According to the embodiment of the invention, the semiconductor device includes a semiconductor member, a first electrode, a second electrode, a third electrode, a first conductive member, and a first insulating member. The first semiconductor member includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region includes one of a first material and a second material. The third semiconductor region is provided between at least a part of the first semiconductor region and the second semiconductor region. The first electrode is electrically connected with the first semiconductor region. The second electrode is electrically connected with the second semiconductor region. At least a part of the third semiconductor region is between an other portion of the third electrode and the first conductive member. At least a part of the first insulating member is between the third electrode and the semiconductor member.

There are provided a vertical semiconductor device, a method of manufacturing the same, and an electronic device including the same. According to an embodiment, the semiconductor device may include a vertical active region disposed on a substrate and comprising a first source/drain layer, a channel layer and a second source/drain layer which are stacked in sequence; a gate stack surrounding at least a part of a periphery of the channel layer; and at least one of: a first electrical connection component for the first source/drain layer, comprising a first contact portion disposed above a top surface of the active region and a first conductive channel in contact with the first contact portion and extending from the top surface of the active region to be in contact with at least a part of sidewalls of the first source/drain layer; and a second electrical connection component for the gate stack, comprising a second contact portion disposed above the top surface of the active region and a second conductive channel in contact with the second contact portion and extending from the top surface of the active region to be in contact with at least a part of sidewalls of a gate conductor layer in the gate stack.

A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a lattice layer, a third nitride-based semiconductor layer, a first source electrode and a second electrode, and a gate electrode. The second nitride-based semiconductor layer is disposed over the first nitride-based semiconductor layer. The lattice layer is disposed between the first and second nitride-based semiconductor layers and doped to the first conductivity type. The lattice layer comprises a plurality of first III-V layers and second III-V layers alternatively stacked. Each of the first III-V layers has a high resistivity region and a current aperture enclosed by the high resistivity region. The high resistivity region comprises more metal oxides than the current aperture so as to achieve a resistivity higher than that of the current aperture. At least two of the first III-V layers have the same group III element at different concentrations.

Systems and methods for manufacturing two-dimensional (2D) gas channel for vertical transistors. The system can include a semiconductor device. The semiconductor device can include a channel structure surrounding a first dielectric core. The channel structure can include a first two-dimensional (2D) material and a second 2D material. The semiconductor device can include a source metal surrounding a first portion of the channel structure. The semiconductor device can include a drain metal surrounding a second portion of the channel structure. The semiconductor device can include a gate metal surrounding a third portion of the channel structure.

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

A normally-off heterojunction field-effect transistor is provided, including a superposition of a first layer, of III-N type, and of a second layer, of III-N type, so as to form a two-dimensional electron gas; a stack of an n-doped third layer making electrical contact with the second layer, and of a p-doped fourth layer placed in contact with and on the third layer, a first conductive electrode and a second conductive electrode making electrical contact with the two-dimensional electron gas; a dielectric layer disposed against a lateral face of the fourth layer; and a control electrode separated from the lateral face of the fourth layer by the dielectric layer.

A transistor structure, according to one embodiment, includes: an epitaxially grown vertical channel, a word line which surrounds a middle portion of the vertical channel, and a p-MTJ sensor coupled to a first end of the vertical channel. The second side of the vertical channel is opposite the first side of the vertical channel along a plane perpendicular to a deposition direction. A magnetic device, according to another embodiment, includes: a plurality of transistor structures, each of the transistor structures comprising: an epitaxially grown vertical channel, a word line which surrounds a middle portion of the vertical channel, and a p-MTJ sensor coupled to a first end of the vertical channel.

A transistor includes a first layer comprising a group III-nitride semiconductor. A second layer comprising a group III-nitride semiconductor is disposed over the first layer. A third layer comprising a group III-nitride semiconductor is disposed over the second layer. An interface between the second layer and the third layer form a polarization heterojunction. A fourth layer comprising a group III-nitride semiconductor is disposed over the third layer. An interface between the third layer and the fourth layer forms a pn junction. A first electrical contact pad is disposed on the fourth layer. A second electrical contact pad is disposed on the third layer. A third electrical contact pad is electronically coupled to bias the polarization heterojunction.

A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer disposed above the substrate; a second nitride semiconductor layer disposed above the first nitride semiconductor layer and having a band gap larger than a band gap of the first nitride semiconductor layer; a third nitride semiconductor layer selectively disposed above the second nitride semiconductor layer and containing a p-type first impurity element; a high resistance region disposed in the third nitride semiconductor layer, the high resistance region containing a second impurity element and having a specific resistance higher than a specific resistance of the third nitride semiconductor layer; and a gate electrode disposed above the high resistance region, wherein an end of the high resistance region is inside a surface end of the third nitride semiconductor layer.

There are provided a semiconductor device, a method of manufacturing the same, and an electronic device including the device. According to an embodiment, the semiconductor device may include a substrate; a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence, wherein the second source/drain layer comprises a first semiconductor material which is stressed; and a gate stack surrounding a periphery of the channel layer.