An object of the present invention is to provide an electrically conductive paste and a sintered body thereof having a low electric resistance value and excellent electrical conductivity when made into a sintered body. An electrically conductive paste comprising: a flake-like silver powder having a median diameter D50 of 15 μm or less; a silver powder having a median diameter D50 of 25 μm or more; and a solvent, wherein the content of the flake-like silver powder is 15 to 70 parts by mass and the content of the silver powder having a median diameter D50 of 25 μm or more is 30 to 85 parts by mass based on 100 parts by mass in total of the flake-like silver powder and the silver powder having a median diameter D50 of 25 μm or more.

An object of the present invention is to provide an electrically conductive paste and a sintered body thereof having a low electric resistance value and excellent electrical conductivity when made into a sintered body. An electrically conductive paste comprising: a flake-like silver powder having a median diameter D50 of 15 μm or less; a silver powder having a median diameter D50 of 25 μm or more; and a solvent, wherein the content of the flake-like silver powder is 15 to 70 parts by mass and the content of the silver powder having a median diameter D50 of 25 μm or more is 30 to 85 parts by mass based on 100 parts by mass in total of the flake-like silver powder and the silver powder having a median diameter D50 of 25 μm or more.

There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

A device includes a semiconductor die including a via, a layer of titanium tungsten (TiW) in contact with the via, and a copper pillar including a top portion and a bottom portion. The bottom portion is in contact with the layer of TiW. The copper pillar includes interdiffused zinc within the bottom portion.

This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion.

This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion.

A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes an interconnect structure on a substrate; a passivation layer disposed on the interconnect structure; a first via, a second via and a third via disposed in the passivation layer and connected to the interconnect structure, each of the first, second and third vias has an elongated shape longitudinally oriented along a first direction; and a first pad longitudinally oriented along the first direction and landing on the first, second and third vias.

A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes an interconnect structure on a substrate; a passivation layer disposed on the interconnect structure; a first via, a second via and a third via disposed in the passivation layer and connected to the interconnect structure, each of the first, second and third vias has an elongated shape longitudinally oriented along a first direction; and a first pad longitudinally oriented along the first direction and landing on the first, second and third vias.

In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.