In some embodiments, the present disclosure relates to a semiconductor device including a semiconductor region over a bulk oxide, which is over a semiconductor substrate. Above the bulk oxide is a lower source region that is laterally spaced from a lower drain region by a lower portion of the semiconductor region. An upper source region is laterally spaced from an upper drain region by an upper portion of the semiconductor region and is vertically spaced from the lower source region and the lower drain region. The upper source region is coupled to the lower source region, and the upper drain region is coupled to the lower drain region. A gate electrode, coupled to the semiconductor substrate and over a gate oxide, is above the upper portion of the semiconductor region. The lower and upper portions of the semiconductor region respectively include a first channel region and a second channel region.

A method for manufacturing a semiconductor device includes forming a fin on a semiconductor substrate, and forming a bottom source/drain region adjacent a base of the fin. In the method, a dielectric layer, a work function metal layer and a first gate metal layer are sequentially deposited on the bottom source/drain region and around the fin. The dielectric layer, the work function metal layer and the first gate metal layer form a gate structure. The method also includes removing the dielectric layer, the work function metal layer and the first gate metal layer from an end portion of the fin, and depositing a second gate metal layer around the end portion of the fin in place of the removed dielectric layer, the removed work function metal layer and the removed first gate metal layer. The second gate metal layer contacts the end portion of the fin.

One illustrative integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor with an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure and a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor. In this example, the product also includes a gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of each of the GSD contact structure and the gate contact structure is positioned at a first level that is at a level that is above a level of an upper surface of the insulating source/drain cap.

Embodiments herein relate to a current sensor for a power converter such as a buck converter. The power converter is fabricated on a high bandgap semiconductor die while the current sensor includes a portion on the same die and a portion on a silicon die. The portion on the same die includes a sense transistor, while the portion on the silicon die includes a feedback circuit for controlling a voltage of the sense transistor to ensure it is biased according to the bias of a switching transistor of the power converter. A current of the sense transistor can then be processed such as by an averaging or sampling process.

There is provided a semiconductor device comprising at least, a crystalline oxide semiconductor layer which has a band gap of 4.5 eV or more; and a field-effect mobility of 10 cm.sup.2V.Math.s or higher.

An example welding-type power supply includes: a transformer having a primary winding and first and second secondary windings; an input circuit configured to provide an input voltage to the primary winding of the transformer; first, second, third, and fourth switching elements, and a control circuit configured to: control the first, second, third, and fourth switching elements to selectively output a positive or negative output voltage without a separate rectifier stage by selectively controlling ones of the first, second, third, and fourth switching elements based on a commanded output voltage polarity and an input voltage polarity to the transformer; and prior to changing from a first output voltage polarity to a second output voltage polarity, controlling the first, second, third, and fourth switching elements to reverse the power flow to return reactive energy to an input circuit via the transformer.

Methods and apparatus to provide welding power are disclosed. An example welding-type power supply includes: a transformer having first and second secondary windings; switching elements configured to control current flow from the first and second secondary windings to an output; and a control circuit configured to control the switching elements to selectively output a positive output voltage or a negative output voltage without a separate rectifier stage by selecting, based on an output voltage polarity, a first subset of the switching elements to perform rectification.

A method includes forming a transistor over a substrate; forming a conductive structure over the substrate, such that a first end of the conductive structure is electrically coupled to a gate of the transistor, and a second end of the conductive structure is electrically coupled to the substrate; applying biases to the gate of the transistor and source/drain structures of the transistor; determining whether the first end and the second end of the conductive structure are electrically connected; generating, based on the determination, a first result indicating that the first end and the second end of the conductive structure are electrically connected; and qualifiying the conductive structure as an antenna in response to the first result.

A semiconductor device, includes: a first semiconductor chip including a first semiconductor substrate; and a second semiconductor chip including a second semiconductor substrate, wherein the first semiconductor substrate has a first substrate main surface and a first substrate back surface facing opposite directions in a first direction, and includes a first region and a second region disposed on the first substrate main surface, wherein the first semiconductor chip includes: a first MOSFET of a first type structure formed to include the first region; and a control circuit formed to include the second region, wherein the second semiconductor chip includes a second MOSFET of a second type structure formed to include the second semiconductor substrate, and wherein the second type structure is different from the first type structure.

A method for manufacturing a semiconductor device includes forming a fin on a semiconductor substrate, and forming a bottom source/drain region adjacent a base of the fin. In the method, a dielectric layer, a work function metal layer and a first gate metal layer are sequentially deposited on the bottom source/drain region and around the fin. The dielectric layer, the work function metal layer and the first gate metal layer form a gate structure. The method also includes removing the dielectric layer, the work function metal layer and the first gate metal layer from an end portion of the fin, and depositing a second gate metal layer around the end portion of the fin in place of the removed dielectric layer, the removed work function metal layer and the removed first gate metal layer. The second gate metal layer contacts the end portion of the fin.