Electrode pads disposed on a first surface of a semiconductor element include a first pad located close to a corner and a second pad located apart from the corner compared with the first pad. A first wire connected to the first pad has a smaller Young's modulus than a second wire connected to the second pad. A thickness of an intermetallic compound layer formed by the first wire and the first pad is larger than a thickness of an intermetallic compound layer formed by the second wire and the second pad.

A chip structure includes a chip substrate and a plurality of bumps. The plurality of bumps are disposed on a surface of the chip substrate and function as an interface for electrical connection between the chip substrate and an external connecting portion. The plurality of bumps are spaced apart from each other, and each of the plurality of bumps includes a rhombic configuration.

An integrated circuit chip includes a substrate on which a standard cell is disposed. The integrated circuit chip includes a plurality of power bumps including a plurality of first power bumps and a plurality of second power bumps, the plurality of power bumps. disposed to have a staggered arrangement in a central region of one surface of the integrated circuit chip, and connected to provide power to the standard cell; a first metal wiring disposed below the plurality of first power bumps and electrically connected to the plurality of first power bumps, at least a part of the first metal wiring overlapping the plurality of first power bumps from a plan view; and a second metal wiring horizontally separated from the first metal wiring, disposed below the plurality of second power bumps, and electrically connected to the plurality of second power bumps, at least a part of the second metal wiring overlapping the plurality of second power bumps from the plan view. The plurality of first power bumps are disposed along a first line extending in a first direction parallel to a first diagonal direction of the integrated circuit chip, and along a second line extending in a second direction parallel to a second diagonal direction of the integrated circuit chip different from the first diagonal direction, the first diagonal direction and second diagonal direction being diagonal with respect to edges of the integrated circuit chip, and the plurality of second power bumps are disposed along a third line spaced apart from the first line and extending in the first direction, and along a fourth line spaced apart from the second line and extending in the second direction.

A memory package structure includes a substrate, a memory chip and a plurality of resistors. The substrate has a plurality of pins. The pins include a plurality of data pins used to transfer data signal. The memory chip is located on the substrate. A plurality of bonding pads is located on the memory chip. The bonding pads include a plurality of data pads used to receive the data signal from data pins or transfer the data signal from the memory chip. The resistors is located on the substrate. Each data pad is connected to a corresponding one of the data pins through a corresponding one of the resistors.

Embodiments disclosed herein include electronic package and methods of forming such packages. In an embodiment, an electronic package comprises a mold layer and a first die embedded in the mold layer. In an embodiment, the first die comprises first pads at a first pitch and second pads at a second pitch. In an embodiment, the electronic package further comprises a second die embedded in the mold layer, where the second die comprises third pads at the first pitch and fourth pads at the second pitch. In an embodiment, a bridge die is embedded in the mold layer, and the bridge die electrically couples the second pads to the fourth pads.

A semiconductor package including: a base layer; a first chip stack and a second chip stack sequentially stacked over the base layer, each of the first and second chip stacks including a plurality of semiconductor chips which are offset stacked to expose chip pads at one side edge thereof, and the chip pads including stack identification pads for identifying the first chip stack and the second chip stack and chip identification pads for identifying the plurality of semiconductor chips in each of the first and second chip stacks; a first inter-chip wire and a second inter-chip wire connecting power-applied ones of the chip identification pads of the plurality of semiconductor chips of the first and second chip stacks; a first stack wire and second stack wire connecting the chip identification pad of a lowermost semiconductor chip of the first and second chip stacks to the base layer.

A memory package includes a package substrate including power wiring and ground wiring. The memory package also includes a memory controller disposed over an upper surface of the package substrate and electrically connected to the power wiring and the ground wiring. The memory package further includes a memory chip disposed over the memory controller and electrically connected to the power wiring and the ground wiring. The memory package additionally includes a band pass filter disposed at one side of the memory controller over the upper surface of the package substrate and including an inductor and a capacitor which are connected in series. The inductor and the capacitor connected in series are electrically connected between the power wiring and the ground wiring.

A semiconductor die can include an alternating stack of insulating layers and electrically conductive layers located on a substrate, memory stack structures extending through the alternating stack, drain regions located at a first end of a respective one of the vertical semiconductor channels of a memory stack structure, and bit lines extending over the drain regions and electrically connected to a respective subset of the drain regions. At least of a subset of the bit lines includes bump-containing bit lines. Each of the bump-containing bit lines includes a line portion and a bump portion that protrudes upward from a top surface of the line portion by a bump height. Bit line contact via structures overlie the bit lines and contact a bump portion of a respective one of the bump-containing bit lines.

A semiconductor device including a first die and a second die bonded to one another. The first die includes a first passivation layer over a substrate, and first bond pads in the first passivation layer. The second die includes a second passivation layer, which may be bonded to the first passivation layer, and second bond pads in the second passivation layer, which may be bonded to the first bond pads. The second bond pads include inner bond pads and outer bond pads. The outer bond pads may have a greater diameter than the inner bond pads as well as the first bond pads.

A universal interposer for an integrated circuit (IC) device has a body having a first surface and a second surface opposite the first surface. A first region is formed on a first side of the body along a first edge. The first region has first slots, each having an identical first bond pad layout. A second region is formed on the first side along a second edge, opposite the first edge. The second region has second slots having an identical second bond pad layout. A third region having third slots is formed on the first side between the first and second regions, each slot having an identical third bond pad layout. A pad density of the third bond pad layout is greater than the first bond pad layout. One of the third slots is coupled to contact pads disposed in a region not directly below any of the second slots.