A radio frequency module includes a first substrate having a first principal surface and a second principal surface on the opposite side to the first principal surface; a signal terminal which is provided on the first principal surface and through which a signal is transmitted to and received from an external circuit; a power supply terminal that is provided on the second principal surface and is supplied with a power supply signal; an antenna; and a radio frequency electronic component that is electrically connected to the signal terminal, the power supply terminal and the antenna, and controls transmission and reception of the antenna based on the signal and the power supply signal.

LTCC structure extends between top and bottom surfaces, with at least one cavity being formed within the structure and extending from the top surface inwardly in the direction of the bottom surface. A die is disposed within the cavity a top surface of the die is positioned flush with the top surface of the package, resulted in the shortest length of the wire box connecting the die with the LTCC structure and ultimately reducing the inductance.

The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.

A cryptographic device is configured to compute a target block cipher (B.sub.t) on an input message and includes a control unit, and first and second block cipher units for computing the target block cipher (B.sub.t) on the input message. The control unit is configured to take the first block cipher result and the second block cipher result as input, and to produce the first block cipher result only when the first and second block cipher results are equal.

A tank circuit structure includes a first gate layer, a first substrate, a first shielding layer, a first conductive line and a first inter metal dielectric (IMD) layer. The first substrate is over the first gate layer. The first shielding layer is over the first substrate. The first conductive line is over the first shielding layer. The first IMD layer is between the first substrate and the first conductive line.

Embodiments may relate to a semiconductor package that includes a die and a package substrate. The package substrate may include one or more cavities that go through the package substrate from a first side of the package substrate that faces the die to a second side of the package substrate opposite the first side. The semiconductor package may further include a waveguide communicatively coupled with the die. The waveguide may extend through one of the one or more cavities such that the waveguide protrudes from the second side of the package substrate. Other embodiments may be described or claimed.

A semiconductor device comprises a substrate having a first surface and a second surface opposite the first surface, at least one connection element arranged on the first surface of the substrate to electrically and mechanically connect the substrate to a printed circuit board, and a radar semiconductor chip arranged on the first surface of the substrate.

The present disclosure describes a coaxial-interconnect structure that is integrated into a semiconductor component and methods of forming the coaxial-interconnect structure. The coaxial interconnect-structure, which electrically couples circuitry of an integrated-circuit (IC) die to traces of a packaging substrate, comprises a signal core elongated about an axis, a ground shield elongated about the axis, and an insulator disposed between the signal core and the ground shield.

A multilayer circuit board having a central conductor and core layers between a first set of alternating layers and a second set of alternating layers. The central conductor includes a first compound via through the first set of alternating layers, and a second compound via through the second set of alternating layers. A gap extends from a first side of the multilayer circuit board to a second side of the multilayer circuit board. A first array of ground protrusions surrounds the gap and is arranged in a first pattern on the first side of the multilayer circuit board. A second array of ground protrusions surrounds the gap and is arranged in a second pattern on the second side of the multilayer circuit board. A ground path connects the first array of ground protrusions to the second array of ground protrusions.

A tank circuit structure includes a first gate layer, a first substrate, a first shielding layer, a first conductive line and a first inter metal dielectric (IMD) layer. The first substrate is over the first gate layer. The first shielding layer is over the first substrate. The first conductive line is over the first shielding layer. The first IMD layer is between the first substrate and the first conductive line.