To improve reliability of a semiconductor device. There are provided the semiconductor device and a method of manufacturing the same, the semiconductor including a pad electrode that is formed over a semiconductor substrate and includes a first conductive film and a second conductive film formed over the first conductive film, and a plating film that is formed over the second conductive film and used to be coupled to an external connection terminal (TR). The first conductive film and the second conductive film contains mainly aluminum. The crystal surface on the surface of the first conductive film is different from the crystal surface on the surface of the second conductive film.

To improve reliability of a semiconductor device. There are provided the semiconductor device and a method of manufacturing the same, the semiconductor including a pad electrode that is formed over a semiconductor substrate and includes a first conductive film and a second conductive film formed over the first conductive film, and a plating film that is formed over the second conductive film and used to be coupled to an external connection terminal (TR). The first conductive film and the second conductive film contains mainly aluminum. The crystal surface on the surface of the first conductive film is different from the crystal surface on the surface of the second conductive film.

A semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor device and a second semiconductor device are formed within a semiconductor wafer and a scribe region between the first semiconductor device and the second semiconductor device is patterned. A singulation process is then utilized within the scribe region to singulate the first semiconductor device from the second semiconductor device. The first semiconductor device and the second semiconductor device are then bonded to a second semiconductor substrate and thinned in order to remove extension regions from the first semiconductor device and the second semiconductor device.

An integrated circuit includes a substrate, a pad electrode disposed on the substrate, and a passivation layer disposed on the pad electrode and including an organic insulating material. The integrated circuit further includes a bump electrode disposed on the passivation layer and connected to the pad electrode through a contact hole. The passivation layer includes an insulating portion having a first thickness and covering an adjacent edge region of the pad electrode and the substrate, and a bump portion having a second thickness, that is greater than the first thickness, and covering a center portion of the pad electrode.

The present disclosure provides a display panel and a display apparatus. The display panel includes a driving back plate, a driving circuit, a first electrode layer, micro-LEDs, a second electrode layer, and a bonding layer. The first electrode layer on the driving circuit is provided with a first protruding structure, and the second electrode layer under the micro-LEDs is provided with a second protruding structure. The bonding layer is disposed between the first electrode layer and the second electrode layer to alleviate the problem of micro-LEDs falling off.

Implementations of a semiconductor package may include a die; a first pad and a second pad, the first pad and the second pad each including a first layer and a second layer where the second layer may be thicker than the first layer. At least a first conductor may be directly coupled to the second layer of the first pad; at least a second conductor may be directly coupled to the second layer of the second pad; and an organic material may cover at least the first side of the die. The at least first conductor and the at least second conductor extend through openings in the organic material where a spacing between the at least first conductor and the at least second conductor may be wider than a spacing between the second layer of the first pad and the second layer of the second pad.

A semiconductor package includes a first semiconductor component, a second semiconductor component, and a connecting element. The first semiconductor component includes a first substrate, and a first bonding pad disposed adjacent to a first surface of the first substrate, and at least one conductive via structure extending from a second surface of the first substrate to the first bonding pad. The second semiconductor component includes a second substrate, a redistribution layer disposed adjacent to a first surface of the second substrate, and a second bonding pad disposed on the redistribution layer. The connecting element is disposed between the first bonding pad and the second bonding pad.

A semiconductor package includes a first semiconductor component, a second semiconductor component, and a connecting element. The first semiconductor component includes a first substrate, and a first bonding pad disposed adjacent to a first surface of the first substrate, and at least one conductive via structure extending from a second surface of the first substrate to the first bonding pad. The second semiconductor component includes a second substrate, a redistribution layer disposed adjacent to a first surface of the second substrate, and a second bonding pad disposed on the redistribution layer. The connecting element is disposed between the first bonding pad and the second bonding pad.

Structure and method for reducing thermal-mechanical stresses generated for a semiconductor device are provided, which includes a tiled-stress-alleviating pad structure.

A semiconductor structure including an integrated circuit die and conductive bumps is provided. The integrated circuit die includes bump pads. The conductive bumps are disposed on the bump pads. Each of the conductive bumps includes a first pillar portion disposed on one of the bump pads and a second pillar portion disposed on the first pillar portion. The second pillar portion is electrically connected to one of the bump pads through the first pillar portion, wherein a first width of the first pillar portion is greater than a second width of the second pillar portion. A package structure including the above-mentioned semiconductor structure is also provided.