An electronic device includes a semiconductor die having a lower surface, a sintered metallic layer underlying the lower surface of the semiconductor die, a conductive layer underlying the sintered metallic layer, and a conductive substrate underlying the conductive layer.

An electronic device includes a semiconductor die having a lower surface, a sintered metallic layer underlying the lower surface of the semiconductor die, a conductive layer underlying the sintered metallic layer, and a conductive substrate underlying the conductive layer.

A microelectronic device is formed by thinning a substrate of the microelectronic device from a die attach surface of the substrate, and forming a copper-containing layer on the die attach surface of the substrate. A protective metal layer is formed on the copper-containing layer. Subsequently, the copper-containing layer is attached to a package member having a package die mount area. The protective metal layer may optionally be removed prior to attaching the copper-containing layer to the package member. Alternatively, the protective metal layer may be left on the copper-containing layer when the copper-containing layer is attached to the package member. A structure formed by the method is also disclosed.

Techniques for providing a semiconductor assembly having an interconnect die for die-to-die interconnection, an IC package, a method for manufacturing, and a method for routing signals in an IC package are described. In one implementation, a semiconductor assembly is provided that includes a first interconnect die coupled to a first integrated circuit (IC) die and a second IC die by inter-die connections. The first interconnect die includes solid state circuitry that provides a signal transmission path between the IC dice.

Techniques for providing a semiconductor assembly having an interconnect die for die-to-die interconnection, an IC package, a method for manufacturing, and a method for routing signals in an IC package are described. In one implementation, a semiconductor assembly is provided that includes a first interconnect die coupled to a first integrated circuit (IC) die and a second IC die by inter-die connections. The first interconnect die includes solid state circuitry that provides a signal transmission path between the IC dice.

According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.

A packaged integrated circuit for operating reliably at elevated temperatures is provided. The packaged integrated circuit includes a modified extracted die, which includes one or more extended bond pads, a package comprising a base and a lid, and a plurality of new bond wires. The modified extracted die is placed into a cavity of the base. After the modified extracted die is placed into the cavity, the plurality of new bond wires are bonded between the one or more extended bond pads of the modified extracted die and package leads of the package base or downbonds. After bonding the plurality of new bond wires, the lid is sealed to the base.

A method includes placing an electronic device on a pliable mating surface on a major surface of a mold such that at least one contact pad on the electronic device presses against the pliable mating surface. The pliable mating surface is on a microstructure in an arrangement of microstructures on the major surface of the mold. A liquid encapsulant material is applied over the electronic device and the major surface of the mold, and then hardened to form a carrier for the electronic device. The mold and the carrier are separated such that the microstructures on the mold form a corresponding arrangement of microchannels in the carrier, and at least one contact pad on the electronic device is exposed in a microchannel in the arrangement of microchannels. A conductive particle-containing liquid is deposited in the microchannel, which directly contacts the contact pad exposed in the microchannel.

A method includes placing an electronic device on a pliable mating surface on a major surface of a mold such that at least one contact pad on the electronic device presses against the pliable mating surface. The pliable mating surface is on a microstructure in an arrangement of microstructures on the major surface of the mold. A liquid encapsulant material is applied over the electronic device and the major surface of the mold, and then hardened to form a carrier for the electronic device. The mold and the carrier are separated such that the microstructures on the mold form a corresponding arrangement of microchannels in the carrier, and at least one contact pad on the electronic device is exposed in a microchannel in the arrangement of microchannels. A conductive particle-containing liquid is deposited in the microchannel, which directly contacts the contact pad exposed in the microchannel.

Techniques for providing a semiconductor assembly having an interconnect die for die-to-die interconnection, an IC package, a method for manufacturing, and a method for routing signals in an IC package are described. In one implementation, a semiconductor assembly is provided that includes a first interconnect die coupled to a first integrated circuit (IC) die and a second IC die by inter-die connections. The first interconnect die includes solid state circuitry that provides a signal transmission path between the IC dice.