A semiconductor device includes a chip body; a passivation layer on the chip body; a lower dielectric layer on the passivation layer; a first re-distribution pad on the lower dielectric layer; an upper dielectric layer on the lower dielectric layer, the upper dielectric layer having a groove that exposes an upper surface of the first re-distribution pad; and a second re-distribution pad on the upper dielectric layer. An upper surface of the second re-distribution pad is positioned at a higher level than the upper surface of the first re-distribution pad.

An electronic device is provided. The electronic device includes a display panel, a first connection member on which a display driver integrated circuit (DDIC) configured to control the display panel is disposed, a first contact point part disposed on the first connection member, a second contact point part spaced apart from the first contact point part in a second direction perpendicular to the first direction and disposed on the first contact point part, a second connection member disposed adjacent to the first connection member, a third contact point part arranged in the first direction and is disposed on the first layer of the second connection member to be connected to the first contact point part, and a fourth contact point part arranged in the first direction and is arranged on the second layer of the second connection member to be connected to the second contact point part.

A display module is disclosed. The display module includes a pixel that includes: first to third self-luminescence elements that are configured to emit light of an ultraviolet wavelength range; first to third color conversion layers respectively corresponding to light emitting surfaces of the first to third self-luminescence elements; a first color filter and a second color filter respectively corresponding to the first color conversion layer and the second color conversion layer; a transparent resin layer corresponding to the third color conversion layer and disposed on a same plane as a plane at which the first color filter and the second color filter are positioned; a transparent cover layer that covers the first color filter, the second color filter, and the transparent resin layer; and an ultraviolet (UV) cutoff filter that covers the transparent cover layer.

Provided is a semiconductor device, an imaging device, and a manufacturing apparatus, capable of providing a semiconductor substrate maintaining and improving insulating performance. A through hole that penetrates the semiconductor substrate, an electrode at the center of the through hole, and a space around the electrode are included. The through hole also penetrates an insulating film formed on the semiconductor substrate. A barrier metal is further included around the electrode. An insulating film is further included in the semiconductor substrate and the space. The semiconductor device has a multilayer structure, and the electrode connects wirings formed in different layers to each other.

A cryogenic under bump metallization (UBM) stack includes an adhesion and barrier layer and a conductive pillar on the adhesion and barrier layer. The conductive pillar functions as a solder wetting layer of the UBM stack and has a thickness. An indium superconducting solder bump is on the conductive pillar. The thickness of the conductive pillar is sufficient to prevent intermetallic regions, which form in the conductive pillar at room temperature due to interdiffusion, from extending through the entire thickness of the conductive pillar to maintain the structural integrity of the UBM stack. The indium (In) solder bump may be formed through electroplating, with the conductive pillar being copper (Cu) and the adhesion and barrier layer being titanium tungsten (TiW) and a thin seed layer of copper (Cu), or a layer of titanium (Ti). The UBM stack eliminates the need for magnetic materials such as nickel (Ni) in the stack, making the stack suitable for cryogenic applications.

A light emitting display device includes a pixel circuit unit, a data distribution unit, a plurality of signal generating units, a unit light emitting diode, and a dummy opening. The pixel circuit unit is configured to generate an output current. The data distribution unit is configured to apply a data voltage to the pixel circuit unit through a data line. The plurality of signal generating units are respectively configured to apply a scan signal and a light emission control signal to the pixel circuit unit through a plurality of signal lines. The unit light emitting diode is configured to receive the output current of the pixel circuit unit and is attached to the pixel circuit unit. The dummy opening is formed in the region where the pixel circuit unit, the data distribution unit, and a plurality of signal generating units are not positioned.

A display panel includes a substrate having a first surface and a second surface opposite to the first surface, a first pixel circuit arranged on the first surface of the substrate, a first through electrode passing through the substrate and being connected to the first pixel circuit, a first pad electrode arranged on the second surface of the substrate and being connected to the first through electrode, a common electrode arranged on the first surface of the substrate and arranged on the first pixel circuit, a second through electrode passing through the substrate and being connected to the common electrode, and a second pad electrode arranged on the second surface of the substrate and being connected to the second through electrode.

A method for fabricating a semiconductor structure is provided. The method includes: providing a semiconductor chip comprising an active surface; forming a conductive bump over the active surface of the semiconductor chip; and coupling the conductive bump to a substrate. The conductive bump includes a plurality of bump segments including a first group of bump segments and a second group of bump segments. Each bump segment has a same segment thickness in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment has a volume defined by a multiplication of the same segment thickness with an average cross-sectional area of the bump segment in a plane parallel to the active surface of the semiconductor chip. A ratio of a total volume of the first group of bump segments to a total volume of the second group of bump segments is between 0.03 and 0.8.

The present technology relates to an imaging element and a semiconductor chip that can implement a low height of the imaging element. A first chip including a photo diode; and a second chip including a circuit processing a signal transmitted from the photo diode are stacked, and a charging film is disposed on a second face of the second chip that is on a side opposite to a first face on which the first chip is stacked. The charging film is disposed in a part or the entirety of the second face. For example, the present technology can be applied to an imaging element, in which a plurality of chips are configured to be stacked, that can implement a low height and a small size.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.