A method may include forming a metal pattern in a metal layer of a fabricated integrated circuit device and under a target bump of the fabricated integrated circuit device, wherein the metal pattern has an inner shape and an outer field such that a void space in the metal layer is created between the inner shape and the outer field and approximately centering the void space on an outline of an under-bump metal formed under the target bump with a keepout distance from the inner shape and the outer field on either side of the outline such that the metal minimizes local variations in mechanical stress on underlying structures within the fabricated integrated circuit device.

A method may include forming a metal pattern in a metal layer of a fabricated integrated circuit device and under a target bump of the fabricated integrated circuit device, wherein the metal pattern has an inner shape and an outer field such that a void space in the metal layer is created between the inner shape and the outer field and approximately centering the void space on an outline of an under-bump metal formed under the target bump with a keepout distance from the inner shape and the outer field on either side of the outline such that the metal minimizes local variations in mechanical stress on underlying structures within the fabricated integrated circuit device.

A semiconductor package includes a semiconductor substrate, a conductive pad on the semiconductor substrate, a redistribution line conductor, a coating insulator, and an aluminum oxide layer. The redistribution line conductor is electrically connected to the conductive pad. The coating insulator covers the redistribution line conductor and partially exposes the redistribution line conductor. The aluminum oxide layer is provided below the coating insulator and extends along a top surface of the redistribution line conductor, and the aluminum oxide layer is in contact with the redistribution line conductor.

A semiconductor package includes a semiconductor substrate, a conductive pad on the semiconductor substrate, a redistribution line conductor, a coating insulator, and an aluminum oxide layer. The redistribution line conductor is electrically connected to the conductive pad. The coating insulator covers the redistribution line conductor and partially exposes the redistribution line conductor. The aluminum oxide layer is provided below the coating insulator and extends along a top surface of the redistribution line conductor, and the aluminum oxide layer is in contact with the redistribution line conductor.

A semiconductor structure is provided. The semiconductor structure includes a metallization structure with a dielectric surface. A first protecting structure over the dielectric surface. A first protecting structure over the passivation layer. A conductive pad over the dielectric surface. A polymer layer over the first protecting structure and the conductive pad. A conductive bump electrically coupled to the conductive pad through an opening of the polymer layer. A first portion of the first protecting structure is leveled with the conductive pad and a second portion of the first protecting structure is higher than the conductive pad.

In one embodiment, a semiconductor device includes a first insulator, a first pad provided in the first insulator, a second insulator provided on the first insulator, and a second pad provided on the first pad in the second insulator. Furthermore, the first insulator includes a first film that is in contact with the first pad and the second insulator, and a second film provided at an interval from the first pad and the second insulator, and including a portion provided at a same height as at least a portion of the first pad.

A semiconductor structure and manufacturing method thereof are provided. The semiconductor structure includes a metallization structure with a dielectric surface. A first protecting structure is on the dielectric surface. A conductive pad is on the dielectric surface and is leveled with the first protecting structure. A polymer layer is over the first protecting structure and the conductive pad. A conductive bump is electrically coupled to the conductive pad through an opening of the polymer layer. A method for manufacturing a semiconductor structure is also provided.

A semiconductor package includes an interposer chip having a frontside, a backside, and a corner area on the backside defined by a first corner edge and a second corner edge of the interposer chip. A die is bonded to the frontside of the interposer chip. At least one dam structure is formed on the corner area of the backside of the interposer chip. The dam structure includes an edge aligned to at least one the first corner edge and the second corner edge of the interposer chip.

A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.

A semiconductor package includes a semiconductor substrate, an interconnect structure disposed over the substrate, a first passivation layer disposed over an interconnect structure, a contact pad disposed over the first passivation layer, a dummy disposed around the contact pad and over the first passivation layer, and a second passivation layer overlaying the dummy and the contact pad.