A semiconductor layer is doped with a first doping type and has an upper surface. A first electrode insulated from the semiconductor layer extending through the semiconductor layer from the upper surface. A second electrode insulated from the semiconductor layer extends through the semiconductor layer from the upper surface. The first and second electrodes are biased by a voltage to produce an electrostatic field within the semiconductor layer causing the formation of a depletion region. The depletion region responds to absorption of a photon with an avalanche multiplication that produces charges that are collected at first and second oppositely doped regions within the semiconductor substrate.

The present disclosure provides a phototransistor and a manufacturing method therefor, the phototransistor having a defective oxide ray absorption layer introduced to an oxide semiconductor phototransistor through a solution process or a defective oxide ray absorption part introduced to an interface between a gate insulation film and an oxide semiconductor layer through interface control, which forms damage, thereby improving light absorption in the range of a visible light region.

A light-triggered transponder includes one or more of photo cells, a clock recovery circuit and a reverse antenna system. The clock recovery circuit (CRC) includes a photoconductor with a source terminal, a drain terminal for receiving a voltage, the photoconductor resistance varying with received light intensity. The CRC is configured to generate a recovered clock. A reverse antenna system connected to at least one photo cell and configured to transmit data. The photoconductor configured to produce a modulated voltage signal from an incident modulated light incident. The CRC can include an amplifier coupled to the source terminal of the photoconductor via a capacitor for receiving the modulated voltage signal and outputting an analog signal generated from the voltage signal. The CRC can include an inverter coupled to the amplifier and configured to digitize the analog signal of the amplifier.

A light-triggered transponder includes one or more of photo cells, a clock recovery circuit and a reverse antenna system. The clock recovery circuit (CRC) includes a photoconductor with a source terminal, a drain terminal for receiving a voltage, the photoconductor resistance varying with received light intensity. The CRC is configured to generate a recovered clock. A reverse antenna system connected to at least one photo cell and configured to transmit data. The photoconductor configured to produce a modulated voltage signal from an incident modulated light incident. The CRC can include an amplifier coupled to the source terminal of the photoconductor via a capacitor for receiving the modulated voltage signal and outputting an analog signal generated from the voltage signal. The CRC can include an inverter coupled to the amplifier and configured to digitize the analog signal of the amplifier.

An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure. The quantum dot layer is between the first electrode and the second electrode on the base portion and includes a plurality of quantum dots. The bank structure covers at least partial regions of the first electrode and the second electrode, defines a region where the quantum dot layer is formed, and is formed of an inorganic material.

An optical device useful for spatial light modulation. The device comprises: a semiconductor layer having a first surface and a second surface, the semiconductor having an electric field-dependent resonance wavelength; a first electrode electrically connected to the semiconductor layer; a first insulating layer adjacent to the first surface of the semiconductor layer, and a second insulating layer adjacent to the second surface of the semiconducting layer, the first and the second insulating layers each being optically transparent at the resonance wavelength; a first group of at least one gate electrodes disposed adjacent to the first insulating layer, and a second group of at least one gate electrodes disposed adjacent to the second insulating layer, each gate electrode being at least 80% optically transparent at the resonance wavelength; wherein the first and the second groups of gate electrodes, taken together, form at least two regions in the semiconductor layer, an electrostatic field in each of the at least two regions being independently controllable by application of voltage to the first and the second groups of gate electrodes, the at least two regions abutting each other along at least one boundary.

A photosensitive module is provided. The photosensitive module includes a base, an integrated package substrate, and a photosensitive element. The integrated package substrate is connected to the base. The integrated package substrate has a plurality of first electronic components, and the first electronic components are housed inside the integrated package substrate without being exposed to external environment. The photosensitive element is connected to the base, and the photosensitive element is configured to receive a light beam traveling along an optical axis.

Crystalline material, phototransistor, and methods of fabrication thereof. The crystalline material comprising a plurality of stacked two-dimensional black phosphorous carbide layers.

A first wafer of semiconductor material has a surface. A second wafer of semiconductor material includes a substrate and a structural layer on the substrate. The structural layer integrates a detector device for detecting electromagnetic radiation. The structural layer of the second wafer is coupled to the surface of the first wafer. The substrate of the second wafer is shaped to form a stator, a rotor, and a mobile mass of a micromirror. The stator and the rotor form an assembly for capacitively driving the mobile mass.

A transistor includes (i) a first wire including a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature and (ii) a second wire including a superconducting component configured to operate in a superconducting state while: a temperature of the superconducting component is below a superconducting threshold temperature and a first input current supplied to the superconducting component is below a current threshold. The semiconducting component is located adjacent to the superconducting component. In response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first input current exceeds the lowered current threshold.