided on one surface of the upper portion of the upper emitter region. The first doping pattern is interposed between the upper base region and the first doped region along a first direction parallel to the top surface of the substrate. The first doping pattern is configured to expose a top surface of the upper emitter region on the other surface of the upper portion of the upper emitter region. Each of the gate patterns is configured to cover portions of an exposed top surface of the lower base layer, an exposed top surface of the upper base layer, an exposed top surface of the upper emitter region, a top surface of the first doping pattern, and a top surface of the first doped region. The cathode electrode is configured to cover portions of top and side surfaces of the gate pattern, a top surface of the second doped region, and a top surface of the first doped region. The first conductive type and the second conductive type are different from each other.

After the various regions of a vertical power device are formed in or on the top surface of an n-type wafer, the wafer is thinned, such as by grinding. A drift layer may be n-type, and various n-type regions and p-type regions in the top surface contact a top metal electrode. A blanket dopant implant through the bottom surface of the thinned wafer is performed to form an n− buffer layer and a bottom p+ emitter layer. Energetic particles are injected through the bottom surface to intentionally damage the crystalline structure. A wet etch is performed, which etches the damaged crystal at a much greater rate, so some areas of the n− buffer layer are exposed. The bottom surface is metallized. The areas where the metal contacts the n− buffer layer form cathodes of an anti-parallel diode for conducting reverse voltages, such as voltage spikes from inductive loads.

An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.

An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.

An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.

An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.

An insulated gate turn-off (IGTO) device, formed as a die, has a layered structure including a p+ layer (e.g., a substrate), an n− epi layer, a p-well, trenched insulated gate regions formed in the p-well, and n+ regions between the gate regions, so that vertical NPN and PNP transistors are formed. The device may be formed of a matrix of cells or may be interdigitated. To turn the device on, a positive voltage is applied to the gate, referenced to the cathode. The cells further contain a vertical p-channel MOSFET, for rapidly turning the device off. The p-channel MOSFET may be made a depletion mode device by implanting boron ions at an angle into the trenches to create a p-channel. This allows the IGTO device to be turned off with a zero gate voltage while in a latch-up condition, when the device is acting like a thyristor.