The present disclosure relates to a semiconductor device with tilted insulating layers and a method for fabricating the semiconductor device with the tilted insulating layers. The semiconductor device includes a substrate, two conductive pillars positioned above the substrate and extended along a vertical axis, a first set of tilted insulating layers parallel to each other and positioned between the two conductive pillars, and a second set of tilted insulating layers parallel to each other and positioned between the two conductive pillars. The first set of tilted insulating layers are extended along a first direction slanted with respect to the vertical axis, the second set of tilted insulating layers are extended along a second direction slanted with respect to the vertical axis, and the first direction and the second direction are crossed.

There is provided a method for manufacturing a semiconductor device comprising: forming a first organic insulating layer on a semiconductor region; forming a bump base film including an edge portion contacting with the first organic insulating layer; performing heat treatment of the bump base film; and forming a second organic insulating layer so as to cover the edge portion of the bump base film and the first organic insulating layer around the bump base film while contacting with the first organic insulating layer, the second organic insulating layer being provided with a first opening that exposes a surface of the bump base film.

The present application discloses a method for fabricating a semiconductor device. The method includes providing a first chip comprising a first substrate, a first redistribution layer positioned above the first substrate, a first lower bonding pad positioned on the first redistribution layer, and a second lower bonding pad positioned above the first substrate and distant from the first lower bonding pad. The method also includes providing a second chip comprising a dense region and a loose region adjacent to the dense region; a plurality of upper pads positioned on the first lower bonding pad and the second lower bonding pad; and a plurality of second redistribution layers positioned on the plurality of upper pads. The method further performs bonding the second chip onto the first chip in a face-to-face manner, wherein the plurality of upper pads contact the first lower bonding pad and the second lower bonding pad.

A first conductive material having a first hardness is disposed within a recess or opening of a microelectronic component, in a first preselected pattern, and forms a first portion of an interconnect structure. A second conductive material having a second hardness different from the first hardness is disposed within the recess or opening in a second preselected pattern and forms a second portion of the interconnect structure.

Apparatuses and methods for providing thermal pathways from a substrate to a thermal bonding pad. The thermal pathways may be metal extensions of the thermal bonding pad that are disposed in channels formed in a backside passivation layer underneath the thermal bonding pad, and may be in direct contact with an underlying substrate. The thermal pathways may provide improved thermal dissipation from the substrate.

A semiconductor structure including an integrated circuit die and conductive bumps is provided. The integrated circuit die includes bump pads. The conductive bumps are disposed on the bump pads. Each of the conductive bumps includes a first pillar portion disposed on one of the bump pads and a second pillar portion disposed on the first pillar portion. The second pillar portion is electrically connected to one of the bump pads through the first pillar portion, wherein a first width of the first pillar portion is greater than a second width of the second pillar portion. A package structure including the above-mentioned semiconductor structure is also provided.

In a method for forming an integrated structure, a top dielectric layer is formed over a top surface of a substrate. The top dielectric layer includes a plurality of vias that are formed through the top dielectric layer and extend into the substrate. A bottom dielectric layer is formed on a bottom surface of the substrate. An isolation opening and a plurality of contact openings are further formed in the bottom dielectric layer and the substrate, where the isolation opening passes through the bottom dielectric layer and extends from the bottom surface to the top surface of the substrate. The isolation opening is filled with an insulating layer to form an isolation trench. The plurality of contact openings are filled with a conductive layer to form a plurality of through silicon contacts (TSCs). A conductive plate is further formed over the bottom dielectric layer.

A device includes a first chip having a first circuit element, a first interconnect pad in electrical contact with the first circuit element, and a barrier layer on the first interconnect pad, a superconducting bump bond on the barrier layer, and a second chip joined to the first chip by the superconducting bump bond, the second chip having a first quantum circuit element, in which the superconducting bump bond provides an electrical connection between the first circuit element and the first quantum circuit element.

A device includes a first chip having a first circuit element, a first interconnect pad in electrical contact with the first circuit element, and a barrier layer on the first interconnect pad, a superconducting bump bond on the barrier layer, and a second chip joined to the first chip by the superconducting bump bond, the second chip having a first quantum circuit element, in which the superconducting bump bond provides an electrical connection between the first circuit element and the first quantum circuit element.

A device includes a first chip having a first circuit element, a first interconnect pad in electrical contact with the first circuit element, and a barrier layer on the first interconnect pad, a superconducting bump bond on the barrier layer, and a second chip joined to the first chip by the superconducting bump bond, the second chip having a first quantum circuit element, in which the superconducting bump bond provides an electrical connection between the first circuit element and the first quantum circuit element.