The present disclosure is directed to a die including a first contact with a first shape (e.g., a ring-shape contact) and second contact with a second shape different from the first shape (e.g., a cylindrical-shape contact). The first contact has an opening that extends through a central region of a surface of the first contact. A first solder portion is coupled to the surface of the first contact and the first solder portion has the first shape. A second solder portion is coupled to a surface of the second contact and the second solder portion has the second shape. The first solder portion and the second solder portion both have respective points furthest away from a substrate of the die. These respective points of the first solder portion and the second solder portion are co-planar with each other such that a standoff height of the die remains consistent when coupled to a PCB or an electronic component.

Embodiments of the present description relate to the field of fabricating microelectronic substrates. The microelectronic substrate may include a trace routing structure disposed between opposing glass layers. The trace routing structure may comprise one or more dielectric layers having conductive traces formed thereon and therethrough. Also disclosed are embodiments of a microelectronic package including a microelectronic device disposed proximate one glass layer of the microelectronic substrate and coupled with the microelectronic substrate by a plurality of interconnects.

Embodiments of the present description relate to the field of fabricating microelectronic substrates. The microelectronic substrate may include a trace routing structure disposed between opposing glass layers. The trace routing structure may comprise one or more dielectric layers having conductive traces formed thereon and therethrough. Also disclosed are embodiments of a microelectronic package including a microelectronic device disposed proximate one glass layer of the microelectronic substrate and coupled with the microelectronic substrate by a plurality of interconnects.

Provided is a die stack structure including a first die and a second die. The first die and the second die are bonded together through a hybrid bonding structure. A bonding insulating layer of the hybrid bonding structure extends to contact with one interconnect structure of the first die or the second die.

Provided is a die stack structure including a first die and a second die. The first die and the second die are bonded together through a hybrid bonding structure. A bonding insulating layer of the hybrid bonding structure extends to contact with one interconnect structure of the first die or the second die.

A semiconductor wafer has a plurality of semiconductor die with contact pads for electrical interconnect. An insulating layer is formed over the semiconductor wafer. A bump structure is formed over the contact pads. The bump structure has a buffer layer formed over the insulating layer and contact pad. A portion of the buffer layer is removed to expose the contact pad and an outer portion of the insulating layer. A UBM layer is formed over the buffer layer and contact pad. The UBM layer follows a contour of the buffer layer and contact pad. A ring-shaped conductive pillar is formed over the UBM layer using a patterned photoresist layer filled with electrically conductive material. A conductive barrier layer is formed over the ring-shaped conductive pillar. A bump is formed over the conductive barrier layer. The buffer layer reduces thermal and mechanical stress on the bump and contact pad.

A semiconductor wafer has a plurality of semiconductor die with contact pads for electrical interconnect. An insulating layer is formed over the semiconductor wafer. A bump structure is formed over the contact pads. The bump structure has a buffer layer formed over the insulating layer and contact pad. A portion of the buffer layer is removed to expose the contact pad and an outer portion of the insulating layer. A UBM layer is formed over the buffer layer and contact pad. The UBM layer follows a contour of the buffer layer and contact pad. A ring-shaped conductive pillar is formed over the UBM layer using a patterned photoresist layer filled with electrically conductive material. A conductive barrier layer is formed over the ring-shaped conductive pillar. A bump is formed over the conductive barrier layer. The buffer layer reduces thermal and mechanical stress on the bump and contact pad.

A method includes forming an electrical connector over a substrate of a wafer, and molding a polymer layer, with at least a portion of the electrical connector molded in the polymer layer. A first sawing step is performed to form a trench in the polymer layer. After the first sawing step, a second sawing step is performed to saw the wafer into a plurality of dies.

A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions.

A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions.